Patents by Inventor Xiaoyu Xu
Xiaoyu Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250069905Abstract: Disclosed in the present invention is a multi-wafer scrubbing device, comprising a box body. Multiple compartments are provided in the box body; the bottoms of the multiple compartments are connected; a support wheel system and a scrubbing system are provided inside each compartment; the scrubbing system comprises a group of roller brush units; the roller brush units can get close to each other to scrub wafers or away from each other to take out the wafers; multiple scrubbing systems are connected by means of an opening and closing drive mechanism; the opening and closing drive mechanism is used for simultaneously driving multiple groups of roller brush units to get close to or away from each other.Type: ApplicationFiled: November 9, 2022Publication date: February 27, 2025Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INCInventors: Qi YIN, Xiaoyu XU
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Patent number: 12229947Abstract: An optical coherence tomography (OCT) unit provides a mechanism/method for automatic artery and vein identification. The method may be embodied by specialized algorithm or by a machine learning model, such as a support vector machine or neural network. The present method may identify a vascular configuration that forms a vortex structure in the deep capillary plexus (DCP) of an OCT-based (e.g., OCTA) image of a retina. The identified vortex may then be designated a vein, and other vascular structures from other plexuses, such as from the superficial vascular plexus (SVP), that connect to the identified vortex structure are likewise designated veins. Additional criteria, some based on the vein designations, may be used to identify arteries.Type: GrantFiled: May 28, 2020Date of Patent: February 18, 2025Assignee: Carl Zeiss Meditec Inc.Inventors: Kenneth Bailey Freund, Xiaoyu Xu, Mary K. Durbin
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Publication number: 20250054671Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.Type: ApplicationFiled: October 31, 2024Publication date: February 13, 2025Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Xiaoyong LIU, Michael A. GRIBELYUK, Xiaoyu XU, Randy G. SIMMONS, Kuok San HO, Hisashi TAKANO
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Publication number: 20250054781Abstract: An array-type megasonic cleaning device for cleaning wafers (5), comprising: a cleaning tank (3); and a first driving shaft (1) and a second driving shaft (2) that are arranged in parallel with each other in the cleaning tank (3), and have an axial length of 60-350 mm, wherein at least two first clamping grooves (11) are formed on the first driving shaft (1) in a length direction, at least two second clamping grooves (21) are formed on the second driving shaft (2) in a length direction, and the second clamping grooves (21) are arranged corresponding to the first clamping grooves (11); the plurality of wafers (5) are respectively placed by means of the cooperation between the first clamping grooves (11) and the second clamping grooves (21); and the first driving shaft (1) and the second driving shaft (2) rotate in the same directionType: ApplicationFiled: November 9, 2022Publication date: February 13, 2025Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INCInventors: Xiaoyu XU, Yuansi YANG
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Publication number: 20250018527Abstract: The invention discloses a wafer polishing system, which comprises polishing units. The polishing unit comprises a wafer transfer channel and polishing modules. The polishing module comprises a polishing platform and a polishing arm, and the polishing arm can drive wafers to move relative to the polishing platform. The wafer transfer channel is provided with at least two working positions, and a load port can move between the working positions. A delivery structure is arranged between adjacent polishing units, which transfers wafers between working positions of the adjacent polishing units along a first trajectory, and the first trajectory falls on the wafer transfer channel. The invention further discloses a wafer transfer method. The trajectories of this invention all fall within the wafer transfer channel, without occupying any additional space, thereby ensuring a reasonable layout. The process is flexible and highly efficient, and transfer stability is high.Type: ApplicationFiled: December 30, 2022Publication date: January 16, 2025Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INC.Inventors: Xiaoyu XU, Yaomin DENG
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Publication number: 20250014618Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.Type: ApplicationFiled: September 19, 2024Publication date: January 9, 2025Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Randy G. SIMMONS, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO, Michael A. GRIBELYUK, Xiaoyu XU
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Publication number: 20250014151Abstract: A method of enhancing an abnormal area of a ground-penetrating radar image based on hybrid-supervised learning includes the steps of: building a database including a real image set, a simulation image set and a simulation image label set; adopting a generative adversarial network; processing semi-supervised training and unsupervised training alternately to obtain a trained model, then inputting a real radar image with abnormal area that needs to be enhanced into the model and processing through the generative network to output an abnormal-area-enhanced image.Type: ApplicationFiled: July 3, 2024Publication date: January 9, 2025Inventors: Guangle YAO, Honghui WANG, Wenlong ZHOU, Wei ZENG, Chen WANG, Ruijia LI, Xiaoyu XU, Jun LI, Siyuan SUN
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Publication number: 20250000809Abstract: According to an example aspect of the present invention, there are provided biomolecules encapsulated with Metal Organic Frameworks (MOFs) for use in intracellular delivery and controlled release of the biomolecules within cells, in vitro and in vivo. The invention also discloses the use of MOFs in combination with biomolecules for gene editing, cancer therapy and vaccine development.Type: ApplicationFiled: August 16, 2022Publication date: January 2, 2025Inventors: Hongbo Zhang, Chang Liu, Xiaoyu Xu
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Patent number: 12176132Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.Type: GrantFiled: June 30, 2022Date of Patent: December 24, 2024Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Brian R. York, Cherngye Hwang, Xiaoyong Liu, Michael A. Gribelyuk, Xiaoyu Xu, Randy G. Simmons, Kuok San Ho, Hisashi Takano
