Abstract: The disclosure provides a displaying substrate, a manufacturing method thereof, and a display panel, and relates to the technical field of display. The displaying substrate comprises a first supporting base (1), plurality of vibrating element modules (2), and a display module (3). The display module (3) comprises display units (31), connecting units (32) and hollowed-out units (33). Each connecting unit (32) is located between two adjacent display units (31). Each hollowed-out unit (33) is located between two adjacent display units (31) except an area where the corresponding connecting unit (32) is located. The hollowed-out units (33) are provided with cavities (40) corresponding to the vibrating element modules (2). Orthographic projections of the hollowed-out units (33) on a reference plane cover orthographic projections of the vibrating element modules (2) on the reference plane. The vibrating element modules (2) and the cavities (40) form a transducer.

Abstract: An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.

Abstract: A unit configured as constituent part of a fuel cell for use in novel electrochemical hydrogen compressor material technology system includes a combination of a hydrocarbon auto-thermal reformer, a water-gas shift reactor, and at least two countercurrent flow heat recuperators at least one of which is downstream from both the reformer and reactor. Optionally, two of the at least two recuperators are separated by the reactor to generate H2 in addition to that already contained in reformate formed at the reformer. The unit may include a proton conducting membrane that includes an inorganic polymer with pores filled with an organic polymer, each of which is configured to operate individually within a wide range of temperatures with no added solvent.

Abstract: The present disclosure relates to a backlight module, a method for designing the same, and a display device. The backlight module includes: a first substrate; a plurality of LED chips on the first substrate; and a light control structure on the first substrate. The backlight module includes a plurality of light control region groups in one-to-one correspondence with the plurality of light-emitting diode chips, each light control region group includes at least a first light control region and a second light control region. The light control structure includes a plurality of light control substructure groups respectively located in the plurality of light control region groups. Each light control substructure group includes at least a first light control substructure in the first light control region and a second light control substructure in the second light control region.

Abstract: This disclosure relates to a see-through display device, including: a collimated light source assembly, configured to form collimated light and control a light emitting direction; a first light extraction layer, configured to extract, in a collimated manner, the light ray transmitted inside the light guide plate through a light extraction outlet; an extinction layer and a second light extraction layer, wherein the extinction layer includes a light guide region and a light absorption region which are arranged alternately, and the second light extraction layer includes multiple light extraction inlets; a reflecting layer, arranged on a side, close to the light guide plate, of the second light extraction layer and configured to reflect the collimated light extracted from the light extraction outlet to the light guide plate; and a liquid crystal dimming layer. This disclosure further relates to a manufacturing method of the see-through display device.

Abstract: A high anti-interference microsystem based on System In Package (SIP) for a power grid is provided. The high anti-interference microsystem comprises a ceramic cavity, a ceramic substrate, a magnetic cover plate, a digital signal processing circuit, an analog signal conditioning circuit and a shield, wherein the ceramic cavity supports the ceramic substrate, the magnetic cover plate is in sealed contact with the ceramic cavity, and the ceramic substrate is arranged in a cavity formed by the ceramic cavity and the magnetic cover plate; a sealed shell of the microsystem based on SIP is composed of the magnetic cover plate and the ceramic cavity; the digital signal processing circuit and the analog signal conditioning circuit are arranged on the ceramic substrate and respectively process received signals to be processed; the shield covers an outer side of the sealed shell and is used for shielding external magnetic field interference.

Abstract: An array substrate including a display area having a plurality of subpixels is provided. The plurality of subpixels includes a plurality of first subpixels in a display-bonding sub-area and a plurality of second subpixels in a regular display sub-area. The array substrate includes a plurality of thin film transistors on a first side of the base substrate and respectively in the plurality of subpixels. A respective one of the plurality of first subpixels includes a bonding pad on a second side of a base substrate; a lead line electrically connecting a respective one of a plurality of thin film transistors to the bonding pad; and a via extending through the base substrate. The lead line is unexposed in the array substrate. The lead line extends from the first side to the second side of the base substrate through the via, to connect to the bonding pad.

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Abstract: An electrosurgical hook electrode includes an intermediate portion (36), a hook portion (38) connected to the intermediate portion (36) at a bend angle, and a coating (40) disposed over the intermediate portion (36) and the hook portion (38), the coating (40) having a varying thickness.

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Abstract: An electrosurgical blade (900) configured to couple to an RF electrosurgical instrument (100). The electrosurgical blade (900) includes a proximal portion (900a) configured to couple to a blade receptacle (104) of an RF electrosurgical instrument (100), a coagulation section (920) extending distally from the proximal portion (900a), a blade edge (940) defined around a periphery of the electrosurgical blade (900), and a ramped surface (930) extending between the coagulation section (920) and the blade edge (940). The blade edge (940) includes a right-angled tip (944) and is defined by a first side (941) extending longitudinally, a second side (942) extending longitudinally and having a curved portion (942c), and a distal side (943) extending laterally.

Abstract: A speckle-suppressing lighting system includes an optical waveguide, a first solid-state light source, a second solid-state light source, and a diffuser. The optical waveguide has a proximal end and a distal end. At least part of the diffuser is between the proximal end and the distal end. The first solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a first light beam that propagates toward the distal end and has a first center wavelength. The second solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a second light beam that propagates toward the distal end and has a second center wavelength differing from the first center wavelength. The diffuser diffuses the first light beam and the second light beam.

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Abstract: Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.