Abstract: Computer program product and systems using the method are also provided.

Abstract: A failover system of a distributed data processing system is disclosed. The failover system includes a primary service server, a backup service server, a configuration server, and a monitoring server. The primary service server is operable to provides a network service to clients of a distributed data processing system in response to configuration information for supporting the primary service server in providing the network service. The configuration server provides the configuration information to the primary service server in response to a service identification from the primary service server. The monitoring server monitors the provision of the network service by the primary service server in response to the service identification from the primary service server and provides the service identification to the backup service server upon a failure of the primary service server. The backup service server is operable to provides the network service in response to the configuration information.

Abstract: A network service allocation device is disclosed. The device comprises a probe, a module, and an engine. The device collects performance data relating to the physical characteristics of a distributed data processing system. The module utilizes the performance data to identify two or more node clusters on the distributed data processing system. The engine correlates the node clusters and one or more performance rules as related to the network service to provide a map of node cluster(s) for supporting the network service, or a list of one or more servers within a node cluster for supporting the network service.

Abstract: P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.