Abstract: A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (200) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) and an input-output connecting member (420) are formed on a first bonding surface (100a) of the device wafer (100). The MEMS die (200) is coupled to the first bonding surface (100a) through a bonding layer (500). The MEMS die (200) includes a closed micro-cavity (220) and a second contact pad (220). The first contact pad (410) is electrically connected to a corresponding second contact pad (220). An opening (510) that exposes the input-output connecting member (420) is formed in the bonding layer (500).

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. The integration is accomplished by bonding a substrate containing an upper cavity to a device wafer containing both the control circuit and a lower cavity so that a piezoelectric vibrator is sandwiched between the device wafer and the substrate. An increased degree of integration of the crystal resonator and on-chip modulation of its parameters can be achieved by further bonding a semiconductor die to the device wafer. Compared to traditional ones, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator of the present invention is more compact in size and hence less power-consuming.

Abstract: A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a closed micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a surface opposing the first surface (100a).

Abstract: A MEMS package structure and a method for manufacturing same. The MEMS package structure comprises a MEMS die (200) and a device wafer (100). The MEMS die (200) has micro-cavities (211, 221) and contact pads (212, 222) configured to be coupled to an external electrical signal. The micro-cavity (221) of the MEMS die (200) has an opening (221a) in communication with the outside. The device wafer (100) is provided therein with a control unit corresponding to the MEMS die (200). An interconnection structure (300) is provided in the device wafer (100) and is electrically connected to each of the contact pads (212, 222) and the control unit. A rewiring layer (400) electrically connected to the interconnection structure (300) is provided on a second surface of the device wafer (100).

Abstract: A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (200) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) and an input-output connecting member (420) are formed on a first bonding surface (100a) of the device wafer (100). The MEMS die (200) is coupled to the first bonding surface (100a) through a bonding layer (500). The MEMS die (200) includes a closed micro-cavity (220) and a second contact pad (220). The first contact pad (410) is electrically connected to a corresponding second contact pad (220). An opening (510) that exposes the input-output connecting member (420) is formed in the bonding layer (500).

Abstract: A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes MEMS dies (200) and a device wafer (100), wherein the device wafer (100) is provided with a control unit and an interconnection structure (300); a first bonding face (100a) of the device wafer (100) is provided with first contact pads (410) and an input and output connection member (420); the MEMS dies (200) are arranged side by side on the first bonding face (100a) by a bonding layer (500); the MEMS die (200) has a micro-cavity (210) and a second contact pad (220); the micro-cavity (210) of the MEMS die (200) has a through hole (210a) in communication with the outside; the first contact pad (410) is electrically connected to the corresponding second contact pad (220); and the bonding layer (500) has an opening (510) exposing the input and output connection member (420).

Abstract: The present disclosure provides an integration method and integration structure for a control circuit and an acoustic wave filter.

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. A lower cavity (120) is formed in a device wafer (100) containing the control circuit (110), and the device wafer (100) is then processed so that the lower cavity (120) is exposed from a back side (100D) of the device wafer (100). A substrate (600) in which an upper cavity (610) is formed at a corresponding location is bonded to the back side (100D) of the device wafer (100) in such a manner that the piezoelectric vibrator (500) is sandwiched between the device wafer (100) and the substrate (600), with the upper cavity (610) and the lower cavity (120) being aligned with each other on opposing side of the piezoelectric vibrator (500), thus resulting in the formation of the crystal resonator and simultaneously achieving the integration of the crystal resonator with the control circuit (110).

Abstract: A method for integrating a crystal resonator with a control circuit and an integrated structure thereof. Integration of the crystal resonator with the control circuit (110) is accomplished by forming a lower cavity (120) in a device wafer (100) containing the control circuit (110) and an upper cavity (310) in a substrate (300), and by bonding the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). A semiconductor die (700) can be further bonded to a back side of the same device wafer (100). This results in an increased degree of integration of the crystal resonator and allows on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. The integration of the crystal resonator with the control circuit is accomplished by bonding a substrate (300) containing an upper cavity (310) to a device wafer containing both the control circuit and a lower cavity (120) so that a piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). In addition, a semiconductor die (700) may be bonded to a back side of the device wafer (100).

Abstract: An integrated structure of crystal resonator and control circuit and an integration method therefor. A lower cavity is formed in a device wafer, and an upper cavity is formed in a substrate. A bonding process is then performed to bond the device wafer and the substrate together in such a manner that a piezoelectric vibrator is sandwiched between the device wafer and the substrate, with the lower and upper cavities being located on opposing sides of the piezoelectric vibrator, thus resulting in the formation of the crystal resonator. Moreover, the crystal resonator is brought into electrical connection with the control circuit, achieving integration of the two. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

Abstract: An integrated structure of crystal resonator and control circuit and an integration method therefor. The crystal resonator is formed by first forming the lower cavity (120) in the device wafer (100) containing the control circuit (110), forming the piezoelectric vibrator (200) on the device wafer (100) and then enclosing the piezoelectric vibrator (200) within the upper cavity (400) through forming the cap layer (420) using a planar fabrication process. In addition, a semiconductor die (500) is bonded to the same device wafer (100), helping in enhancing device performance by allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming.

