Patents by Inventor Xiaosong Chen

Xiaosong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12097461
    Abstract: A method for treating arsenic-containing flue gas is disclosed. In the method, the arsenic-containing flue gas is subjected to a dry pre-dedusting treatment, and the dedusted flue gas is pre-cooled and then introduced into a vortex quenching system. The arsenic-containing flue gas is divided into high-temperature flue gas and low-temperature flue gas through the vortex quenching system. The outlet temperature of the low-temperature flue gas is dropped below the desublimation temperature of gaseous arsenic trioxide. The low-temperature flue gas is subjected to a gas-solid separation to obtain solid arsenic trioxide and treated flue gas.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: September 24, 2024
    Assignees: BGRIMM TECHNOLOGY GROUP, Kunming University of Science and Technology
    Inventors: Guoqiang Chen, Senlin Tian, Ping Ning, Xiaosong Yang, Linan Shao, Zhilong Zhao
  • Patent number: 12096044
    Abstract: In communication applications, aggregate source image data at a transmitter exceeds the data that is needed to display a rendering of a viewport at a receiver. Improved streaming techniques that include estimating a location of a viewport at a future time. According to such techniques, the viewport may represent a portion of an image from a multi-directional video to be displayed at the future time, and tile(s) of the image may be identified in which the viewport is estimated to be located. In these techniques, the image data of tile(s) in which the viewport is estimated to be located may be requested at a first service tier, and the other tile in which the viewport is not estimated to be located may be requested at a second service tier, lower than the first service tier.
    Type: Grant
    Filed: March 9, 2023
    Date of Patent: September 17, 2024
    Assignee: APPLE INC.
    Inventors: Xiaohua Yang, Alexandros Tourapis, Dazhong Zhang, Hang Yuan, Hsi-Jung Wu, Jae Hoon Kim, Jiefu Zhai, Ming Chen, Xiaosong Zhou
  • Publication number: 20240243259
    Abstract: An electroactive material for an electrochemical cell includes one or more conductive oxygen storage material coatings or layers. The electroactive material includes a plurality of electroactive material particles disposed to form an electroactive material layer. In certain variations, at least a portion of the plurality of electroactive material particles may have a coating that includes a conductive oxygen storage material. In other variations, a conductive oxygen storage material layer may be disposed on one or more surfaces of the electroactive material layer. In still other variations, at least a portion of the plurality of electroactive material particles may have a coating that includes a conductive oxygen storage material, and a conductive oxygen storage material layer may be disposed on one or more surfaces of the electroactive material layer. The one or more conductive oxygen storage material coatings or layers may help to improve the thermal stability of the electroactive materials.
    Type: Application
    Filed: January 6, 2023
    Publication date: July 18, 2024
    Applicants: GM GLOBAL TECHNOLOGY OPERATIONS LLC, GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Mengyuan CHEN, Zhongyi LIU, Bradley R. FRIEBERG, Xiaosong HUANG, Nicholas Paul William PIECZONKA
  • Publication number: 20240243258
    Abstract: An electroactive material for an electrochemical cell includes one or more oxygen storage material coatings or layers. The electroactive material may include a plurality of electroactive material particles disposed to form an electroactive material layer. In certain variations, at least a portion of the plurality of electroactive material particles may have a coating that includes an oxygen storage material. In other variations, an oxygen storage material layer may be disposed on one or more surfaces of the electroactive material layer. In still other variations, at least a portion of the plurality of electroactive material particles may have a coating that includes an oxygen storage material, and an oxygen storage material layer may be disposed on one or more surfaces of the electroactive material layer. The one or more oxygen storage material coatings or layers may help to improve the thermal stability of the electroactive materials.
