Abstract: A HARQ feedback method is provided and includes: configuring, by a base station, a first timing parameter for a user equipment (UE), wherein the first timing parameter is configured to indicate a time interval between a first time unit for the UE receiving a downlink transmission and a second time unit for the UE transmitting a HARQ feedback signal of the downlink transmission to the base station; determining, by the base station, that a collision occurs in an attempt to transmit the HARQ feedback signal by the UE; and transmitting, by the base station, downlink control information (DCI), which carries a second timing parameter, to the UE, wherein the second timing parameter is different from the first timing parameter and is configured to adjust the second time unit to avoid the collision. The present disclosure further provides SPS methods, related paging apparatuses and non-transitory storage mediums.

Abstract: A hybrid automatic repeat request (HARQ) transmission enhancement method includes receiving a downlink transmission sent by a base station, when an abnormal process is needed in sending of a HARQ feedback signal for the downlink transmission, determining whether the HARQ feedback signal satisfies a condition for postponing feedback, and if yes, selecting a physical uplink shared channel (PUSCH) after an originally scheduled sending time unit of the HARQ feedback signal to transmit at least part of the HARQ feedback signal.

Abstract: A sidelink prioritization method executable in a user equipment (UE) is disclosed. Upon receiving an initial priority value of a sidelink service, the UE determines a traffic type of the side link channel and generates a refined priority value of the sidelink service from the initial priority value according to the traffic type of the sidelink service.

Abstract: An intra-user equipment (UE) multiplexing method is executed in a UE. The UE obtains respective timeline conditions for multiplexing uplink transmission with high priority and uplink transmission with low priority when detecting collision in time between the uplink transmissions with different priorities. The UE performs multiplexing of the uplink transmissions with different priorities when the respective timeline conditions are satisfied.

Abstract: A method for handling high-priority uplink (UL) transmissions is provided. The method includes: obtaining an earliest one of the high-priority UL transmissions which is satisfied with a timeline condition; combining the earliest one of the high-priority UL transmissions with at least one of the high-priority UL transmissions which is satisfied with the timeline condition and later than the earliest one of the high-priority UL transmissions to form a multiplexing channel; and dropping one of the high-priority UL transmissions which is not satisfied with the timeline condition and the multiplexed high-priority UL transmission, wherein the multiplexed high-priority UL transmission is obtained by combining the earliest one of the high-priority UL transmissions with at least one of the high-priority UL transmissions later than the earliest one of the high-priority UL transmissions. A user equipment device is also provided.

Abstract: A HARQ feedback method is provided and includes: configuring, by a base station, a first timing parameter for a user equipment (UE), wherein the first timing parameter is configured to indicate a time interval between a first time unit for the UE receiving a downlink transmission and a second time unit for the UE transmitting a HARQ feedback signal of the downlink transmission to the base station; determining, by the base station, that a collision occurs in an attempt to transmit the HARQ feedback signal by the UE; and transmitting, by the base station, downlink control information (DCI), which carries a second timing parameter, to the UE, wherein the second timing parameter is different from the first timing parameter and is configured to adjust the second time unit to avoid the collision. The present disclosure further provides SPS methods, related paging apparatuses and non-transitory storage mediums.

Abstract: Disclosed are a data blind retransmission method and apparatus, a storage medium, and a terminal device. The method includes when a transmitting terminal is remote from a receiving terminal, starting a blind retransmission mechanism to retransmit data to be sent; during retransmission, updating a distance state between the transmitting terminal and the receiving terminal, and counting a number of retransmission times of the data to be sent; and controlling a retransmission of the data to be sent according to an updated distance state and the number of retransmission times.

Abstract: A data transmission method and device and a storage medium are provided. The method comprises: in a process of triggering a blind retransmission mechanism, obtaining retransmission times circularly (101); and when the retransmission times are less than a preset retransmission times threshold, retransmitting data to a receiving terminal and updating the retransmission times (102).

Abstract: A preparation method for a platform-shaped active region based P-I-N diode string in a reconfigurable loop antenna includes: (a) selecting an SOI substrate; (b) etching the SOI substrate to form a platform-shaped active region; (c) depositing a P-type Si material and an N-type Si material around the platform-shaped active region by an in-situ doping process to form a P region and an N region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming PADs by photolithography, to form the P-I-N diode string. Therefore, a high-performance platform-shaped active region based P-I-N diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process.

