Abstract: The disclosure provides an HfN—Ge—Sb—Te phase change material and low power consumption phase change memory, belonging to the field of micro-nano electronics. Its general formula is (HfN)x(Ge-Sb-Te)1-x, where x is the percentage of HfN molecules in the total number of molecules. The lattice mismatch between the Ge—Sb—Te based alloy and HfN is greater than 20%, to inhibit the crystalline degree of the Ge—Sb—Te phase change memory material.

Abstract: A generalizable neural radiation field reconstruction method based on multi-modal information fusion, including: Step 1, constructing photometric features and geometric features based on unstructured multi-views, and constructing a multi-modal neural encoder by performing incrementally complementary fusion on the photometric features and the geometric features; Step 2, converting the multi-modal neural encoder and raw RGB pixel bodies of the unstructured multi-views into a volume density and radiation brightness; Step 3, sampling light on the basis of the constructed multi-modal neural encoder, aggregating context features of the sampled light based on a transformer network to obtain light context features; and Step 4, decoding, using the light context features, the volume density and the radiation brightness; rendering, based on the decoded volume density and the radiation brightness, to generate a free-view RGB-D image; and guiding dense reconstruction of a low-texture scene by combining photometric supervi

Abstract: A homogeneous optoelectronic reservoir computing system based on a nitrogen-doped Ge—Sb—Te material includes an optoelectronic reservoir layer and a readout layer connected to each other; the optoelectronic reservoir layer includes multiple optical synaptic devices based on nitrogen-doped Ge—Sb—Te material, and the optical synaptic devices realize perception and nonlinear response of image light signals based on the photoconductive effect of a single light pulse and the paired-pulse facilitation effect under a double light pulse; the readout layer includes multiple electrical synaptic devices based on the nitrogen-doped Ge—Sb—Te material, and the electrical synaptic devices realize linear response and image recognition of output signals of the optoelectronic reservoir layer based on linearity, symmetry long-term potentiation function, and long-term depression function. In the system of the disclosure, both the reservoir layer and the readout layer use devices based on the same material.

Abstract: Disclosed is a temperature sensing and computing device and array based on TaOx electronic memristor, including a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top; a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the function layer is TaOx material; the first metal layer is grounded, and positive and negative voltages are applied to the second metal layer; in which an output current when the negative voltage is applied to the second metal layer is greater than an output current when the positive voltage of the same magnitude is applied to the second metal layer, and there is a self-rectifying effect; when the voltage of the same magnitude is applied to the second metal layer, the output current increases as a temperature increases.

Abstract: Disclosed is a temperature sensing and computing device and array based on TaOx electronic memristor, including a first metal layer, a function layer, and a second metal layer sequentially stacked from bottom to top; a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the function layer is TaOx material; the first metal layer is grounded, and positive and negative voltages are applied to the second metal layer; in which an output current when the negative voltage is applied to the second metal layer is greater than an output current when the positive voltage of the same magnitude is applied to the second metal layer, and there is a self-rectifying effect; when the voltage of the same magnitude is applied to the second metal layer, the output current increases as a temperature increases.

Abstract: A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers (7) and second phase-change layers (8) that are alternately stacked to form a periodic structure; during crystallization, the first phase-change layer (7) has a conventional positive density change, and the second phase-change layer (8) has an abnormal negative density change, therefore, the abnormal density reduction and volume increase of the second phase-change layer (8) during crystallization can be used to offset the volume reduction of the first phase-change layer (7) during crystallization.

Abstract: The disclosure discloses a reconfigurable heterojunction memristor, a control method, a fabrication method, and an application thereof. The functional layer designed by the disclosure comprises a PN heterojunction of n-AgO and p-Ag2O or a PN heterojunction of n-CuO2 and p-CuO. In the analog type, multiple resistance state performance is exhibited based on charge trapping and releasing, and self-rectification characteristics are exhibited, without the need for a selector, which facilitates large-scale integration; in the digital type, the presence of Ag/Cu ions in the layer helps to form Ag/Cu conductive filaments, the switching threshold voltage is small, and the advantages of fast switching speed and low switching power consumption are provided. The disclosure realizes a PN heterojunction device of an N-type oxide layer and a P-type oxide layer through electrochemical principles, and is analog type-digital type reconfigurable between a self-rectifying analog type device and a digital type device.

