Abstract: A primary side sensing power control system and method for constant current control that utilizes a relationship that involves the measured reset-time from the previous cycle to determine the primary side peak current and off-time for the next cycle. This control mechanism does not need the knowledge of input voltage or magnetizing inductance. Therefore, it removes the sensitivities of input voltage and magnetizing inductance to the output current limit. Furthermore, it uses a time measurement instead of a voltage measurement for the current calculation which in many cases is easier to perform.

Abstract: A primary side sensing power control system and method for constant current control that utilizes a relationship that involves the measured reset-time from the previous cycle to determine the primary side peak current and off-time for the next cycle. This control mechanism does not need the knowledge of input voltage or magnetizing inductance. Therefore, it removes the sensitivities of input voltage and magnetizing inductance to the output current limit. Furthermore, it uses a time measurement instead of a voltage measurement for the current calculation which in many cases is easier to perform.

Abstract: Isocyanates are produced by reacting an organic amine with phosgene in process which includes at least three stages. The first stage is carried out in a dynamic mixer. The second stage is carried out in at least one reactor. The third stage is carried out in at least one material separating apparatus. The pressure in the reactor of the second stage must be greater than or equal to the pressure in the dynamic mixer. The pressure in the third stage material separating apparatus must be lower than the pressure in the second stage reactor.

Abstract: A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.

Abstract: A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.