Patents by Inventor Xiaowei HOU

Xiaowei HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230280376
    Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.
    Type: Application
    Filed: September 11, 2020
    Publication date: September 7, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Shengping ZHU, Po ZHANG, Peng WU
  • Publication number: 20230213598
    Abstract: A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.
    Type: Application
    Filed: July 15, 2020
    Publication date: July 6, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Juping LI, Po ZHANG, Peng WU
  • Publication number: 20230026496
    Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively, first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 26, 2023
    Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Junjie GUO, Juping LI, Po ZHANG
  • Publication number: 20220260652
    Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.
    Type: Application
    Filed: November 19, 2019
    Publication date: August 18, 2022
    Inventors: Juping LI, Liangguang ZHENG, Xiaowei HOU, Tao JIANG, Junjie GUO, Zhujian CHEN, Po ZHANG, Fangliang ZHU, Hang ZHAO
  • Patent number: 10739921
    Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: August 11, 2020
    Assignee: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTD
    Inventors: Hongyan Chen, Rongzhi Gu, Weiting Huang, Xiaowei Hou
  • Patent number: 10392691
    Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: August 27, 2019
    Assignee: NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY CO., LTD.
    Inventors: Xiaowei Hou, Junjie Guo, Dacheng Ni, Fei Wang, Huaxiong Zheng, Liangguang Zheng, Juping Li
  • Publication number: 20190095003
    Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.
    Type: Application
    Filed: July 27, 2018
    Publication date: March 28, 2019
    Applicant: NANCHAGN O-FILM DISPLAY TECHNOLOGY CO.,LTD
    Inventors: Hongyan CHEN, Rongzhi GU, Weiting HUANG, Xiaowei HOU
  • Patent number: 10173400
    Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: January 8, 2019
    Assignees: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTD., SHENZHEN O-FILM TECH. CO., LTD.
    Inventors: Shuang Du, Peihong Wang, Xiaowei Hou
  • Publication number: 20180245204
    Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a single crystal mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.
    Type: Application
    Filed: August 10, 2016
    Publication date: August 30, 2018
    Applicant: NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY CO., LTD.
    Inventors: Xiaowei HOU, Junjie GUO, Dacheng NI, Fei WANG, Huaxiong ZHENG, Liangguang ZHENG, Juping LI
  • Publication number: 20180170016
    Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.
    Type: Application
    Filed: June 29, 2017
    Publication date: June 21, 2018
    Applicants: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTD., SHENZHEN O-FILM TECH. CO., LTD.
    Inventors: Shuang DU, Peihong WANG, Xiaowei HOU