Abstract: A resistive touch screen controller provides two-finger gesture recognition. Current mirror circuitry, coupled to the XP/XN and YP/YN conductors, generates a screen current IL corresponding to X/y plate currents, and a corresponding mirror current IL/N. A variable resistor receives mirror current IL/N, and a resistance controller sets the resistance value R1 of the variable resistor, and monitors a variable resistor voltage VR1 based on IL/N*R1. A processor determines calibration voltages for the X and Y plates corresponding to the mirror current IL/N for X/Y voltage values of VR1 for a no touch condition, and X/Y offset voltages VOFS and HOFS of VR1 for a two touch condition. For a two touch condition, the processor determines touch resistance relative to no touch, and generates an adjusted X/Y plate resistance ?X/?Y based on VOFS/HOFS, and based on X/Y, determines a distance and angle between the two touches.

Abstract: The disclosure provides measuring a current on a top and bottom touch screen, wherein the top touch screen is not being touched; measuring a current on a top and bottom touch screen, wherein the top touch screen is not being touched by one finger; measuring a current on a top and bottom touch screen, wherein the top touch screen is not being touched by two fingers; calculating a one a two finger threshold on a plurality of touch screens, wherein, if the touch is a two finger touch: calculating an orientation of the two finger touch; and calculating a change of position of at least one finger of the two finger touch, wherein the processor employs a deriviative of the change of current on at lest one of the plates over time to determine a characteristic of the position.

Abstract: Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.

Abstract: Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.