Abstract: A system can apply a Global Reduced Order Modeling (ROM), a Zonal ROM, or a Layer-By-Layer analysis method to accelerate computations of a static displacement field of a substrate during modeling of thermo-compression bonding. The system fully takes into account a glass transition of dielectric substrates as well as nonhomogeneity of the various layers.

Abstract: An optical fiber cable with optical fiber sensing and communication functions includes an outer sheath layer, an inner sheath layer, communicating optical fibers, and sensing optical fibers. The communicating optical fibers are laid inside the inner sheath layer, the sensing optical fibers are laid between the inner sheath layer and the outer sheath layer, and an inner reinforcing member is filled in the inner sheath layer. An outer reinforcing member-is filled between the inner sheath layer and the outer sheath layer, and a plurality of cutting kerfs for slotting are provided on an outer side wall of the outer sheath layer along a length direction of the outer sheath layer. A manufacturing method includes processes of cable paying-off, molding, extruding to form sheath layers, making cutting kerfs, cooling and cable taking-up, etc., which has simple operation and low production costs.

Abstract: An optical fiber cable with optical fiber sensing and communication functions includes an outer sheath layer, an inner sheath layer, communicating optical fibers, and sensing optical fibers. The communicating optical fibers are laid inside the inner sheath layer, the sensing optical fibers are laid between the inner sheath layer and the outer sheath layer, and an inner reinforcing member is filled in the inner sheath layer. An outer reinforcing member is filled between the inner sheath layer and the outer sheath layer, and a plurality of cutting kerfs for slotting are provided on an outer side wall of the outer sheath layer along a length direction of the outer sheath layer. A manufacturing method includes processes of cable paying-off, molding, extruding to form sheath layers, making cutting kerfs, cooling and cable taking-up, etc., which has simple operation and low production costs.

Abstract: Disclosed is a MOS transistor including a multi-work function metal nitride gate electrode. The MOS transistor comprises a semiconductor substrate and a central gate electrode formed on the semiconductor substrate. The central gate electrode is formed of a metal nitride layer. A source side gate electrode and a drain side gate electrode are formed on respective opposite sidewalls of the central gate electrode. The source and drain side gate electrodes are composed of doped metal nitride containing first impurities having an electronegativity less than that of nitrogen or second impurities having an electronegativity greater than that of nitrogen.

Abstract: Disclosed is a MOS transistor including a multi-work function metal nitride gate electrode. The MOS transistor comprises a semiconductor substrate and a central gate electrode formed on the semiconductor substrate. The central gate electrode is formed of a metal nitride layer. A source side gate electrode and a drain side gate electrode are formed on respective opposite sidewalls of the central gate electrode. The source and drain side gate electrodes are composed of doped metal nitride containing first impurities having an electronegativity less than that of nitrogen or second impurities having an electronegativity greater than that of nitrogen.