Patents by Inventor XIAOXIONG LIN

XIAOXIONG LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • QUATERNARY VERTICAL LIGHT EMITTING DIODE WITH DOUBLE SURFACE ROUGHENING AND MANUFACTURING METHOD THEREOF
    Publication number: 20110278619
    Abstract: The present invention discloses a quaternary vertical light emitting diode with double surface roughening and a manufacturing method thereof, where a Bragg reflective layer is formed on a substrate; a first type of epitaxial layer is formed on the Bragg reflective layer; a light emitting layer is formed on the first type of epitaxial layer; a second type of epitaxial layer is formed on the light emitting layer; a first GaP window layer with small circular holes or in a mesh structure is formed on the second type of epitaxial layer; a second GaP window layer with small circular holes or in a mesh structure is formed on the first GaP window layer; a first electrode is formed on the top surface of the second GaP window layer; and a second electrode is formed on the bottom surface of the GaAs substrate.
    Type: Application
    Filed: May 13, 2011
    Publication date: November 17, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: XIAOXIONG LIN, CHIAHAO TSAI, SUHUI LIN, LINGFENG YIN, KECHUANG LIN