Patents by Inventor Xiaopu LI
Xiaopu LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145252Abstract: Exemplary semiconductor processing chamber faceplates may include a body having a first surface and a second surface opposite the first surface. The body may define a plurality of apertures that extend through one or both of the first surface and the second surface. The faceplates may include a heater disposed within an interior of the body. The faceplates may include a first RF mesh disposed between the heater and the first surface. The faceplates may include a second RF mesh disposed between the heater and the second surface. The first RF mesh and the second RF mesh may be coupled together and form a Faraday cage about the heater.Type: ApplicationFiled: November 2, 2022Publication date: May 2, 2024Applicant: Applied Materials, Inc.Inventors: Rutvij Naik, Vijay Sarthy Mysore Sreedhara, Xiaopu Li, Shawyon Jafari, Chidambara A. Ramalingam, Edward P. Hammond, Juan Carlos Rocha-Alvarez
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Patent number: 11959868Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.Type: GrantFiled: February 3, 2021Date of Patent: April 16, 2024Assignee: Applied Materials, Inc.Inventors: Xiaopu Li, Kallol Bera, Yaoling Pan, Kelvin Chan, Amir Bayati, Philip Allan Kraus, Kenric T. Choi, William John Durand
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Patent number: 11908662Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.Type: GrantFiled: October 24, 2019Date of Patent: February 20, 2024Assignee: Applied Materials, Inc.Inventors: Xiaopu Li, Kallol Bera, Edward P. Hammond, IV, Jonghoon Baek, Amit Kumar Bansal, Jun Ma, Satoru Kobayashi
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Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
Patent number: 11823871Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: GrantFiled: March 1, 2019Date of Patent: November 21, 2023Assignee: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Publication number: 20230358790Abstract: Embodiments disclosed herein include a sensor. In an embodiment, the sensor comprises a board, wherein an aperture is formed through the board, a current loop winding through the board around the aperture, and a voltage ring around the aperture and within an inner perimeter of the current loop, wherein the voltage ring comprises an interior ring, an insulator ring around the interior ring, and an exterior ring around the insulator ring.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Inventors: David Coumou, Xiaopu Li, Michelle SanPedro
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Publication number: 20230107392Abstract: Methods of generating a plasma in a semiconductor processing chamber comprise: applying a radio frequency (RF) power to generate a plasma in a plasma region of the processing chamber, the processing chamber containing: a showerhead, an ion blocker plate, and a substrate, and the plasma region being defined by a front surface of the showerhead and a back surface of the ion blocker plate; and applying a bias the ion blocker plate so that there is no light-up in the processing chamber. Some methods further include dynamically tuning the bias by assessing conditions of light-up or no light-up and adjusting the bias. Some methods further include applying the bias zonally.Type: ApplicationFiled: October 1, 2021Publication date: April 6, 2023Applicant: Applied Materials, IncInventors: Kallol Bera, Xiaopu Li, Tsutomu Tanaka
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Patent number: 11581206Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.Type: GrantFiled: March 6, 2020Date of Patent: February 14, 2023Assignee: Applied Materials, Inc.Inventors: Yaoling Pan, Patrick John Tae, Leonard Tedeschi, Jennifer Sun, Philip Allan Kraus, Xiaopu Li, Kallol Bera, Michael D. Willwerth, Albert Barrett Hicks, III, Lisa J. Enman, Mark Joseph Saly, Daniel Thomas McCormick
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Publication number: 20230011938Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.Type: ApplicationFiled: July 9, 2021Publication date: January 12, 2023Applicant: Applied Materials, Inc.Inventors: Saketh Pemmasani, Daemian Raj Benjamin Raj, Xiaopu Li, Akshay Dhanakshirur, Mayur Govind Kulkarni, Madhu Santosh Kumar Mutyala, Deenesh Padhi, Hang Yu
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Publication number: 20220333245Abstract: Aspects generally relate to systems, methods, and apparatus for applying a bias voltage to an ion blocker plate during substrate processing operations. In one aspect, the bias voltage is a negative direct current (DC) voltage. In one aspect, the bias voltage is a radio frequency (RF) voltage having a bias frequency of 2 MHz or less. In one implementation, a system for processing substrates includes a processing chamber. The processing chamber includes a processing volume, a pedestal positioned in the processing volume, and a lid assembly. The system includes a power line coupled to a faceplate of the lid assembly to supply a radio frequency (RF) power to the faceplate. The system includes a bias voltage line coupled to an ion blocker plate of the lid assembly to supply a bias voltage to the ion blocker plate.Type: ApplicationFiled: April 20, 2021Publication date: October 20, 2022Inventors: Xiaopu LI, Kallol BERA, Jay D. PINSON, II, Martin Jay SEAMONS
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Publication number: 20220244205Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.Type: ApplicationFiled: February 3, 2021Publication date: August 4, 2022Inventors: Xiaopu Li, Kallol Bera, Yaoling Pan, Kelvin Chan, Amir Bayati, Philip Allan Kraus, Kenric T. Choi, William John Durand
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Publication number: 20220028710Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.Type: ApplicationFiled: July 21, 2020Publication date: January 27, 2022Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, Yang Guo, Seyyed Abdolreza Fazeli, Nitin Pathak, Badri N. Ramamurthi, Kallol Bera, Xiaopu Li, Philip A. Kraus, Swaminathan T. Srinivasan
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Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool
Publication number: 20210327686Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: ApplicationFiled: April 29, 2021Publication date: October 21, 2021Applicant: Applied Materials, Inc.Inventors: Xiaopu Li, Jozef Kudela, Kallol Bera, Tsutomu Tanaka, Dmitry A. Dzilno -
Publication number: 20210280443Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.Type: ApplicationFiled: March 6, 2020Publication date: September 9, 2021Inventors: Yaoling Pan, Patrick John Tae, Leonard Tedeschi, Jennifer Sun, Philip Allan Kraus, Xiaopu Li, Kallol Bera, Michael D. Willwerth, Albert Barrett Hicks, III, Lisa J. Enman, Mark Joseph Saly, Daniel Thomas McCormick
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Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool
Publication number: 20210050187Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.Type: ApplicationFiled: March 1, 2019Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster -
Publication number: 20200161093Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.Type: ApplicationFiled: October 24, 2019Publication date: May 21, 2020Inventors: Xiaopu LI, Kallol BERA, Edward P. HAMMOND, IV, Jonghoon BAEK, Amit Kumar BANSAL, Jun MA, Satoru KOBAYASHI