Abstract: A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small.

Abstract: A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small.