Abstract: A preparation method for a GaAs/Ge/GaAs heterogeneous SPiN diode for a loop antenna includes: selecting a GeOI substrate; etching a top Ge layer of the GeOI substrate to form first and second trenches in the top Ge layer; depositing a GaAs material in, the first and second trenches; performing P-type ion implantation into the GaAs material in the first trench to form a P-type active region and performing an N-type ion implantation into the GaAs material in the second trench to form an N-type active region by ion implantation process; and forming lead holes on surfaces of the P-type active region and the N-type active region and then sputtering a metal to form the GaAs/Ge/GaAs heterogeneous SPiN diode. Therefore, a high performance GaAs/Ge/GaAs heterogeneous SPiN diode suitable for forming a solid-state plasma antenna can be prepared by deep trench isolation technology and ion implantation process.

Abstract: A manufacturing method for an AlAs—Ge—AlAs structure based plasma p-i-n diode in a multilayered holographic antenna is provided. The manufacturing method includes: selecting a GeOI substrate and disposing an isolation region in the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing AlAs materials in the P-type trench and the N-type trench and performing ion implantation into the AlAs materials in the P-type trench and N-type trench to form a P-type active region and an N-type active region; and forming leads on surfaces of the P-type active region and the N-type active region to obtain the AlAs—Ge—AlAs structure based plasma p-i-n diode. Therefore, a high-performance Ge based plasma p-i-n diode suitable for forming a solid plasma antenna can be provided by using a deep trench isolation technology and an ion implantation process.

Abstract: A manufacturing method for an AlAs—Ge—AlAs structure based plasma p-i-n diode in a multilayered holographic antenna is provided. The manufacturing method includes: selecting a GeOI substrate and disposing an isolation region in the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing AlAs materials in the P-type trench and the N-type trench and performing, ion implantation into the AlAs materials in the P-type trench and N-type trench to form a P-type active region and an N-type active region; and forming leads on surfaces of the P-type active region and the N-type active region to obtain the AlAs—Ge—AlAs structure based plasma p-i-n diode. Therefore, a high-performance Ge based plasma p-i-n diode suitable for forming a solid plasma antenna can be provided by using a deep trench isolation technology and an ion implantation process.

Abstract: A preparation method for a platform-shaped active region based P-I-N diode string in a reconfigurable loop antenna includes: (a) selecting an SOI substrate; (b) etching the SOI substrate to form a platform-shaped active region; (c) depositing a P-type Si material and an N-type Si material around the platform-shaped active region by an in-situ doping process to form a P region and an N region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming PADs by photolithography, to form the P-I-N diode string. Therefore, a high-performance platform-shaped active region based P-I-N diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process.

Abstract: A preparation method for a GaAs/Ge/GaAs heterogeneous SPiN diode for a loop antenna includes: selecting a GeOI substrate; etching a top Ge layer of the GeOI substrate to form first and second trenches in the top Ge layer; depositing a GaAs material in, the first and second trenches; performing P-type ion implantation into the GaAs material in the first trench to form a P-type active region and performing an N-type ion implantation into the GaAs material in the second trench to form an N-type active region by ion implantation process; and forming lead holes on surfaces of the P-type active region and the N-type active region and then sputtering a metal to form the GaAs/Ge/GaAs heterogeneous SPiN diode. Therefore, a high performance GaAs/Ge/GaAs heterogeneous SPiN diode suitable for forming a solid-state plasma antenna can be prepared by deep trench isolation technology and ion implantation process.

Abstract: A method and apparatus for resource allocation to a LTE cell, a base station and a storage medium are provided. A resource allocation random factor M is generated for the LTE cell based on a cell ID of an LTE cell a resource allocation random number K is generated using the resource allocation random factor M, the generated resource allocation random number K being greater than or equal to 0 and being less than or equal to N1?N2, N1 being a total number N1 of PRBs corresponding to a system bandwidth of an LTE system, and N2 being a total number of PRBs needing to be scheduled to the LTE cell currently; a start position for allocating PRBs to the LTE cell is determined according to the resource allocation random number K; and PRBs are allocated to the LTE cell from the start position.