Abstract: The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

Abstract: A motor rotor apparatus includes a rotor core and a bonding element embedded in the rotor core. The rotor core includes a first air sub-groove, and the first air sub-groove includes a first tooth and a first slot. The bonding element includes a second tooth and a second slot. The first tooth is engaged with the second tooth, and the first slot is engaged with the second slot.

Abstract: A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes.

Abstract: A vehicle torque processing method, apparatus, and a vehicle controller are provided. The method includes allocating torque to the first power drive system and a second power drive system based on required torque, where a sum of first torque output by the first power drive system and second torque output by the second power drive system is equal to the required torque. At a current vehicle speed, if an intrinsic frequency of the first power drive system is a frequency in a resonance frequency range corresponding to the first power drive system, based on the required torque and peak torque of the second power drive system, the torque output by the first power drive system and the torque output by the second power drive system are adjusted.

Abstract: A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

Abstract: A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

Abstract: A medical stent, including a squeezable and expandable tubular wire mesh and an anti-sticking atomic layer deposition coating deposited on surfaces of the wire mesh. A method for manufacturing a medical stent, including taking a squeezable and expandable (i.e., deformable) tubular wire mesh, and depositing an anti-sticking atomic layer deposition coating on surfaces of the wire mesh to prevent the wire mesh from being stuck with itself when expanding from a squeezed form to a fully expanded form.

Abstract: A medical device is provided comprising an at least one surface deposited with at least a first conformal coating and a second conformal coating deposited on the first conformal coating, wherein the first conformal coating comprises the first chemical substance and the second conformal coating comprises the second chemical substance. In some instances, the first coating is deposited over the first chemical substance and the second coating is deposited over the second chemical substance.

Abstract: A semiconductor device includes a terminal, a signal substrate, a supporting conductor and a bonding layer. The terminal includes an electrically conductive tubular holder and a metal pin inserted into the holder. The signal substrate includes a wiring layer and an insulating substrate. The supporting conductor supports the wiring layer via the insulating substrate. The bonding layer is interposed between the supporting substrate and the signal substrate. The insulating substrate includes an obverse surface and a reverse surface spaced apart in a thickness direction of the signal substrate. The wiring layer is disposed on the obverse surface, and the terminal is secured to the wiring layer. The holder is bonded to the wiring layer. The metal pin extends in the thickness direction. The bonding layer electrically insulates the signal substrate and the supporting conductor.

Abstract: The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

Abstract: A semiconductor device includes: a first conductive plate and a second conductive plate spaced apart from each other in a direction x; a third conductive plate facing the first and second conductive plates in a direction z; a first semiconductor element arranged between the first conductive plate and the third conductive plate; a second semiconductor element arranged between the second conductive plate and the third conductive plate; a positive input terminal electrically connected to the first conductive plate; a negative input terminal electrically connected to the second conductive plate; an output terminal electrically connected to the third conductive plate; and a sealing resin covering at least the first and second semiconductor elements.

Abstract: A semiconductor device includes a support layer, a semiconductor element including an element metal layer facing the support layer, and a joining layer interposed between the support layer and the element metal layer. The element metal layer includes a first edge extending in a first direction orthogonal to a thickness direction of the semiconductor element. The joining layer includes a second edge located closest to the first edge and extending in the first direction. When the second edge is spaced apart from the element metal layer as viewed in the thickness direction, the distance from the first edge to the second edge in a second direction orthogonal to the thickness direction and the first direction is equal to or less than twice the thickness of the joining layer.

Abstract: A semiconductor device includes a conductive substrate, first semiconductor elements bonded to the substrate, a first terminal on a side in first direction relative to the substrate, and a conductor (first/second wirings) connected to the semiconductor elements and the terminal. The first wiring includes a first end connected to the terminal and a second end separated from the first end in first direction. The second wiring is connected to the first wiring between the first and second ends. The first wiring includes first and second parts. The first part is between the first end and a connecting portion (first connecting part) at which the second wiring is connected to the first wiring. The second part is between the first connecting part and the second end. In a direction crossing the flow direction of the main circuit current, the first part has a larger size than the second part.

Abstract: A semiconductor device includes two semiconductor elements for switching, a first conductor electrically connecting the second electrodes of the two semiconductor elements, a second conductor electrically connecting the second electrodes, and a first power terminal electrically connected to the first conductor and the second electrodes of the first semiconductor elements. The two first semiconductor element are connected in parallel with each other. A first conduction path and a second conduction path are provided between the second electrodes of the two semiconductor elements and extend through the first conductor and the second conductor, respectively. The first conduction path and the second conduction path are at least partially in parallel. The combined inductance of the first conduction path and the second conduction path is smaller than the inductance of the first conduction path.

Abstract: A request for information to verify integrity of program code of a first processor enclave is received from a remote requestor via a network. The requested information is provided. Private information for use by the program code of the first processor enclave is received. The program code of the first processor enclave is used to select based at least in part on the received private information a second processor enclave among a plurality of different processor enclave options. Integrity of program code of the selected second processor enclave is verified. At least a portion of the received private information is provided to the selected second processor enclave for processing by the verified program code of the selected second processor enclave.

Abstract: A biocompatible medical device is provided having at least one surface, wherein at least a part of this surface is coated with a biocompatible layer configured to provide visibility of the device in X-rays.

Abstract: The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

Abstract: The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.

Abstract: A semiconductor device includes an insulating layer, a semiconductor element, a wiring layer and a sealing resin. The insulating layer includes obverse and reverse surfaces spaced apart in a thickness direction, and a penetrated part extending in the thickness direction. The semiconductor element, in contact with the obverse surface, includes an electrode corresponding to the penetrated part. The wiring layer includes connecting and main parts, where the connecting part is in the penetrated part and contacts the electrode, and the main part is connected to the connecting part on the reverse surface. The sealing resin, contacting the obverse surface, covers the semiconductor element. The electrode has a connecting surface facing the connecting part and including a first region exposed from the insulating layer through the penetrated part and a second region contacting the insulating layer. The first region has a greater surface roughness than the second region.