Patents by Inventor Xiaoping S. Yang

Xiaoping S. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
    Patent number: 9117838
    Abstract: A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: August 25, 2015
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Dong Xu, Xiaoping S. Yang, Wendell Kong, Lee M. Mohnkern, Phillip M. Smith, Pane-chane Chao
  • Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
    Patent number: 8445941
    Abstract: A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
    Type: Grant
    Filed: August 5, 2009
    Date of Patent: May 21, 2013
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Dong Xu, Xiaoping S. Yang, Wendell Kong, Lee M. Mohnkern, Phillip M. Smith, Pane-chane Chao