Abstract: According to one embodiment, a magnetic sensor includes a lower scissor free layer, and an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the scissor free layers has a generally T-shaped periphery. According to another embodiment, a method includes forming a lower scissor free layer, and forming an upper scissor free layer above the lower scissor free layer in a track direction, where at least one of the one of the scissor free layers has a generally T-shaped periphery.

Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.

Abstract: In one embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and upper stabilization layers on opposite sides of the upper scissor free layer in a cross-track direction, where lower surfaces of the upper stabilization layers are above a plane extending along a top surface of the separation layer. In another embodiment, a magnetic sensor includes: a lower scissor free layer; an upper scissor free layer above the lower scissor free layer; a separation layer between the upper and lower scissor free layers; and lower stabilization layers on opposite sides of the lower scissor free layer in a cross-track direction, where upper surfaces of the lower stabilization layers are below a plane extending along a bottom surface of the separation layer.

Abstract: Provided are a platform authentication strategy management method for trusted connection architecture (TCA), and the trusted network connection (TNC) client, TNC access point and evaluation strategy service provider for implementing the method in the TCA. In the embodiments of the present invention, the platform authentication strategy for the access requester can be configured in the TNC access point or the evaluation strategy service provider, and the platform authentication strategy for the access requester configured in the evaluation strategy service provider can be delivered to the TNC access point. Moreover, a component-type-level convergence platform evaluation strategy can be executed in the TNC access point or the evaluation strategy service provider, to ensure that the realization of the TCA platform authentication has good application extensibility.

Abstract: The present disclosure relates to the technical field of radio frequency power devices, and more specifically, to a radio frequency power device for implementing the self-position alignment of asymmetric source, drain and gate and the production method thereof. In the radio frequency power device for implementing asymmetric self-alignment of the source, drain and gate according to the present disclosure, gate sidewalls are utilized to implement the self-position alignment of the source, drain and gate, thereby reducing parameter drift of products; besides, the source and drain of the device can be formed by the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing the parasitic source-drain resistances and enhancing the electrical properties of the radio is frequency power device.

Abstract: Embodiments disclosed herein generally relate to a magnetic head having a sensor stack and a bias material that is aligned in a direction perpendicular to a media facing surface. The sensor stack and a first portion of the bias material are laterally bookended by synthetic antiferromagnetic (SAF) structures, and a second portion of the bias material is laterally bookended by a dielectric material. In this configuration, the SAF structures are decoupled from the bias material, which minimizes the disturbance to the bias material.

Abstract: The present disclosure belongs to the technical field of radio frequency power devices, and more specifically, to a high electron mobility device based on the gate-first process and the production method thereof. The high electro mobility device is made by adopting the gate-first process according to the present disclosure, wherein gate dielectric sidewalls are utilized to implement the self-alignment of the gate and source; besides, the source and drain of the device can be formed directly by use of the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing parameter shift of products and enhancing the electrical properties of high electron mobility devices.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: A magnetic read sensor having a magnetic seed layer, a pinned layer structure formed over the magnetic seed layer, a non-magnetic barrier or spacer layer formed over the pinned layer structure and a magnetic free layer structure formed over the non-magnetic barrier or spacer layer. The pinned layer has a stripe height (measured from the media facing surface) that is greater than a stripe height of the magnetic free layer structure. In addition, the magnetic seed layer structure has a stripe height (also measured from the media facing surface) that is greater than the stripe height of the magnetic pinned layer structure and the magnetic free layer structure. The stripe height of the magnetic seed layer structure can be controlled independently of the stripe heights of the magnetic pinned layer structure and the magnetic free layer structure.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: A computer-implemented method for delaying synchronization of a computing device is disclosed according to one aspect of the subject technology. The method comprises receiving an update notification at the computing device, determining whether the computing device is idle, and, if the computing device is idle, then delaying retrieval of synchronization information corresponding to the update notification. The method also comprises determining whether a user has started using the computing device, and, if the user has started using the computing device, then retrieving the synchronization information corresponding to the update notification.

Abstract: Computer-implemented methods for synchronizing data between a server and a client are provided. In one aspect, a method includes receiving a request from a client to synchronize data. The request includes a synchronization token that includes client recent synchronization signatures, each client recent synchronization signature representing a state of data synchronization on the client for a certain time period. The method also includes comparing each client recent synchronization signature with a corresponding server recent synchronization signature representing data on a server for the same time period. When the comparison indicates that the data on the client for the time period represented by the client recent synchronization signature is not synchronized with corresponding data on the server for the time period, then the method includes sending the data on the server for the time period to the client. Systems and machine-readable media are also provided.

Abstract: This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing.

Abstract: This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate is of n-type and the device is of a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate, and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The method features capacity of manufacturing gate-control diode devices able to reduce chip power consumption through the advantages of high driving current and small sub-threshold swing. The present invention using a low temperature process production is especially applicable to the manufacturing of semiconductor devices based on flexible substrates and reading & writing devices that have a flat panel display and phase change memory.

Abstract: This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing.

Abstract: Provided are a platform authentication strategy management method for trusted connection architecture (TCA), and the trusted network connection (TNC) client, TNC access point and evaluation strategy service provider for implementing the method in the TCA. In the embodiments of the present invention, the platform authentication strategy for the access requester can be configured in the TNC access point or the evaluation strategy service provider, and the platform authentication strategy for the access requester configured in the evaluation strategy service provider can be delivered to the TNC access point. Moreover, a component-type-level convergence platform evaluation strategy can be executed in the TNC access point or the evaluation strategy service provider, to ensure that the realization of the TCA platform authentication has good application extensibility.

Abstract: The present invention involves an intelligent cooking method, especially a cooking method defined as oil stir-fry in Chinese cuisine. The present cooking method is comprised of the following steps: feeding heat transfer medium, feeding cooking materials, dispersing and/or turning-over cooking materials, separating cooking materials from oil, re-feeding cooking materials, stir-frying and/or turning-over cooking materials, etc. The method can perform intelligent cooking and can accurately control the duration and degree of heating to achieve the effect of stir-fry which is one of main cuisine techniques.

Abstract: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Abstract: Several methods of calibrating a wavelength-modulation spectroscopy apparatus configured to measure a concentration of an analyte in a sample gas are disclosed. Each of the methods allows for calibration and recalibration using a relatively safe gas regardless of whether the sample gas for which the concentration of the analyte can be determined is a hazardous gas. In one embodiment of the invention, calibration that is sample-gas specific is accomplished by determining a first slope coefficient and calibration function for the sample gas, after which a scaling factor can be determined based on the first slope coefficient and a second slope coefficient for the same or a different sample gas and used in a subsequent calibration (or recalibration) to scale the calibration function. In other embodiments of the invention, calibration that is not sample-gas specific is accomplished to allow for the determination of the analyte concentration in variable gas compositions and constant gas compositions.