Abstract: The invention relates to a real-time object detection and 3D localization method based on a single frame image. Comprising following steps: S1: inputting a 2D RGB image; S2: performing feature extraction on the 2D RGB image, extracting features of a deep network and a shallow network respectively; S3: carrying out 2D object detection and applying to subsequent modules; S4: estimating vertices, instance-level depth and center point of a 3D-box respectively; S5: adding a regularization term for maintaining horizontal locality into prediction of center point of a 3D-box to constrain and optimize the prediction of center point of the 3D-box; and S6: outputting a 2D RGB image with a 3D-box tag in combination with predictions of all modules. The invention increases the speed of model training convergence and the accuracy of 3D object detection and localization, and meets the accuracy requirements of an Advanced Driver Assistant System (ADAS) with a low hardware cost.

Abstract: The invention relates to a real-time object detection and 3D localization method based on a single frame image. Comprising following steps: S1: inputting a 2D RGB image; S2: performing feature extraction on the 2D RGB image, extracting features of a deep network and a shallow network respectively; S3: carrying out 2D object detection and applying to subsequent modules; S4: estimating vertices, instance-level depth and center point of a 3D-box respectively; S5: adding a regularization term for maintaining horizontal locality into prediction of center point of a 3D-box to constrain and optimize the prediction of center point of the 3D-box; and S6: outputting a 2D RGB image with a 3D-box tag in combination with predictions of all modules. The invention increases the speed of model training convergence and the accuracy of 3D object detection and localization, and meets the accuracy requirements of an Advanced Driver Assistant System (ADAS) with a low hardware cost.

Abstract: The present disclosure relates to a high-speed superjunction lateral insulated gate bipolar transistor, and belongs to the technical field of semiconductor power devices. Fast turn-off can be achieved by replacing the lightly doped substrate of the existing bulk silicon superjunction lateral insulated gate bipolar transistor with heavily doped substrate, breakdown voltage of the device is ensured by reasonably setting the total number of impurities in each drift region of the over junction-sustaining voltage layer, and further application thereof in integrated circuits is realized by providing the semiconductor second substrate region and the semiconductor isolation region. A high speed superjunction laterally insulated gate bipolar transistor according to the present disclosure solves the contradiction between cost of the superjunction laterally insulated gate bipolar transistor and achievement of fast turn-off on a bulk silicon substrate.

Abstract: The present disclosure relates to a high-speed superjunction lateral insulated gate bipolar transistor, and belongs to the technical field of semiconductor power devices. Fast turn-off can be achieved by replacing the lightly doped substrate of the existing bulk silicon superjunction lateral insulated gate bipolar transistor with heavily doped substrate, breakdown voltage of the device is ensured by reasonably setting the total number of impurities in each drift region of the over junction-sustaining voltage layer, and further application thereof in integrated circuits is realized by providing the semiconductor second substrate region and the semiconductor isolation region. A high speed superjunction laterally insulated gate bipolar transistor according to the present disclosure solves the contradiction between cost of the superjunction laterally insulated gate bipolar transistor and achievement of fast turn-off on a bulk silicon substrate.