Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract: Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber dry clean after photomask plasma etching includes performing an in-situ pre-cleaning process in a plasma processing chamber, supplying a pre-cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber while performing the in-situ pre-cleaning process, providing a substrate into the plasma processing chamber, performing an etching process on the substrate, removing the substrate from the substrate, and performing an in-situ post cleaning process by flowing a post cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber.

Abstract: A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.

Abstract: Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O2 through the process chamber while the dummy substrate is disposed on the support pedestal.

Abstract: A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.

Abstract: A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.

Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.

Abstract: A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such that the protected and unprotected regions are defined. The unprotected regions are etched in a high temperature environment to form isolated magnetic regions.

Abstract: A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.

Abstract: A method for removal of residues after plasma etching a film stack comprising a first layer and a sacrificial layer. The method treats a substrate containing the film stack after the first layer of the film stack has been etched to remove residue produced during the etching process. The treatment is performed in a buffered oxide etch wet dip solution that removes the residue and the sacrificial layer.

Abstract: A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.

Abstract: A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.

Abstract: A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.

Abstract: A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing gas is disclosed. The method provides high etch selectivity for the magnetic materials over non-magnetic dielectric materials, such as aluminum oxide (Al2O3) and the like, as well as to photoresist.

Abstract: A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access memory (MRAM) device is disclosed. Each layer of the multi-layer magnetic stack is etched using a process sequence including a plasma etch step followed by a plasma treatment step. The plasma treatment step uses a plasma comprising an inert gas to remove residues formed during the plasma etch step.

Abstract: A method of etching metal layers (e.g., niobium (Nb), titanium (Ti), tantalum (Ta), and the like) using a gas mixture comprising a chlorine-containing gas and a fluorine-containing gas is disclosed. The method provides a high etch selectivity for the metal layers over photoresist.

Abstract: A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.