    Type: Application
    Filed: January 6, 2023
    Publication date: July 18, 2024
    Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Zhongyi LIU, Mengyuan CHEN, Bradley R. FRIEBERG, Xiaosong HUANG, Ratandeep Singh KUKREJA, Nicholas Paul William PIECZONKA
  • Publication number: 20240243219
    Abstract: The present application illustrates an AlN layer, a fabrication process and an epitaxial wafer, wherein the AlN layer is provided on a substrate layer, the substrate layer comprising a body and a protrusion, and the AlN layer comprising a first layer and a second layer; the first layer is disposed on the substrate; the second layer is disposed on the first layer; the AlN layer is layered or nucleated, the layered AlN layer is disposed on the body, and the nucleated AlN layer is disposed on the protrusion. The surface of the AlN layer fabricated according to the technical solution illustrated in the present application is uniform, and the surface roughness thereof can match a LED epitaxial wafer better.
    Type: Application
    Filed: September 22, 2022
    Publication date: July 18, 2024
    Inventors: Chuanguo CHEN, Baokun TANG, Zhijun XU, Han JIANG, Weizi SONG, Xiaosong RAO
  • Patent number: 12020827
    Abstract: A nuclear reactor includes a reactor container, a reactor core, a control drum assembly, a hot channel, a heat exchanger and a main pump. The reactor container contains a coolant; the reactor core is arranged at a lower middle part of the reactor container; the control drum assembly is arranged on an outer periphery of the reactor core, and includes control drums arranged at intervals along a peripheral direction of the reactor core; the hot channel is arranged in the reactor container and located above the reactor core. The hot channel has a bottom hermetically connected to the control drum assembly and a top hermetically connected to an inner top surface of the reactor container. The hot channel has a hot pool passage for the coolant to pass through. The heat exchanger is arranged in the reactor container and located on an outer periphery of the hot channel.
    Type: Grant
    Filed: December 31, 2021
    Date of Patent: June 25, 2024
    Assignee: STATE POWER INVESTMENT CORPORATION RESEARCH INSTITUTE
    Inventors: Linsen Li, Gang Zheng, Chunyuan Liu, Mian Xing, Peidong Sun, Yeoh Eing Yee, Zhaocan Meng, Xiaosong Chen, Zhen Luo, Yilin Zhang, Shuming Zhang, Xiaosheng Li, Zhihui Li, Xiaotao Liao, Canhui Sun, Yaodong Chen, Yuquan Li
  • Patent number: 11696488
    Abstract: A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.
    Type: Grant
    Filed: November 27, 2022
    Date of Patent: July 4, 2023
    Assignee: TIANJIN UNIVERSITY
    Inventors: Liqiang Li, Xiaosong Chen, Jiannan Qi, Wenping Hu
  • Publication number: 20230103127
    Abstract: A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.
    Type: Application
    Filed: November 27, 2022
    Publication date: March 30, 2023
    Inventors: Liqiang Li, Xiaosong Chen, Jiannan Qi, Wenping Hu
  • Publication number: 20220319723
    Abstract: A nuclear reactor includes a reactor container, a reactor core, a control drum assembly, a hot channel, a heat exchanger and a main pump. The reactor container contains a coolant; the reactor core is arranged at a lower middle part of the reactor container; the control drum assembly is arranged on an outer periphery of the reactor core, and includes control drums arranged at intervals along a peripheral direction of the reactor core; the hot channel is arranged in the reactor container and located above the reactor core. The hot channel has a bottom hermetically connected to the control drum assembly and a top hermetically connected to an inner top surface of the reactor container. The hot channel has a hot pool passage for the coolant to pass through. The heat exchanger is arranged in the reactor container and located on an outer periphery of the hot channel.
    Type: Application
    Filed: December 31, 2021
    Publication date: October 6, 2022
    Inventors: Linsen Li, Gang Zheng, Chunyuan Liu, Mian Xing, Peidong Sun, Yeoh Eing Yee, Zhaocan Meng, Xiaosong Chen, Zhen Luo, Yilin Zhang, Shuming Zhang, Xiaosheng Li, Zhihui Li, Xiaotao Liao, Canhui Sun, Yaodong Chen, Yuquan Li