Patents by Inventor Xiaonan Li

Xiaonan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200096770
    Abstract: A lens module in a head-mounted device may include a fluid-filled chamber, a semi-rigid lens element that at least partially defines the fluid-filled chamber, and at least one actuator configured to selectively bend the semi-rigid lens element. The semi-rigid lens element may become rigid along a first axis when the lens element is curved along a second axis perpendicular to the first axis. Six actuators that are evenly distributed around the periphery of the semi-rigid lens element may be used to control the curvature of the semi-rigid lens element. The semi-rigid lens element may initially be planar or non-planar. For example, the semi-rigid lens element may initially have a spherically convex surface and a spherically concave surface. A tunable spherical lens may be incorporated into the lens module to offset a parasitic spherical lens power from the semi-rigid lens element.
    Type: Application
    Filed: July 23, 2019
    Publication date: March 26, 2020
    Inventors: James E. Pedder, Igor Stamenov, Cheng Chen, Enkhamgalan Dorjgotov, Graham B. Myhre, Victoria C. Chan, Xiaonan Wen, Peng Lv, Yuan Li, Yu Horie, Siddharth S. Hazra
  • Publication number: 20200059101
    Abstract: The present disclosure provides a method, an apparatus, and a medium for calculating capacities of a plurality of photovoltaic power stations. The method includes: receiving a plurality of historical weather data sets from the plurality of weather monitoring stations; determining a scene year based on the plurality of historical weather data sets; receiving an actual generating capacity of each photovoltaic power station predicted by a power system dispatch center; extracting weather data of each photovoltaic power station in the scene year from the corresponding historical weather data set; obtaining an available generating capacity of each photovoltaic power station in the scene year based on the weather data; and determining a capacity of each photovoltaic power station in the scene year according to the actual generating capacity and the available generating capacity of each photovoltaic power station.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 20, 2020
    Inventors: Jian ZHANG, Xin TIAN, Xueliang LI, Ning ZHANG, Jian WU, Long ZHAO, Yan WANG, Zhijie ZHENG, Hong MOU, Yuan WANG, Xiaoming LIU, Jie ZHANG, Xiaonan GAO, Jianing ZHANG, Dong LIU, Ying MOU, Shanjie JIA, Bo LI, Yi ZHU, Xiaohai GAO, Xin WEI, Jia WEI
  • Publication number: 20190156895
    Abstract: A semiconductor device for a one-time programmable (OTP) memory according to some examples of the disclosure includes a gate, a dielectric region below the gate, a source terminal below the dielectric region and offset to one side, a drain terminal below the dielectric region and offset to an opposite side from the source terminal, a drain side charge trap in the dielectric region capable of programming the semiconductor device, and a source side charge trap in the dielectric region opposite the drain side charge trap and capable of programming the semiconductor device.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Xia LI, Xiao LU, Xiaonan CHEN, Zhongze WANG
  • Patent number: 10290352
    Abstract: A semiconductor device for a one-time programmable (OTP) memory according to some examples of the disclosure includes a gate, a dielectric region below the gate, a source terminal below the dielectric region and offset to one side, a drain terminal below the dielectric region and offset to an opposite side from the source terminal, a drain side charge trap in the dielectric region capable of programming the semiconductor device, and a source side charge trap in the dielectric region opposite the drain side charge trap and capable of programming the semiconductor device.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: May 14, 2019
    Assignee: QUALCOMM Incorporated
    Inventors: Xia Li, Xiao Lu, Xiaonan Chen, Zhongze Wang
  • Publication number: 20180265444
    Abstract: Small molecule stimulators of steroid receptor coactivator (SRC) family proteins are provided, as well as methods for their use in treating or preventing cancer. Also provided are methods for stimulating SRC family proteins in a cell.
