Patents by Inventor Xiaoyan PEI

Xiaoyan PEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10858359
    Abstract: Provided are certain novel pyrazine derivatives (I) as SHP2 inhibitors which is shown as formula (I), their synthesis and their use for treating a SHP2 mediated disorder. More particularly, provided are fused heterocyclic derivatives useful as inhibitors of SHP2, methods for producing such compounds and methods for treating a SHP2-mediated disorder.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: December 8, 2020
    Assignee: JACOBIO PHARMACEUTICALS CO., LTD.
    Inventors: Cunbo Ma, Panliang Gao, Jie Chu, Xinping Wu, Chunwei Wen, Di Kang, Jinlong Bai, Xiaoyan Pei
  • Publication number: 20190127378
    Abstract: Provided are certain novel pyrazine derivatives (I) as SHP2 inhibitors which is shown as formula (I), their synthesis and their use for treating a SHP2 mediated disorder. More particularly, provided are fused heterocyclic derivatives useful as inhibitors of SHP2, methods for producing such compounds and methods for treating a SHP2-mediated disorder.
    Type: Application
    Filed: June 7, 2017
    Publication date: May 2, 2019
    Inventors: Cunbo MA, Panliang GAO, Jie CHU, Xinping WU, Chunwei WEN, Di KANG, Jinlong BAI, Xiaoyan PEI
  • Publication number: 20180331235
    Abstract: A Schottky diode comprises: a semiconductor layer and a three-terminal port located on a side of the semiconductor layer; the three-terminal port comprises a first electrode, a second electrode, and a third electrode located between the first electrode and the second electrode, at least a part of the second electrode extends into the semiconductor layer and forms a Schottky contact with the semiconductor layer, the second electrode and the third electrode are electrically connected to form an anode of the Schottky diode, and the first electrode is in ohmic contact with the semiconductor layer as a cathode of the Schottky diode; when the Schottky diode is subjected to a reverse bias voltage, a depletion layer is formed under the third electrode.
    Type: Application
    Filed: May 10, 2018
    Publication date: November 15, 2018
    Inventors: Yi PEI, Xiaoyan PEI