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Patent number: 12175633Abstract: A method of enhancing an abnormal area of a ground-penetrating radar image based on hybrid-supervised learning includes the steps of: building a database including a real image set, a simulation image set and a simulation image label set; adopting a generative adversarial network; processing semi-supervised training and unsupervised training alternately to obtain a trained model, then inputting a real radar image with abnormal area that needs to be enhanced into the model and processing through the generative network to output an abnormal-area-enhanced image.Type: GrantFiled: July 3, 2024Date of Patent: December 24, 2024Inventors: Guangle Yao, Honghui Wang, Wenlong Zhou, Wei Zeng, Chen Wang, Ruijia Li, Xiaoyu Xu, Jun Li, Siyuan Sun
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Publication number: 20240367283Abstract: Disclosed in the present invention is a wafer polishing system, comprising at least a polishing unit, which comprises a fixed working station and at least two polishing modules, wherein the polishing modules are located on two sides of the fixed working station; each polishing module comprises a polishing platform and a polishing arm, which can drive a wafer to move relative to the polishing platform, so as to implement a polishing process; the polishing arms of the polishing modules on the two sides are located in a diagonal direction of the fixed working station; and the polishing arms can respectively swing between the fixed working station and the polishing platforms to transfer the wafer, and movement regions of the polishing arms having an overlapping portion.Type: ApplicationFiled: August 30, 2022Publication date: November 7, 2024Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INC.Inventor: Xiaoyu XU
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Patent number: 12125512Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.Type: GrantFiled: June 30, 2022Date of Patent: October 22, 2024Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Cherngye Hwang, Brian R. York, Randy G. Simmons, Xiaoyong Liu, Kuok San Ho, Hisashi Takano, Michael A. Gribelyuk, Xiaoyu Xu
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Patent number: 12106791Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GeXNiFe layers, where at least one GeXNiFe layer is disposed in contact with the BiSb layer. The GeXNiFe layer has a thickness less than or equal to about 15 ? when used as an interlayer on top of the BiSb layer or less than or equal to 40 ? when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GeXNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GeXNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GeXNiFe layer allows the crystal orientation of the BiSb layer to be selected.Type: GrantFiled: June 30, 2022Date of Patent: October 1, 2024Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Brian R. York, Cherngye Hwang, Xiaoyong Liu, Michael A. Gribelyuk, Xiaoyu Xu, Susumu Okamura, Kuok San Ho, Hisashi Takano, Randy G. Simmons
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Publication number: 20240262892Abstract: Provided are novel neutralizing antibodies against spike protein of SARS-COV-2, and the antigen binding fragments thereof. Pharmaceutical composition and kits comprising the same, and the uses thereof are also provided.Type: ApplicationFiled: September 14, 2021Publication date: August 8, 2024Inventors: Lin CAO, Bai LU, Yang DOU, Jianfeng PAN, Lingjie XU, Xiaoyu XU
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Publication number: 20240208000Abstract: The invention discloses a device for calibrating working positions of a polishing head and a transfer station, comprising: a transfer station capable of reciprocating along a linear trajectory; a polishing head capable of rotating in a circumferential direction, with a rotational trajectory intersecting with the linear trajectory at least once; a sensor assembly used for monitoring the change of a distance between an outer edge of the polishing head and a sensor, comprising the sensor, and capable of measuring the distance at least at two radial ends of the transfer station; and a determining unit used for outputting a minimum linear distance between the outer edge of the polishing head and the sensor monitored by the sensor assembly to determine whether central axes of the polishing head and the transfer station coincide. The invention also discloses a method for calibrating working positions of a polishing head and a transfer station.Type: ApplicationFiled: October 14, 2022Publication date: June 27, 2024Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INC.Inventors: Xiaoyu XU, Gaoxiang ZHOU, Ningyuan Cai
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Publication number: 20240145279Abstract: The invention discloses a wafer position detection device comprising a mounting base, a trigger component and a fluid pressure detection component; the trigger component arranged on the mounting base comprises a top cover protruding from a surface of the mounting base, and a fluid delivery pipeline formed in an inner wall of the top cover; when a wafer is arranged on the top cover, the top cover moves in the direction close to the fluid delivery pipeline to block a fluid delivery port of the fluid delivery pipeline; when no wafer is arranged on the top cover, the top cover moves in the direction away from the fluid delivery pipeline under fluid pressure to open the fluid delivery port of the fluid delivery pipeline; the fluid pressure detection component makes indirect contact with the wafer through the top cover to indirectly detect the position of the wafer.Type: ApplicationFiled: October 20, 2021Publication date: May 2, 2024Applicant: HANGZHOU SIZONE ELECTRONIC TECHNOLOGY INC.Inventor: Xiaoyu XU
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Publication number: 20240032437Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.Type: ApplicationFiled: May 15, 2023Publication date: January 25, 2024Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Xiaoyong LIU, Susumu OKAMURA, Michael A. GRIBELYUK, Xiaoyu XU, Randy G. SIMMONS, Kuok San HO, Hisashi TAKANO
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Patent number: 11875827Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.Type: GrantFiled: March 25, 2022Date of Patent: January 16, 2024Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Brian R. York, Xiaoyong Liu, Son T. Le, Cherngye Hwang, Michael A. Gribelyuk, Xiaoyu Xu, Kuok San Ho, Hisashi Takano, Julian Sasaki, Huy H. Ho, Khang H. D. Nguyen, Nam Hai Pham
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Publication number: 20240006109Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.Type: ApplicationFiled: June 30, 2022Publication date: January 4, 2024Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Xiaoyong LIU, Michael A. GRIBELYUK, Xiaoyu XU, Randy G. SIMMONS, Kuok San HO, Hisashi TAKANO
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Publication number: 20240005973Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 ? when used as an interlayer on top of the BiSb layer or less than or equal to 40 ? when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.Type: ApplicationFiled: June 30, 2022Publication date: January 4, 2024Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Xiaoyong LIU, Michael A. GRIBELYUK, Xiaoyu XU, Susumu OKAMURA, Kuok San HO, Hisashi TAKANO, Randy G. SIMMONS