Abstract: The present invention relates to a photovoltaic module, comprising: a glass panel, a back panel, a cell string including a plurality of cells encapsulated between the glass panel and the back panel, and a film containing metal oxides and/or silicon oxides disposed between the glass panel and the cell string. The photovoltaic module can block the migration of alkali metal ions and achieve the PID resistance.

Abstract: A crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. The gallium oxide layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index.

Abstract: Embodiments of the present disclosure provide a solar cell and a manufacturing method thereof, a processing method of an n-type doped silicon film, and a semiconductor device. The manufacturing method of the solar cell includes: providing a silicon wafer; forming an n-type doped silicon film on a first main surface of the silicon wafer at a first temperature, and simultaneously forming the n-type doped silicon film on at least a portion of surfaces of the silicon wafer except the first main surface due to wrapping around; performing a heat treatment on the n-type doped silicon film at a second temperature; etching and removing the n-type doped silicon film on the surfaces of the silicon wafer except the first main surface after performing the heat treatment; and preparing the solar cell by using the silicon wafer, the first temperature is lower than the second temperature.

Abstract: The disclosure relates to a crystalline silicon solar cell and a preparation method, and a photovoltaic module, belonging to the technical field of solar cells. The crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell.