Patents by Inventor Xiaowan DAI

Xiaowan DAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method thereof
    Patent number: 11908865
    Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate. The substrate includes a first region, a second region, and an isolation region between the first region and the second region. The semiconductor structure also includes a first fin, a second fin and a third fin disposed over the first region, the second region, and the isolation region, respectively. Further, the semiconductor structure includes a gate structure. The gate structure includes a first work function layer over the first region and a first portion of the isolation region, and a second work function layer over the second region and a second portion of the isolation region. An interface where the first work function layer is in contact with the second work function layer is located over a top surface of the third fin.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: February 20, 2024
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Da Huang, Yao Qi Dong, Xiaowan Dai, Zhen Tian
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20220231024
    Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate. The substrate includes a first region, a second region, and an isolation region between the first region and the second region. The semiconductor structure also includes a first fin, a second fin and a third fin disposed over the first region, the second region, and the isolation region, respectively. Further, the semiconductor structure includes a gate structure. The gate structure includes a first work function layer over the first region and a first portion of the isolation region, and a second work function layer over the second region and a second portion of the isolation region. An interface where the first work function layer is in contact with the second work function layer is located over a top surface of the third fin.
    Type: Application
    Filed: January 14, 2022
    Publication date: July 21, 2022
    Inventors: Da HUANG, Yao Qi DONG, Xiaowan DAI, Zhen TIAN