Patents by Inventor Xiaoyong Liu

Xiaoyong Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190279662
    Abstract: A magnetic recording write head includes a spin torque oscillator (STO) between the write pole and trailing shield and an extended seed layer on the write pole beneath the STO. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the extended seed layer and STO and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO the extended seed layer spreads the current to reduce heating of the write pole and STO and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.
    Type: Application
    Filed: May 29, 2017
    Publication date: September 12, 2019
    Inventors: Xiaoyong Liu, Quang Le, Hongquan Jiang, Guangli Liu, Jui-Lung Li
  • Patent number: 10410658
    Abstract: A magnetic recording write head includes a spin torque oscillator (STO) between the write pole and trailing shield and an extended seed layer on the write pole beneath the STO. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the extended seed layer and STO and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO the extended seed layer spreads the current to reduce heating of the write pole and STO and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.
    Type: Grant
    Filed: May 29, 2017
    Date of Patent: September 10, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Xiaoyong Liu, Quang Le, Hongquan Jiang, Guangli Liu, Jui-Lung Li
  • Publication number: 20190256493
    Abstract: A diphenylaminopyrimidine and triazine compound of Formula I, or a pharmaceutically acceptable salt, stereoisomer, hydrate or solvate thereof is disclosed In formula I, A is C or N; X and Y are independently selected from hydrogen, halo, cyano, trifluoromethyl, alkoxy, alkyl, aryl, alkenyl, alkynyl and nitro; or X and Y, together with the atoms to which they are attached, form a phenyl or an heteroaromatic ring; R1 is R2 is CD3 or CD2CD3; R3 is R4 is hydrogen, methyl, trifluoromethyl, cyano or halo; R5 is hydrogen, alkyl, substituted and unsubstituted phenyl, allyl or propargyl; R6 and R7 are independently selected from hydrogen, alkyl, substituted and unsubstituted phenyl, allyl and propargyl; or R6 and R7, together with the nitrogen atom to which they are attached, form a substituted or unsubstituted heterocycloalkyl group. The compound has pharmacodynamic and pharmacokinetic properties and ALK kinase inhibitory activity.
    Type: Application
    Filed: May 4, 2017
    Publication date: August 22, 2019
    Inventors: Jian HONG, Guobin LIU, Jingbing WANG, Xiaoyong LE
  • Patent number: 10388650
    Abstract: The disclosure belongs to the technical field of semiconductor power devices, specifically relates to a semi-floating-gate power device, and comprises the gallium nitride high-electron-mobility transistor, the diode and the capacitor; the anode of the diode is connected with the gate of the gallium nitride high-electron-mobility transistor and the cathode of the diode is connected with the source or the channel area of the gallium nitride high-electron-mobility transistor; one end of the capacitor is connected with the gate of the gallium nitride high-electron-mobility transistor and the other end of the capacitor is connected with the external voltage signal. The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the transistor can serve as the power switch tube better.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: August 20, 2019
    Assignee: FUDAN UNIVERSITY
    Inventors: Pengfei Wang, Xiaoyong Liu
  • Patent number: 10381032
    Abstract: Magnetic sensors with effectively shaped side shields and their fabrication processes are provided. One such sensor includes a substrate, a sensor stack disposed on the substrate and having a stripe height, where the sensor stack further includes a front edge disposed at an air bearing surface (ABS) of the magnetic sensor, a back edge opposite of the front edge, and two side edges, and a side shield adjacent to each of the two side edges of the sensor stack, each side shield having a side shield height defined as a distance from the ABS to a back edge of the side shields, where the side shield height is greater than the stripe height, and where substantially no residue from materials used to form the side shield are disposed at the back edge of the sensor stack.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: August 13, 2019
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Quang Le, Yongchul Ahn, Xiaoyong Liu, Jui-Lung Li, Hongquan Jiang
  • Publication number: 20190232248
    Abstract: A continuous chemical reactor may include a primary reaction unit and at least one secondary reaction unit. The primary reaction unit has a stirring device and a first temperature regulating device, and a feed inlet provided at an upper portion thereof. The secondary reaction unit is sleeved outside the primary reaction unit, and a reaction chamber is formed therebetween. By adding reaction materials to the primary reaction unit via the feed inlet and adjusting the temperature of the reaction materials by the first temperature regulating device, the reacted materials enter the reaction chamber, and the heat generated in the reaction chamber can be used to adjust the temperature of the materials in the primary reaction unit to more effectively use the heat, and the product after reaction can be discharged from a discharge hole at the lower end of the secondary reaction unit, thereby achieving continuous production.
