Abstract: An electronic module includes an interconnect module having a plurality of metal layers separated by a plurality of dielectric layers in a stacked structure with electronic components mounted on one surface of the module. The electronic components are selectively interconnected by drilling via holes completely through all dielectric layers with a conductive material such as solder in each via contacting metal layers to be interconnected and each metal layer which is not connected by a via having a metal pattern devoid of metal at the via location. For via connecting non-ground layers, there will be a patch of solder mask on the backside ground layer to electrically prevent this via from inadvertently connecting to ground.

Abstract: An electronic module includes an interconnect module having a plurality of metal layers separated by a plurality of dielectric layers in a stacked structure with electronic components mounted on one surface of the module. The electronic components are selectively interconnected by drilling via holes completely through all dielectric layers with a conductive material such as solder in each via contacting metal layers to be interconnected and each metal layer which is not connected by a via having a metal pattern devoid of metal at the via location. For via connecting non-ground layers, there will be a patch of solder mask on the backside ground layer to electrically prevent this via from inadvertently connecting to ground.

Abstract: A hybrid microwave and millimeter wave integrated circuit (MMIC) RF power amplifier includes an integrated circuit in which an amplifier circuit is fabricated and an output impedance matching network comprising metal-insulator-metal (MIM) capacitors mounted on the integrated circuit chip with bonding wire inductors connecting the amplifier circuit with the capacitor elements. The resulting structure has a smaller form factor as compared to conventional power amplifiers employing planar transmission lines and surface mount technology capacitors.

Abstract: A hybrid microwave and millimeter wave integrated circuit (MMIC) RF power amplifier includes an integrated circuit in which an amplifier circuit is fabricated and an output impedance matching network comprising metal-insulator-metal (MIM) capacitors mounted on the integrated circuit chip with bonding wire inductors connecting the amplifier circuit with the capacitor elements. The resulting structure has a smaller form factor as compared to conventional power amplifiers employing planar transmission lines and surface mount technology capacitors.