Abstract: The present disclosure relates to a multi-mode sensor based on wafer-level packaging and its manufacturing method. The sensor comprises a base for 3D packaging, a multi-mode sensor body, a cap layer, and multiple packaging structures. The base consists of a first substrate, a dielectric layer, a first insulating layer, and multiple through silicon vias (TSVs). The cap layer comprises a second substrate and a bonding ring, where the first surface of the second substrate is provided with a cavity for housing at least part of the multi-mode sensor body. This disclosure has the advantages of high integration, high performance, low cost, miniaturization, high reliability, process feasibility and compatibility, as well as high wafer-level uniformity, making it suitable for a wide range of applications.

Abstract: The present disclosure relates to a non-destructive in-situ measurement device and method based on Raman analysis. The device comprises: a laser light source that emits a laser beam; a focusing component that focuses the laser beam above a movable sample stage, with the focal plane of the focusing component positioned at an initial position. During measurement, the focal plane is controlled to move from the initial position to the surface, side, or bottom of the structure under test. The movable sample stage holds the sample to be measured and can move in a plane perpendicular and/or parallel to the optical axis. The axis of the structure under test is parallel to the optical axis and located within the laser beam's focal region. A detection module collects specific Raman scattering signals returned from the sample under test, and the structure's planar and three-dimensional parameters are determined based on the collected results.