Abstract: A decoder resource allocating method includes: recording a total resource occupied percentage of each decoder occupied by video which are playing; acquiring a decoder selecting method, a decoding type, and a required decoder resource of a current path video; and looking up a decoder performance parameter table according to the total resource occupied percentage of each decoder, the decoder selecting method, the decoding type, and the required decoder resource to select a suitable decoder resource. A corresponding decoder resource allocating apparatus is also provided. The present invention can flexibly select a decoder according to the play requirement and the available resource of the decoders to secure the success rate of playing and implement multi-path play for signal decoder to elevate the resource utilizing rate of the decoder and lower the manufacturing cost.

Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The manufacturing method of the array substrate comprises: forming a first conductive thin film (100) on a base substrate (1); and patterning the first conductive thin film (100), to form a pattern of a cathode (11) on a first region (11) of the base substrate (1), and form a pattern of a gate electrode (4) on a second region (12) of the base substrate (1). Complexity and process time of a fabrication process of an array substrate can be reduced, a fabrication process of an organic electroluminescent panel can be simplified, and production cost can be reduced, by forming a cathode layer of a light-emitting diode and a gate electrode layer of a thin film transistor in different regions of the base substrate at the same time by one patterning process.

Abstract: The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal.

Abstract: A display panel which includes a display area and a peripheral area around the display area is provided. The peripheral area includes an electroluminescent layer test region, a TFT test region and a plurality of lead-out lines. The electroluminescent layer test region includes a plurality of thin film transistors having electroluminescent layers, a first test line connecting sources of the plurality of thin film transistors having electroluminescent layers, and a switch lead and a second test line connecting gates of the plurality of thin film transistors having electroluminescent layers. The TFT test region includes a plurality of thin film transistors. Each of the plurality of lead-out lines is used for connecting a source-drain metal layer of one thin film transistor in the electroluminescent layer test region and a source-drain metal layer of one thin film transistor in the TFT test region.

Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.

Abstract: Methods and systems are provided for starting a vehicle engine. In one example, an engine starter system for starting the vehicle engine may comprise a ring gear coupled to an engine crankshaft, and a pinion gear coupled to a starter motor, the pinion gear having rotatable rocker elements for engaging the ring gear. In this way, the pinion gear may be engaged with the ring gear to transmit torque from the starter motor to the engine crankshaft to quickly start the engine.

Abstract: The present disclosure provides a thin film transistor, a thin film transistor array substrate, and a display apparatus, and their fabrication methods. The thin film transistor is formed by forming a source and drain electrode structure. To form the source and drain electrode structure, at least one metal film is formed using a target of a metal element in a sputtering chamber. A gas is introduced in the sputtering chamber to in-situ react with the metal element to form an anti-reflection layer over the at least one metal film.

Abstract: A polycrystalline silicon thin-film transistor includes a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.

Abstract: Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.

Abstract: A substrate heating device and substrate heating method is disclosed. The device comprises: a heating layer for transferring heat; a transfer pipe for transferring a gas to a diffusion layer; the diffusion layer for enabling the gas to be uniformly distributed between a conducting layer and the heating layer; and the conducting layer for conducting the gas in the diffusion layer to below a substrate to be heated. The device can uniformly and fully heat the substrate to be heated, thus enabling the to-be-heated substrate to have a more uniform surface temperature, and achieving a better effect in an etching, deposition and/or sputtering process of the substrate to be heated.

Abstract: Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

Abstract: A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active layer (3), a gate insulation layer (4), a gate electrode (5) and an interlayer insulation layer (6) on a base substrate (1); S2: forming a first metal thin film layer (8); S3: performing a hydrogenation treatment on the active layer (3) and the gate insulation layer (6); S4: forming a second metal thin film layer (7), the second metal thin film layer (7) being used for forming a source electrode and a drain electrode.

Abstract: The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.

Abstract: In accordance with various embodiments of the disclosed subject matter, a method for forming polycrystalline silicon thin film, a related optical film, a related polycrystalline silicon thin film, and a related thin film transistor are provided. In some embodiments, the method comprises: providing an amorphous silicon thin film; and performing a laser annealing process to convert the amorphous silicon thin film into a polycrystalline silicon thin film through generating a laser irradiation having a spatially periodic intensity distribution to irradiate the amorphous silicon thin film; wherein the spatially periodic intensity distribution comprises: a first laser intensity to form a plurality of crystal nuclei regions arranged in an array, and a second laser intensity to form a plurality of epitaxial growth regions, the second laser intensity being greater than the first laser intensity.

Abstract: A display panel comprises a display area and a peripheral area around the display area. The peripheral area comprises: an electroluminescent layer test region, a TFT test region and a plurality of lead-out lines. The electroluminescent layer test region comprises a plurality of thin film transistors having electroluminescent layers, a first test line connecting sources of the plurality of thin film transistors having electroluminescent layers, and a switch lead and a second test line connecting gates of the plurality of thin film transistors having electroluminescent layers. The TFT test region comprises a plurality of thin film transistors. Each of the plurality of lead-out lines is used for connecting a source-drain metal layer of one thin film transistor in the electroluminescent layer test region and a source-drain metal layer of one thin film transistor in the TFT test region.

Abstract: The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal.

Abstract: The exemplary embodiment of the present invention discloses a vehicle-mounted projection method and system. The vehicle-mounted projection system comprises: a transmission module, a processing module and laser display means, wherein the transmission module is used for receiving navigation data; the processing module is used for processing the navigation data to obtain a navigation image; and the laser display means is used for projecting the navigation image onto a specified position on the road surface in front of a vehicle. The vehicle-mounted projection method comprises: receiving navigation data; processing the navigation data to obtain a navigation image; projecting the navigation image onto a specified position on the road surface in front of the vehicle. According to the exemplary embodiment of the present invention, the navigation image of the vehicle is projected onto the road surface in front of the vehicle, thereby improving visibility and ensuring the projection effect.

Abstract: A method for fabricating a Polysilicon Thin-Film Transistor is provided. The method includes forming a polysilicon active layer, forming a first gate insulation layer and a first gate electrode sequentially on the active layer, conducting a first ion implantation process on the active layer by using the first gate electrode as a mask to form two doped regions at ends of the active layer, forming a second gate insulation layer and a second gate electrode sequentially on the first gate insulation layer and the first gate electrode, and conducting a second ion implantation process on the active layer by using the second gate electrode as another mask to form two source/drain implantation regions at two outer sides of the doped regions of the active layer. Accordingly, impurity concentration of the two doped regions is smaller than that of the two source/drain implantation regions.

Abstract: The disclosure provides a polycrystalline silicon thin-film transistor and a method for manufacturing the same as well as a display device. The polycrystalline silicon thin-film transistor comprises: a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same provided by the disclosure, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.