Patents by Inventor Xiaoping Mei

Xiaoping Mei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9458553
    Abstract: The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: October 4, 2016
    Assignee: Beijing University of Technology
    Inventors: Yijian Jiang, Yunfeng Ma, Yue Wang, Xiaoping Mei, Chunping Zhang, Qiang Wang, Yangli Xu
  • Publication number: 20160230308
    Abstract: The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.
    Type: Application
    Filed: December 31, 2014
    Publication date: August 11, 2016
    Inventors: Yijian Jiang, Yunfeng Ma, Yue Wang, Xiaoping Mei, Chunping Zhang, Qiang Wang, Yangli Xu