Abstract: A method of forming a metal-oxide-semiconductor (MOS) device includes the following steps: forming a semiconductor layer of a first conductivity type having source and drain regions of a second conductivity type, a channel region and a lightly-doped drain region formed therein; forming a gate over the channel region proximate an upper surface of the semiconductor layer; after the forming steps, depositing a first dielectric layer having a first thickness over an upper surface of the semiconductor layer; etching the first dielectric layer in a region over the lightly-doped drain proximate to the gate to reduce its thickness; conformably depositing a second dielectric layer having a second thickness over the first dielectric layer, including in the etched region, the second thickness being less than the first thickness; and forming a shielding electrode over the second dielectric layer.