Patents by Inventor XIAOMI YAN

XIAOMI YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Terahertz kinetic inductance bolometer, preparation method thereof and terahertz detection system
    Patent number: 12540858
    Abstract: Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detec
    Type: Grant
    Filed: October 24, 2023
    Date of Patent: February 3, 2026
    Assignee: ZHEJIANG LAB
    Inventors: Xiaohang Zhang, Lihui Yang, Yanru Song, Shiling Yu, Xiaomi Yan, Hongli Zhu, Yue Hong, Tangjie Mu, Zhiwei Chen, Ran Duan, Zhifeng Zhao, Yi Feng, Di Li
  • TERAHERTZ KINETIC INDUCTANCE BOLOMETER, PREPARATION METHOD THEREOF AND TERAHERTZ DETECTION SYSTEM
    Publication number: 20240426671
    Abstract: Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detec
    Type: Application
    Filed: October 24, 2023
    Publication date: December 26, 2024
    Inventors: XIAOHANG ZHANG, LIHUI YANG, YANRU SONG, SHILING YU, XIAOMI YAN, HONGLI ZHU, YUE HONG, TANGJIE MU, ZHIWEI CHEN, RAN DUAN, ZHIFENG ZHAO, YI FENG, DI LI