Abstract: There is provided a deep brain stimulation system having k focuses, which comprises: a first electrode and a second electrode, used for connecting one side of a brain scalp; a third electrode and a fourth electrode, used for connecting the other side of the brain scalp; and a first signal generation unit, a second signal generation unit, . . . , a (2k?1)th signal generation unit and a 2kth signal generation unit, wherein the k is a positive integer greater than or equal to 2; and each of the signal generation units is used for providing the following currents for the first electrode to the fourth electrode: a first current and a second current, which are interfered at a deep portion of a brain to form a first focus; and a (2k?1)th current and a 2kth current, which are interfered at the deep portion of the brain to form a kth focus.

Abstract: The present disclosure discloses a deep brain stimulation system having k focuses, which comprises: a first electrode and a second electrode, used for connecting one side of a brain scalp; a third electrode and a fourth electrode, used for connecting the other side of the brain scalp; and a first signal generation unit, a second signal generation unit, . . . , a (2k?1)th signal generation unit and a 2kth signal generation unit, wherein the k is a positive integer greater than or equal to 2; and each of the signal generation units is used for providing the following currents for the first electrode to the fourth electrode: a first current and a second current, which are interfered at a deep portion of a brain to form a first focus; and a (2k?1)th current and a 2kth current, which are interfered at the deep portion of the brain to form a kth focus; for the first current, the second current, . . .

Abstract: A stack package for a high density memory module includes at least one memory chip, an ASIC and an interposer, wherein the interposer comprises a first surface having contacts arranged in electrical communication with corresponding contacts on the ASIC and a second, substantially opposite surface including contacts arranged in electrical communication with corresponding contacts on a PCB. The at least one memory chip is dimensioned to fit within a cutout section in the interposer.

Abstract: Methods for assembling a stack package for a high density IC module on a PCB include the steps of assembling a first layer of the stack package on the PCB, assembling a second layer of the stack package on the first layer and assembling a third layer of the stack package on the second layer, such that each layer is provided in electrical communication with the PCB. Additional layers may be added to the stack package.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and precoated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by precoating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by precoating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.

Abstract: A flip-chip device and process for fabricating the device employs a multilayer encapsulant that includes a first portion encapsulant having a coefficient of thermal expansion of at most 30 ppm/° C. and an elastic modulus of 2-20 GPa and a second portion comprising a polymer flux having a coefficient of thermal expansion that may exceed 30 ppm/° C.

Abstract: A flip-chip device and process for fabricating the device employs a multilayer encapsulant that includes a first portion encapsulant having a coefficient of thermal expansion of at most 30 ppm/° C. and an elastic modulus of 2-20 GPa and a second portion comprising a polymer flux having a coefficient of thermal expansion that may exceed 30 ppm/° C.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. There is also provided a flip-chip configuration having a flexible tape lamination for underfill encapsulation. With this configuration, the complaint solder/flexible encapsulant understructure absorbs the strain caused by the difference in the thermal coefficients of expansion between the chip and the substrate and provides enhanced ruggedness.

Abstract: A flip-chip device and process for fabricating the device employs a multilayer encapsulant that includes a first portion encapsulant having a coefficient of thermal expansion of at most 30 ppm/° C. and an elastic modulus of 2-20 GPa and a second portion comprising a polymer flux having a coefficient of thermal expansion that may exceed 30 ppm/° C.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. There is also provided a flip-chip configuration having a flexible tape lamination for underfill encapsulation. With this configuration, the complaint solder/flexible encapsulant understructure absorbs the strain caused by the difference in the thermal coefficients of expansion between the chip and the substrate and provides enhanced ruggedness.

Abstract: A simplified process for flip-chip attachment of a chip to a substrate is provided by pre-coating the chip with an encapsulant underfill material having separate discrete solder columns therein to eliminate the conventional capillary flow underfill process. Such a structure permits incorporation of remeltable layers for rework, test, or repair. It also allows incorporation of electrical redistribution layers. In one aspect, the chip and pre-coated encapsulant are placed at an angle to the substrate and brought into contact with the pre-coated substrate, then the chip and pre-coated encapsulant are pivoted about the first point of contact, expelling any gas therebetween until the solder bumps on the chip are fully in contact with the substrate. There is also provided a flip-chip configuration having a complaint solder/flexible encapsulant understructure that deforms generally laterally with the substrate as the substrate undergoes expansion or contraction.