Patents by Inventor Xiaoping Bian

Xiaoping Bian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9852749
    Abstract: An apparatus, according to one embodiment, comprises a near field transducer; an adhesion layer on a media facing side of the near field transducer, the adhesion layer comprising Ni and Cr; and a protective layer on a media facing side of the adhesion layer. Other apparatuses, systems and methods are described in additional embodiments.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: December 26, 2017
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Xiaoping Bian, Qing Dai, Alan C. Lam, Barry C. Stipe
  • Publication number: 20170186451
    Abstract: An apparatus, according to one embodiment, comprises a near field transducer; an adhesion layer on a media facing side of the near field transducer, the adhesion layer comprising Ni and Cr; and a protective layer on a media facing side of the adhesion layer. Other apparatuses, systems and methods are described in additional embodiments.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Inventors: Xiaoping Bian, Qing Dai, Alan C. Lam, Barry C. Stipe
  • Patent number: 9633677
    Abstract: A system, according to one embodiment, includes a near field transducer; an adhesion layer on a media facing side of the near field transducer, the adhesion layer comprising Ni and Cr; and a protective layer on a media facing side of the adhesion layer. Other systems and methods are described in additional embodiments.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: April 25, 2017
    Assignee: Western Digital Technologies, Inc.
    Inventors: Xiaoping Bian, Qing Dai, Alan C. Lam, Barry C. Stipe
  • Publication number: 20160372140
    Abstract: A system, according to one embodiment, includes a near field transducer; an adhesion layer on a media facing side of the near field transducer, the adhesion layer comprising Ni and Cr; and a protective layer on a media facing side of the adhesion layer. Other systems and methods are described in additional embodiments.
    Type: Application
    Filed: June 16, 2015
    Publication date: December 22, 2016
    Inventors: Xiaoping Bian, Qing Dai, Alan C. Lam, Barry C. Stipe
  • Publication number: 20160314811
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. The onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively low pressure. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Patent number: 9412404
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: August 9, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Patent number: 9190091
    Abstract: The present disclosure relates to a planarized bit-patterned magnetic medium that has a magnetic layer, including island regions and trench regions, a first carbon layer applied over the magnetic layer, and a second carbon layer applied over the first carbon layer, wherein the second carbon layer has been removed in the island regions. The first carbon layer may have a lower material removal rate when exposed to chemical-mechanical polishing than the second carbon layer. The present disclosure also relates to a method for planarizing a bit-patterned magnetic medium and a slurry composition for the chemical-mechanical polishing of carbon layers, the slurry composition including an oxidizer component, a catalyst component, a particulate component, and a reaction control component.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: November 17, 2015
    Assignee: HGST NETHERLANDS, B.V.
    Inventors: Kurt A. Rubin, Richard L. White, Xiaoping Bian
  • Patent number: 9082442
    Abstract: Perpendicular magnetic recording media has been enhanced by controlling the initial growth of magnetic oxide layers and increased magnetic isolation between the grains in the initial magnetic layer. An onset magnetic oxide layer is sputter deposited in an argon-oxygen gas mixture between the main CoPtCr-oxide magnetic layers and the underlying Ru layer. The insertion of the onset magnetic oxide layer enhances the coercivity of the oxide magnetic layers and also improves the nucleation field. The media signal-to-noise ratio and bit error rate also are significantly improved due to the improvement of the initial segregation of Co magnetic grains in the magnetic oxide layers.
    Type: Grant
    Filed: September 15, 2008
    Date of Patent: July 14, 2015
    Assignee: HGST NETHERLANDS B.V.
    Inventors: Xiaoping Bian, Jyh-Kau Chang, Weikang Shen, Zhupei Shi, Kai Tang
  • Publication number: 20150037614
    Abstract: The present disclosure relates to a planarized bit-patterned magnetic medium that has a magnetic layer, including island regions and trench regions, a first carbon layer applied over the magnetic layer, and a second carbon layer applied over the first carbon layer, wherein the second carbon layer has been removed in the island regions. The first carbon layer may have a lower material removal rate when exposed to chemical-mechanical polishing than the second carbon layer. The present disclosure also relates to a method for planarizing a bit-patterned magnetic medium and a slurry composition for the chemical-mechanical polishing of carbon layers, the slurry composition including an oxidizer component, a catalyst component, a particulate component, and a reaction control component.
    Type: Application
    Filed: August 2, 2013
    Publication date: February 5, 2015
    Applicant: HGST Netherlands B.V.
    Inventors: Kurt A. Rubin, Richard L. White, Xiaoping Bian
  • Patent number: 8747628
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: June 10, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Patent number: 8721903
    Abstract: A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: May 13, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Qing Dai, Oleksandr Mosendz, Franck Dreyfus Rose, Run-Han Wang
  • Patent number: 8580409
    Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: November 12, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Zhupei Shi
  • Publication number: 20130264306
    Abstract: A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 10, 2013
    Inventors: Xiaoping Bian, Qing Dai, Oleksandr Mosendz, Franck Dreyfus Rose, Run-Han Wang
  • Publication number: 20120325771
    Abstract: A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.
    Type: Application
    Filed: September 5, 2012
    Publication date: December 27, 2012
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Xiaoping Bian, Qing Dai, Dan S. Kercher, Mark F. Mercado, Qi-fan Xiao, Jane J. Zhang
  • Publication number: 20120186974
    Abstract: A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: April 3, 2012
    Publication date: July 26, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Patent number: 8168310
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: May 1, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Publication number: 20120012554
    Abstract: A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.
    Type: Application
    Filed: July 15, 2010
    Publication date: January 19, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Xiaoping Bian, Qing Dai, Dan S. Kercher, Mark F. Mercado, Qi-fan Xiao, Jane J. Zhang
  • Publication number: 20110141609
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Mark F. Mercado, Mohammad T. Mirzamaani, Kai Tang
  • Publication number: 20110141621
    Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
    Type: Application
    Filed: December 15, 2009
    Publication date: June 16, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
  • Publication number: 20110111261
    Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
    Type: Application
    Filed: November 9, 2009
    Publication date: May 12, 2011
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Zhupei Shi