Abstract: The present invention provides a personalized registration method for a template library of anatomical morphology and mechanical properties of materials of bone CT images. In the method, a large number of bone CT images of healthy persons are used to build a statistical model capable of containing anatomical morphology and mechanical properties of materials of bones, the parameterized description of bones of a patient is realized by a personalized registration method for the statistical model and bone CT images, a prosthesis template library is built by using images of the patient and registration parameters, and the template library is matched with the CT images of the patient by the personalized registration method to retrieve template images and prosthesis models similar to the bone conditions of the patient from the template library as the initial reference template for design of personalized prosthesis implants.

Abstract: A Y-branch type phase-change all-optical Boolean logic device comprises a waveguide of a Y-branch structure and phase change function units covered over the waveguide. In the logic implementation method, a light pulse having a large power is employed to perform a write operation on the phase change function unit, so that the phase change function unit is heated to generate a crystallization or amorphization phase change, thereby causing a difference in optical properties under two states; the state of the phase change function unit is read by employing a light pulse having a small power, and the state of its phase change material is not changed. By defining input logic signals respectively and defining three operation steps, an operation mode reconfigurable logic can be implemented, and all 16 binary Boolean logic calculations are implemented in a simple structure by means of step-by-step operation.

Abstract: A Y-branch type phase-change all-optical Boolean logic device comprises a waveguide of a Y-branch structure and phase change function units covered over the waveguide. In the logic implementation method, a light pulse having a large power is employed to perform a write operation on the phase change function unit, so that the phase change function unit is heated to generate a crystallization or amorphization phase change, thereby causing a difference in optical properties under two states; the state of the phase change function unit is read by employing a light pulse having a small power, and the state of its phase change material is not changed. By defining input logic signals respectively and defining three operation steps, an operation mode reconfigurable logic can be implemented, and all 16 binary Boolean logic calculations are implemented in a simple structure by means of step-by-step operation.

Abstract: The disclosure provides a straight waveguide phase change all-photonic Boolean logic device and a full binary logic implementation method thereof, including a ridge- shape straight waveguide structure, two phase change functional units near the two ends and a Bragg grating between two phase change functional units. The phase change functional units and Bragg grating are situated on the ridge of the waveguide. The write and read optic pulses have different wavelengths. The Bragg grating are designed to reflect the write optical pulse and transmit the read pulse, so that write pulses input from the two ends only act on the phase change functional unit closest to that end, and read pulse can go through the whole device from input end to output end. In terms of the logic implementation method, with three-step write operation, 16 full Boolean logic functions can be implemented in this device.

Abstract: A Cu-doped Sb2Te3 system phase change material, a phase change memory, and a preparation method thereof belonging to the technical field of micro-nano electronics are provided. A Sb—Te system phase change material is doped with Cu element to form Cu3Te2 bonds with both tetrahedral and octahedral structures in the case of local enrichment of Cu. The strongly bonded tetrahedral structure improves the amorphous stability and data retention capability of the Sb—Te system phase change material, and the octahedral structure of the crystal configuration improves the crystallization speed of the Sb—Te system phase change material. A phase change memory including the phase change material and a preparation method of the phase change material are also provided. Through the phase change material provided by the invention, both the speed and amorphous stability of the device are improved, and the comprehensive performance of the phase change memory is also enhanced.

Abstract: A phase change memory device based on a nano current channel is provided. A nano current channel layer structure is adopted and configured to limit the current channel. As such, when flowing through the layer, the current enters the phase change layer from nano crystal grains with high electrical conductivity, and the current is thereby confined in the nano current channels. By using the nano-scale conductive channels, the contact area between the phase change layer and the electrode layer is significantly decreased, the current density at local contact channel is significantly increased, and heat generation efficiency of the current in the phase change layer is improved. Moreover, an electrically insulating and heat-insulating material with low electrical conductivity and low thermal conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, and Joule heat utilization efficiency of the phase change layer is thereby improved.