Abstract: An integrated structure of crystal resonator and control circuit (110) and an integration method therefor. A lower cavity (102) is formed in a device wafer (100) containing the control circuit (110), and an upper cavity (310) is formed in a substrate (300). A bonding process is performed to bond the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator (200) is sandwiched between the device wafer (100) and the substrate (300). In this way, integration of the crystal resonator and the control circuit (110) is achieved. A semiconductor die (600) can be further bonded to the same semiconductor substrate. This helps in improving performance of the crystal resonator by allowing on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. A piezoelectric vibrator (500) is formed on a back side of a device wafer (100) containing the control circuit, and planar fabrication processes are utilized to form a cap layer (720) which encloses the piezoelectric vibrator (500) within an upper cavity (700). Additionally, a semiconductor die (900) can be bonded to a front side of the device wafer (100). In addition to an increased degree of integration of the crystal resonator due to such integration with both the control circuit (110) and the semiconductor die (900), this also allows on-chip modulation of the crystal resonator's parameters. Moreover, compared with traditional crystal resonators, the resulting crystal resonator is more compact in size and hence less power-consuming.

Abstract: The present disclosure provides an integration method and integration structure for a control circuit and a Surface Acoustic Wave (SAW) filter. The integration method includes: providing a base, the base being provided with a control circuit; forming a cavity on the base; providing an SAW resonating plate, an input electrode and an output electrode being arranged on a surface of the SAW resonating plate; facing the surface of the SAW resonating plate towards the base, such that the SAW resonating plate is bonded to the base and seals the cavity; and electrically connecting the control circuit to the input electrode and the output electrode. The present disclosure may control the SAW filter through the control circuit provided on the base, and may avoid the problems of the complex electrical connection process, large insertion loss and the like due to a fact that the existing SAW filter is integrated to the Printed Circuit Board (PCB) as a discrete device.

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. The resonator is formed by forming a lower cavity (120) in the device wafer (100) containing the control circuit (110) and a piezoelectric vibrator (200) on a front side (100U) of the device wafer (100) and by fabricating a cap layer (420) using planar fabrication processes, which encloses the piezoelectric vibrator (200) within an upper cavity (400). In addition, a semiconductor die (500) may be bonded to a back side (100D) of the device wafer (100), helping in additionally increasing the integration of the crystal resonator and allowing on-chip modulation of the crystal resonator's parameters. In this way, in addition to being able to integrate with other semiconductor components more easily with a higher degree of integration, the crystal resonator is more compact in size and less power-consuming.

Abstract: The present disclosure provides an integration method and integration structure for a control circuit and a Bulk Acoustic Wave (BAW) filter. The integration method includes: providing a base, the base being provided with a control circuit: forming a first cavity on the base; providing a BAW resonating structure, an input electrode and an output electrode being arranged on a surface of the BAW resonating structure, and the BAW resonating structure including a second cavity; facing the surface of the BAW resonating structure towards the base, such that the BAW resonating structure is bonded to the base and seals the first cavity; and electrically connecting the control circuit to the input electrode and the output electrode.

Abstract: A structure and method for integrating a crystal resonator with a control circuit are disclosed. The crystal resonator is integrated with both the control circuit (110) and a semiconductor die (900) on a single device wafer (100) through forming a piezoelectric vibrator (500) on, and bonding the semiconductor die (900) to, a back side of the device wafer (100). This allows an increased degree of integration of the crystal resonator and on-chip modulation of its parameters. Compared with traditional crystal resonators, the disclosed crystal resonator is more compact in size and hence less power-consuming.

Abstract: A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). The MEMS die (210,220) is arranged on a first surface (100a) of the device wafer and includes a closed micro-cavity (211,221) and a contact pad (212,222) configured to be coupled to an external electrical signal. In the device wafer (100), there are arranged a control unit and an interconnection structure (300) electrically connected to each of the contact pad (212,222) and the control unit. On a second surface (100b) of the device wafer, there is arranged a rewiring layer (400) electrically connected to the interconnection structure (300). According to the MEMS package structure fabrication method, arranging the MEMS die (210,220) and the rewiring layer (400) on opposing sides of the device wafer (100) is conducive to shrinkage of the MEMS package structure.

Abstract: A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The micro-cavity (221) of the MEMS die (210,220) is provided with a through hole (221a) in communication with the exterior of the die. The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a second surface (100b) opposing the first surface (100a).