Abstract: A lead-wire frame structure for packaging and a sensor package structure, which are applied to the field of sensor preparation. The lead-wire frame structure comprises: a bonding-pad component and a plurality of pin components, wherein the bonding-pad component is provided with an inward recess in a plane direction of a coplane which is formed by the bonding-pad component and the plurality of pin components. In the plane direction, arc-shaped packaging interfaces for offsetting stresses are formed in an aligned manner on an inner contour of the recess and an outer contour of the recess in the bonding-pad component. In the present application, the bonding-pad component is provided with the inward recess in the plane direction, and the aligned packaging interfaces of the inner contour of the recess and the outer contour of the recess arc designed to be of arc-shaped structures, which can offset internal and external stresses.

Abstract: A packaged chip and a current sensor, which are applied to the field of chip packaging. The packaged chip comprises: a substrate, a protective layer made of the same material as the substrate, and an active region prepared on one side surface of the substrate, wherein the side of the active region facing away from the substrate is bonded to the protective layer; and an isolation structure is formed between the protective layer and the substrate and on a side face of the active region. By means of the present application, the side, facing away from a substrate, of an active region prepared on the substrate is connected to a protective layer, and an isolation structure is formed between the protective layer and the substrate and on a side face of the active region, such that insulated isolation for the active region is formed.

Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.

Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively; first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.

Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.

Abstract: The invention discloses a fluxgate chip packaging structure thereof. The fluxgate chip packaging structure comprises a fluxgate bare chip, a conductive pin, and a packaging layer wrapping the fluxgate bare chip and a pin tail of the conductive pin; and the fluxgate bare chip is electrically connected to the pin tail. Based on the fluxgate bare chip, the fluxgate chip packaging structure forms a universal chip which can be applied to a fluxgate current sensor; during use, the fluxgate bare chip can be quickly connected to the fluxgate current sensor through the conductive pin, and the fluxgate chip packaging structure can be matched with the internal structure of existing fluxgate current sensors to realize magnetic field detection of sensors; and the fluxgate chip packaging structure can completely replace traditional enameled wire probes, thus greatly reducing the probe size.

Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.

Abstract: A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively, first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.

Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.

Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.

Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.

Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.

Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.

Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a single crystal mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.

Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.