Patents by Inventor Xiesen Yang

Xiesen Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTIVE SWITCHING DEVICES
    Publication number: 20220320431
    Abstract: Two-terminal resistive switching devices can have a switching layer in which a filament forms and deforms to varying degrees to represent distinct logical states. This switching layer can be formed having a varying ratio, X, of nitrogen to silicon at various strata of the switching layer. Such can result in a two-terminal memory device with improved stability and other characteristics.
    Type: Application
    Filed: March 31, 2021
    Publication date: October 6, 2022
    Inventors: Sundar Narayanan, Yunyu Wang, Zhen Gu, Wee Chen Gan, Wei Ti Lee, Xiesen Yang
  • Gas mixing method realized by back diffusion in a PECVD system with showerhead
    Patent number: 8026157
    Abstract: Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: September 27, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Xiesen Yang, Yong-Kee Chae, Shuran Sheng, Liwei Li
  • GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD
    Publication number: 20110053356
    Abstract: Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.
    Type: Application
    Filed: September 2, 2009
    Publication date: March 3, 2011
    Applicant: APPLIED MATERIALS,INC.
    Inventors: Xiesen Yang, Yong-Kee Chae, Shuran Sheng, Liwei Li