Abstract: A Cu-doped Sb2Te3 system phase change material, a phase change memory, and a preparation method thereof belonging to the technical field of micro-nano electronics are provided. A Sb—Te system phase change material is doped with Cu element to form Cu3Te2 bonds with both tetrahedral and octahedral structures in the case of local enrichment of Cu. The strongly bonded tetrahedral structure improves the amorphous stability and data retention capability of the Sb—Te system phase change material, and the octahedral structure of the crystal configuration improves the crystallization speed of the Sb—Te system phase change material. A phase change memory including the phase change material and a preparation method of the phase change material are also provided. Through the phase change material provided by the invention, both the speed and amorphous stability of the device are improved, and the comprehensive performance of the phase change memory is also enhanced.

Abstract: The disclosure provides a straight waveguide phase change all-photonic Boolean logic device and a full binary logic implementation method thereof, including a straight waveguide structure, a phase change functional unit covered on top of a waveguide and a protective layer thereof, and a waveguide Bragg grating structure. In terms of the logic implementation method, optical pulses are respectively input from two ends of the device to modulate the state of the phase change functional unit. The parameters of the waveguide Bragg grating structure are set to reflect the wavelength of the pump optical pulse, so that write pulses input from the two ends only act on the phase change functional unit closest to that end. A probe optical pulse with a specific wavelength is selected, and the probe light under the wavelength is less reflected by the waveguide Bragg grating and does not affect the reading of the state of the device.

Abstract: The present invention provides a personalized registration method for a template library of anatomical morphology and mechanical properties of materials of bone CT images. In the method, a large number of bone CT images of healthy persons are used to build a statistical model capable of containing anatomical morphology and mechanical properties of materials of bones, the parameterized description of bones of a patient is realized by a personalized registration method for the statistical model and bone CT images, a prosthesis template library is built by using images of the patient and registration parameters, and the template library is matched with the CT images of the patient by the personalized registration method to retrieve template images and prosthesis models similar to the bone conditions of the patient from the template library as the initial reference template for design of personalized prosthesis implants.

Abstract: A phase change memory device based on a nano current channel is provided. A nano current channel layer structure is adopted and configured to limit the current channel. As such, when flowing through the layer, the current enters the phase change layer from nano crystal grains with high electrical conductivity, and the current is thereby confined in the nano current channels. By using the nano-scale conductive channels, the contact area between the phase change layer and the electrode layer is significantly decreased, the current density at local contact channel is significantly increased, and heat generation efficiency of the current in the phase change layer is improved. Moreover, an electrically insulating and heat-insulating material with low electrical conductivity and low thermal conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, and Joule heat utilization efficiency of the phase change layer is thereby improved.

Abstract: A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers (7) and second phase-change layers (8) that are alternately stacked to form a periodic structure; during crystallization, the first phase-change layer (7) has a conventional positive density change, and the second phase-change layer (8) has an abnormal negative density change, therefore, the abnormal density reduction and volume increase of the second phase-change layer (8) during crystallization can be used to offset the volume reduction of the first phase-change layer (7) during crystallization.

Abstract: The present invention provides non-planar cutting tooth and a diamond drill bit. The non-planar cutting tooth and the diamond drill bit have great ability of impact resistance and balling resistance. According to the features of drilled formation, cutting teeth are arranged on the drill bit with different mode, which can improve the mechanical speed and footage of the drill bit.

Abstract: The present invention provides non-planar cutting tooth and a diamond drill bit. The non-planar cutting tooth and the diamond drill bit have great ability of impact resistance and balling resistance. According to the features of drilled formation, cutting teeth are arranged on the drill bit with different mode, which can improve the mechanical speed and footage of the drill bit.