Patents by Inventor Xiaoshu Chen

Xiaoshu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Determining tilt angle in patterned arrays of high aspect-ratio structures by small-angle x-ray scattering
    Patent number: 11181489
    Abstract: Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 23, 2021
    Assignees: Lam Research Corporation, The Government of the United States of America, represented by the Secretary of Commerce, National Institute of Standards and Technology
    Inventors: William Dean Thompson, Regis Joseph Kline, Daniel F. Sunday, Wenli Wu, Osman Sorkhabi, Jin Zhang, Xiaoshu Chen
  • DETERMINING TILT ANGLE IN PATTERNED ARRAYS OF HIGH ASPECT RATIO STRUCTURES
    Publication number: 20200041426
    Abstract: Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.
    Type: Application
    Filed: July 30, 2019
    Publication date: February 6, 2020
    Inventors: William Dean Thompson, Regis Joseph Kline, Daniel F. Sunday, Wenli Wu, Osman Sorkhabi, Jin Zhang, Xiaoshu Chen
  • Methods for manufacturing nano-gap and angstrom-gap articles
    Patent number: 9777372
    Abstract: A method for fabricating articles for use in optics, electronics, and plasmonics includes large scale lithography or other patterning and conformal deposition such as by atomic layer deposition.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: October 3, 2017
    Assignee: REGENTS OF THE UNIVERSITY OF MINNESOTA
    Inventors: Sang-Hyun Oh, Xiaoshu Chen
  • NANO-GAP ARTICLES AND METHODS OF MANUFACTURE
    Publication number: 20150044428
    Abstract: A method for fabricating articles for use in optics, electronics, and plasmonics includes large scale lithography or other patterning and conformal deposition such as by atomic layer deposition.
    Type: Application
    Filed: August 7, 2014
    Publication date: February 12, 2015
    Inventors: Sang-Hyun Oh, Xiaoshu Chen