    Type: Application
    Filed: December 29, 2015
    Publication date: September 20, 2018
    Applicant: BAYLOR COLLEGE OF MEDICINE
    Inventors: David Michael Lonard, Lei Wang, Bert W. O'Malley, Jianming Xu, Yongcheng Song, Xiaonan Li, Timothy Gerald Palzkill
  • Patent number: 9856028
    Abstract: An integrated pylon structure for a propulsion system is suitable for one end to be connected to an aircraft wing and the other end to be connected to an aircraft engine. The pylon structure includes a pylon box section (110) formed from an upper and a lower bean, a frame (100) and a side wall panel. The pylon structure has a thrust reverser hood connection structure, provided on the side wall and connected with a nacelle thrust reverser hood having a front fixed hood (301) and a rear movable hood (302). A guide rail allows the rear movable hood to slide and open relative to the pylon box section. The engine thrust reverser hood is directly connected to the side wall of the pylon box section and a guide rail on the side wall guides the opening of the thrust reverser hood.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: January 2, 2018
    Assignees: Commercial Aircraft Corporation of China, LTD, COMMERCIAL AIRCRAFT CORPORATION OF CHINA, LTD SHANGHAI AIRCRAFT DESIGN AND RESEARCH INSTITUTE
    Inventors: Guanghui Wu, Kecen Han, Liangdao Zhou, Qifeng Yu, Guozheng Lin, Hongjie Zhang, Shibiao Zhang, Haojie Weng, Haisha Guo, Pengfei Zhang, Xiaonan Li, Shiwei Ma, Yinyin Hu, Sen Peng, Honggang Tang, Mingpeng Yan
  • Publication number: 20150122943
    Abstract: An integrated pylon structure for a propulsion system is suitable for one end to be connected to an aircraft wing and the other end to be connected to an aircraft engine. The pylon structure includes a pylon box section (110) formed from an upper and a lower bean, a frame (100) and a side wall panel. The pylon structure has a thrust reverser hood connection structure, provided on the side wall and connected with a nacelle thrust reverser hood having a front fixed hood (301) and a rear movable hood (302). A guide rail allows the rear movable hood to slide and open relative to the pylon box section. The engine thrust reverser hood is directly connected to the side wall of the pylon box section and a guide rail on the side wall guides the opening of the thrust reverser hood.
    Type: Application
    Filed: December 12, 2013
    Publication date: May 7, 2015
    Inventors: Guanghui Wu, Kecen Han, Liangdao Zhou, Qifeng Yu, Guozheng Lin, Hongjie Zhang, Shibiao Zhang, Haojie Weng, Haisha Guo, Pengfei Zhang, Xiaonan Li, Shiwei Ma, Yinyin Hu, Sen Peng, Honggang Tang, Mingpeng Yan
  • Patent number: 8568828
    Abstract: A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1×1020 cm?3 and 2×1020 cm?3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm2V?1 s?1 and 60 cm2V?1 s?1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: October 29, 2013
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Xiaonan Li, Timothy A. Gessert
  • Patent number: 8425978
    Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: April 23, 2013
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Tim Gessert, Xiaonan Li, Teresa M. Barnes, Robert Torres, Jr., Carrie L. Wyse
  • Publication number: 20120107491
    Abstract: Thin films containing a transparent conducting oxide and a high permittivity material are disclosed. Exemplary thin films may exhibit increased transmission in the visible-to-near infrared (vis-NIR) spectrum without a decrease in electrical conductivity compared to the thin film without the high permittivity material. Methods for making thin films having enhanced optical properties without substantially decreased electrical quality are also disclosed.
    Type: Application
    Filed: January 5, 2012
    Publication date: May 3, 2012
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
    Inventors: Xiaonan Li, James Burst, Timothy A. Gessert
  • Publication number: 20120097222
    Abstract: A method of producing thin-film transparent conducting oxide (TCO) materials and devices that incorporate the transparent conducting oxide materials are disclosed. The method described is for coating glass, polymers, foils, or electronic devices with a TCO having improved characteristics.
    Type: Application
    Filed: October 26, 2011
    Publication date: April 26, 2012
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
    Inventors: TIMOTHY A. GESSERT, Xiaonan Li, Teresa Barnes, Carrie L. Wyse
  • Publication number: 20110197958
    Abstract: A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1×1020 cm?3 and 2×1020 cm?3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm2V?1 s?1 and 60 cm2V?1 s?1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 18, 2011
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
    Inventors: XIAONAN LI, Timothy A. Gessert
  • Publication number: 20110070371
    Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 24, 2011
    Applicants: Matheson Tri-Gas, Inc., Alliance for Sustainable Energy
    Inventors: Tim Gessert, Xiaonan Li, Teresa M. Barnes, Robert Torres, JR., Carrie L. Wyse
  • Patent number: 7517784
    Abstract: A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: April 14, 2009
    Assignee: Alliance For Sustainable Energy, LLC
    Inventors: Xiaonan Li, Yanfa Yan, Timothy J. Coutts, Timothy A. Gessert, Clay M. Dehart
  • Publication number: 20080118777
    Abstract: A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
    Type: Application
    Filed: April 2, 2002
    Publication date: May 22, 2008
    Applicant: MIDWEST RESEARCH INSTITUTE
    Inventors: Xiaonan Li, Yanfa Yan, Timothy J. Coutts, Timothy A. Gessert, Clay M. Dehart
  • Patent number: 5712187
    Abstract: A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications.
    Type: Grant
    Filed: November 9, 1995
    Date of Patent: January 27, 1998
    Assignee: Midwest Research Institute
    Inventors: Xiaonan Li, Peter Sheldon