    Type: Application
    Filed: October 30, 2017
    Publication date: August 1, 2019
    Inventors: Jianmin Hu, Peikun Wan, Jinzhe Hu, Yuntao Bai, Xiaoyong Liu, Shumin Hu
  • Patent number: 10364981
    Abstract: A method for decreasing nitrogen oxides of a pulverized coal boiler using burners of internal combustion type including during the operation of the boiler, ignition sources in the burners of internal combustion type mounted on side walls of the boiler are always in a working state, and igniting the pulverized coal in the burners in advance; decreasing secondary air amount in a primary combustion zone of the boiler so that the primary combustion zone is in a relatively strong reducing atmosphere and an oxygen-deficient condition for inhibiting generation of NOx is created; and supplying remaining air from an upper part of a furnace of the boiler in a form of over-fire air, so that a deep air staging is carried out in the total furnace. Thus, the NOx generation of combustion can be effectively controlled on the premise of not decreasing efficiency of the boiler.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: July 30, 2019
    Assignee: YANTAI LONGYUAN POWER TECHNOLOGY CO., LTD.
    Inventors: Yupeng Wang, Hong Tang, Yuwang Miao, Tao Niu, Huaijun Ma, Peng Liu, Xinguang Wang, Xiaoyong Zhang, Yubin Zhang, Chaoqun Zhang, Yongsheng Dong, Xingyuan Cui
  • Publication number: 20190221232
    Abstract: Magnetic sensors with effectively shaped side shields and their fabrication processes are provided. One such sensor includes a substrate, a sensor stack disposed on the substrate and having a stripe height, where the sensor stack further includes a front edge disposed at an air bearing surface (ABS) of the magnetic sensor, a back edge opposite of the front edge, and two side edges, and a side shield adjacent to each of the two side edges of the sensor stack, each side shield having a side shield height defined as a distance from the ABS to a back edge of the side shields, where the side shield height is greater than the stripe height, and where substantially no residue from materials used to form the side shield are disposed at the back edge of the sensor stack.
    Type: Application
    Filed: January 12, 2018
    Publication date: July 18, 2019
    Inventors: Quang Le, Yongchul Ahn, Xiaoyong Liu, Jui-Lung Li, Hongquan Jiang
  • Publication number: 20190190281
    Abstract: A charging circuit, a charging system, a charging method, and an electronic device is provided. In the charging circuit, a control signal transmitted by a controller is received, and then it is determined whether the control signal is a first control signal. If it is determined that the control signal is the first control signal, a first set of switches is turned on and a second set of switches is turned off to cause an adaptation module to charge a first capacitor, a second capacitor and a battery. If it is determined that the control signal is not the first control signal, the second set of switches is turned on and the first set of switches is turned off to cause the first capacitor and the second capacitor to charge the battery.
    Type: Application
    Filed: August 7, 2017
    Publication date: June 20, 2019
    Inventors: Changsong HUANG, Linfeng CHEN, Xiaoyong LIU
  • Publication number: 20190177372
    Abstract: Processes for preparing compounds of Formula (1) and Formula (2) are described, wherein X, Y, Z, R1-R7, L and n are defined herein. Intermediates useful in the preparation of the compounds of Formula (1) and Formula (2) are also described.
    Type: Application
    Filed: September 11, 2018
    Publication date: June 13, 2019
    Applicant: ONKURE, INC.
    Inventors: Anthony D. Piscopio, Xiaoyong Fu, Feng Shi, Huayan Liu, Zhifeng Li
  • Patent number: 10304963
    Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: May 28, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaoyong Lu, Dong Li, Zheng Liu, Shuai Zhang, Liang Sun, Chunping Long
  • Patent number: 10255400
    Abstract: Disclosed approaches for configuring a memory include generating by a high-level synthesis (HLS) tool executing on a computer system, a first mapping of elements of a high-level language (HLL) program to elements of a hardware language finite state machine that represents a circuit implementation of the HLL program. The HLS tool further generates a second mapping of lines of the HLL program to states of the hardware language finite state machine and stores the information describing the first mapping and the second mapping in a data structure of a database in the memory.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: April 9, 2019
    Assignee: XILINX, INC.
    Inventors: Jason Villarreal, Xiaoyong Liu, Kumar Deepak
  • Publication number: 20180358543
    Abstract: Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.
