Patents by Inventor Xiao-min Li

Xiao-min Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making ferroelectric thin-film, sensor and the ferroelectric thin-film element
    Patent number: 6667182
    Abstract: A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buffer layer, a ferroelectric thin film orientationally grown or epitaxially grown on the lower electrode, and an upper electrode formed on the ferroelectric thin film. A portion of the thin-film laminate may be supported by air.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: December 23, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Xiao-min Li, Katsuhiko Tanaka
  • Ferroelectric thin film device and method of producing the same
    Patent number: 6613585
    Abstract: A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
    Type: Grant
    Filed: February 1, 2001
    Date of Patent: September 2, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Sakurai, Xiao-min Li, Kosuke Shiratsuyu
  • Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same
    Patent number: 6465825
    Abstract: A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh epitaxially grown on said MgO buffer layer.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: October 15, 2002
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Xiao-min Li
  • Ferroelectric thin film device and method of producing the same
    Publication number: 20010055820
    Abstract: A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
    Type: Application
    Filed: February 1, 2001
    Publication date: December 27, 2001
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Sakurai, Xiao-Min Li, Kosuke Shiratsuyu
  • Ferroelectric thin-film element, sensor, and method for making the ferroelectric thin-film element
    Publication number: 20010042877
    Abstract: A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buffer layer, a ferroelectric thin film orientationally grown or epitaxially grown on the lower electrode, and an upper electrode formed on the ferroelectric thin film. A portion of the thin-film laminate may be supported by air.
    Type: Application
    Filed: March 12, 2001
    Publication date: November 22, 2001
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Xiao-min Li, Katsuhiko Tanaka
  • Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same
    Publication number: 20010006254
    Abstract: A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh epitaxially grown on said MgO buffer layer.
    Type: Application
    Filed: December 21, 2000
    Publication date: July 5, 2001
    Applicant: Murata manufacturing Co. , Ltd.,
    Inventor: Xiao-min Li
  • Ferroelectric thin film device and method of producing the same
    Patent number: 6204525
    Abstract: A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
    Type: Grant
    Filed: September 18, 1998
    Date of Patent: March 20, 2001
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Sakurai, Xiao-min Li, Kosuke Shiratsuyu
  • Ferroelectric thin film device and method of producing the same
    Patent number: 6198120
    Abstract: A ferroelectric thin film device comprises: a Si substrate; a TiN thin film epitaxially grown on the Si substrate in which Ti is partially substituted by Al; a metal thin film epitaxially grown on the TiN thin film; and a ferroelectric thin film grown and oriented on the metal thin film and composed of an oxide having a perovskite structure. The amount of Al substituted at Ti sites in the TiN thin film is about 1 to 30% in terms of Al atoms, and the oxygen content of the TiN thin film is about 5% or less in terms of oxygen atoms.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: March 6, 2001
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Sakurai, Xiao-min Li, Kosuke Shiratsuyu
  • Parallel plate plasma CVD apparatus
    Patent number: 6050217
    Abstract: A parallel plate plasma CVD apparatus comprises a radio-frequency generator; a reaction chamber; a bottom electrode provided in the reaction chamber and grounded; a top electrode provided opposite to the bottom electrode in the reaction chamber and connected to the radio-frequency generator; a mesh electrode provided between the bottom electrode and the top electrode in the reaction chamber; and one of a resistor and a capacitor electrically connected between the bottom electrode and the mesh electrode.
    Type: Grant
    Filed: August 26, 1998
    Date of Patent: April 18, 2000
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Xiao-min Li