Patents by Inventor Xifeng Gao

Xifeng Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150349017
    Abstract: A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
    Type: Application
    Filed: September 18, 2014
    Publication date: December 3, 2015
    Inventors: Jiaming Xing, Jing Ye, Xifeng Gao, Zhetian Shi
  • Patent number: 9202841
    Abstract: A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: December 1, 2015
    Assignee: OMNIVISION TECHNOLOGIES (SHANGHAI) CO., LTD.
    Inventors: Jiaming Xing, Jing Ye, Xifeng Gao, Zhetian Shi
  • Publication number: 20150287632
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate having a device function layer formed thereon; forming a first opening in the device function layer, the first opening extending through the device function layer and having a side-to-bottom angle of smaller than 90°; and etching the substrate to form therein a second opening by using the device function layer as a mask and the first opening as a mask pattern. A method of fabricating a stacked chip is also disclosed, in which a second opening is formed in the same manner as the fabrication method of the semiconductor device. The fabrication methods are capable of simplifying semiconductor fabrication processes, increasing the throughput of a semiconductor fabrication plant and reducing fabrication cost.
    Type: Application
    Filed: April 30, 2014
    Publication date: October 8, 2015
    Applicant: OmniVision Technologies (Shanghai) Co., Ltd.
    Inventors: Xifeng Gao, Jing Ye