    Type: Application
    Filed: November 29, 2017
    Publication date: December 13, 2018
    Inventors: Quang Le, David John Seagle, Xiaoyong Liu, Daniele Mauri, Yongchul Ahn, Hongquan Jiang, Guangli Liu, David Patrick Druist, Jui-Lung Li
  • Patent number: 10093952
    Abstract: The present invention provides a method for preparing yeast beta-D-glucan using a solubilization technology based on molecular assembly, comprising the following steps: (1) micro-fluidizing an enzymatic hydrolysate of yeast cell walls at 70 to 200 MPa, and then centrifuging to obtain a precipitate; (2) resuspending the precipitate obtained in step (1) with a ionic liquid, then dispersing to obtain a solution; wherein the ionic liquid is 1-ethyl-3-methylimidazolium acetate or 1-allyl-3-methylimidazolium chloride; (3) centrifuging the solution obtained in step (2), and then adding ethanol, centrifuging and collecting a precipitate; (4) resuspending the precipitate obtained in step (3) with water, then centrifuging and collecting a supernatant. Preferably, the method further comprises (5): spray drying the supernatant obtained in step (4) to obtain a yeast beta-D-glucan powder.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: October 9, 2018
    Assignee: Institute of Agro-Products Processing Science and Technology, CAAS
    Inventors: Qiang Wang, Hongzhi Liu, Li Liu, Aimin Shi, Hui Hu, Yanan Li, Weijing Lin, Yuquan Duan, Jie Gao, Xiaoyong Liu
  • Patent number: 10024787
    Abstract: A method includes receiving a gas mixture at a first pressure including at least a primary gas and a secondary gas and changing a pressure of the received gas mixture from the first pressure to a second pressure. Further, the method includes determining a spectra of the gas mixture at the second pressure, wherein at least the first spectral line of the primary gas is spectrally distinguished from at least the second spectral line of the secondary gas, identifying a peak wavelength associated with the spectrally distinguished first spectral line of the primary gas based on at least two wavelengths of the secondary gas corresponding to at least two peak amplitudes in the spectra of the gas mixture, and determining a concentration of the primary gas based on the identified peak wavelength associated with the spectrally distinguished first spectral line of the primary gas.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: July 17, 2018
    Assignee: General Electric Company
    Inventors: Rachit Sharma, Chayan Mitra, Sandip Maity, Vinayak Tilak, Xiaoyong Liu, Anthony Kowal, Chong Tao
  • Patent number: 9947347
    Abstract: A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: April 17, 2018
    Assignee: Western Digital Technologies, Inc.
    Inventors: Petrus Antonius Van Der Heijden, Quang Le, Kuok San Ho, Xiaoyong Liu, Gonçalo Marcos Baião De Albuquerque
  • Publication number: 20170289087
    Abstract: Systems, methods and computer readable media for delivery of notifications to devices without appropriate applications installed are disclosed. In some implementations, the systems, methods and computer readable media can deliver a notification message and process a response via an alternate mode when an appropriate application is not installed.
    Type: Application
    Filed: November 14, 2013
    Publication date: October 5, 2017
    Applicant: Google Inc.
    Inventors: Austin N. Chang, Balaji Srinivasan, Ivan Lee, Joshua Oldmeadow, Thomas R. Karlo, Francesco Nerieri, Daniel R. Sandler, Somaskanda Thyagaraja, Xiaoyong Liu, Peter H. Williamson
  • Publication number: 20170179115
    Abstract: The disclosure belongs to the technical field of semiconductor power devices, specifically relates to a semi-floating-gate power device, and comprises the gallium nitride high-electron-mobility transistor, the diode and the capacitor; the anode of the diode is connected with the gate of the gallium nitride high-electron-mobility transistor and the cathode of the diode is connected with the source or the channel area of the gallium nitride high-electron-mobility transistor; one end of the capacitor is connected with the gate of the gallium nitride high-electron-mobility transistor and the other end of the capacitor is connected with the external voltage signal. The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the transistor can serve as the power switch tube better.
    Type: Application
    Filed: April 22, 2015
    Publication date: June 22, 2017
    Applicant: FUDAN UNIVERSITY
    Inventors: PENGFEI WANG, XIAOYONG LIU
  • Patent number: 9679591
    Abstract: A scissor type magnetic sensor for magnetic data recording having a flux closure magnetic side shield structure. The magnetic sensor has a magnetic side shield structure that includes a non-magnetic layer within a magnetic material layer, with the non-magnetic layer being removed from the sensor stack so as to define upper and lower magnetic portions of the magnetic structure that are separated from one another at a region away from the sensor stack. The upper and lower magnetic portions are connected with one another in a region near the sensor stack so as to magnetic flux closure structure. The novel magnetic side shield structure provides net neutral magnetization that does not provide an inadvertent biasing to the magnetic free layers of the magnetic sensor.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: June 13, 2017
    Assignee: HGST Netherlands B.V.
    Inventors: Wenqin Hao, Quang Le, Xiaoyong Liu, Suping Song, Lei Wang
  • Publication number: 20170154641
    Abstract: A scissor type magnetic sensor for magnetic data recording having a flux closure magnetic side shield structure. The magnetic sensor has a magnetic side shield structure that includes a non-magnetic layer within a magnetic material layer, with the non-magnetic layer being removed from the sensor stack so as to define upper and lower magnetic portions of the magnetic structure that are separated from one another at a region away from the sensor stack. The upper and lower magnetic portions are connected with one another in a region near the sensor stack so as to magnetic flux closure structure. The novel magnetic side shield structure provides net neutral magnetization that does not provide an inadvertent biasing to the magnetic free layers of the magnetic sensor.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Inventors: Wenqin Hao, Quang Le, Xiaoyong Liu, Suping Song, Lei Wang