Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

Abstract: A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A semiconductor package includes a metal flange having a lower surface and an upper surface opposite the lower surface. An electrically insulating window frame is disposed on the upper surface of the flange. The electrically insulating window frame forms a ring around a periphery of the metal flange so as to expose the upper surface of the metal flange in a central die attach region. A first electrically conductive lead is disposed on the electrically insulating window frame and extends away from a first side of the metal flange. A second electrically conductive lead is disposed on the electrically insulating window frame and extends away from a second side of the metal flange, the second side being opposite the first side. A first harmonic filtering feature is formed on a portion of the electrically insulating window frame and is electrically connected to the first electrically conductive lead.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A power amplification device, including a first amplification branch, a second amplification branch, a harmonic injection circuit, and a first output matching circuit. A first amplifier in the first amplification branch supports a first frequency. A second amplifier in the second amplification branch supports the first frequency and a second frequency, and the second amplifier is turned off for a signal of the first frequency that has a power value lower than an enabling threshold. The harmonic injection circuit injects a signal of the second frequency that is input from a second input terminal (I2) to a signal of the first frequency that is input from a first input terminal (I1) to obtain a signal of the first frequency that has undergone harmonic injection.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A semiconductor package includes a metal flange having a lower surface and an upper surface opposite the lower surface. An electrically insulating window frame is disposed on the upper surface of the flange. The electrically insulating window frame forms a ring around a periphery of the metal flange so as to expose the upper surface of the metal flange in a central die attach region. A first electrically conductive lead is disposed on the electrically insulating window frame and extends away from a first side of the metal flange. A second electrically conductive lead is disposed on the electrically insulating window frame and extends away from a second side of the metal flange, the second side being opposite the first side. A first harmonic filtering feature is formed on a portion of the electrically insulating window frame and is electrically connected to the first electrically conductive lead.

Abstract: A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

Abstract: A multi-die package is manufactured by attaching a first semiconductor die made of a first semiconductor material to a thermally conductive flange via a first die attach material, and attaching a second semiconductor die to the same thermally conductive flange as the first semiconductor die via a second die attach material. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. The first semiconductor die is held in place by the first die attach material during attachment of the second semiconductor die to the flange. Leads are attached to the thermally conductive flange or to an insulating member secured to the flange. The leads provide external electrical access to the first and second semiconductor dies.

Abstract: A power amplification device, including a first amplification branch, a second amplification branch, a harmonic injection circuit, and a first output matching circuit. A first amplifier in the first amplification branch supports a first frequency. A second amplifier in the second amplification branch supports the first frequency and a second frequency, and the second amplifier is turned off for a signal of the first frequency that has a power value lower than an enabling threshold. The harmonic injection circuit injects a signal of the second frequency that is input from a second input terminal (I2) to a signal of the first frequency that is input from a first input terminal (I1) to obtain a signal of the first frequency that has undergone harmonic injection.

Abstract: A multi-die package is manufactured by attaching a first semiconductor die made of a first semiconductor material to a thermally conductive flange via a first die attach material, and attaching a second semiconductor die to the same thermally conductive flange as the first semiconductor die via a second die attach material. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. The first semiconductor die is held in place by the first die attach material during attachment of the second semiconductor die to the flange. Leads are attached to the thermally conductive flange or to an insulating member secured to the flange. The leads provide external electrical access to the first and second semiconductor dies.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of network equipment. When the network equipment is in an idle state, at least one power amplifier transistor is switched off according to a voltage signal.

Abstract: A method and network equipment for controlling power amplification are disclosed. The method for controlling power amplification includes outputting a voltage signal according to the state of an NE. The voltage signal is applied to a grid electrode or a base electrode of at least one power amplifier transistor in a power amplifier.

Abstract: One aspect of the present invention provides a method for improving power amplification efficiency of a Doherty power amplifier. The method is applied to a Doherty power amplifier that has two paths of Doherty circuit units connected in parallel. The method includes: when output power of the Doherty power amplifier is within a low out power range, adjusting, by a bias circuit, gate voltages of main power amplifiers and peak power amplifiers in the two paths of Doherty circuit units connected in parallel, in order to cause the peak power amplifiers to be in an off state, and the main power amplifiers in the two paths of Doherty circuit units connected in parallel to be in a main power amplification state and a peak power amplification state respectively.

Abstract: One aspect of the present invention provides a method for improving power amplification efficiency of a Doherty power amplifier. The method is applied to a Doherty power amplifier that has two paths of Doherty circuit units connected in parallel. The method includes: when output power of the Doherty power amplifier is within a low out power range, adjusting, by a bias circuit, gate voltages of main power amplifiers and peak power amplifiers in the two paths of Doherty circuit units connected in parallel, in order to cause the peak power amplifiers to be in an off state, and the main power amplifiers in the two paths of Doherty circuit units connected in parallel to be in a main power amplification state and a peak power amplification state respectively.

Abstract: A method and an NE for controlling power amplification are provided. The method for controlling power amplification includes: outputting a voltage signal according to the state of an NE; applying the voltage signal to a grid electrode or a base electrode of at least one power amplifier transistor in a power amplifier. Thus, static power dissipation of the power amplifier can be eliminated when no RF power is output, and the efficiency of the power amplifier can be improved by using the above method and NE.

Abstract: A high-efficiency power amplifier is provided, including a drive amplifier and a final power amplifier, and further including a first digital pre-distortion (DPD) correction module and a second DPD correction module. The first DPD correction module is configured to pre-distort nonlinear characteristics of drive signals output by the drive amplifier, and the second DPD correction module is connected to the first DPD correction module in series, and is configured to pre-distort nonlinear characteristics of amplified signals output by the final power amplifier. Another high-efficiency power amplifier is also provided, including a drive amplifier and a final power amplifier, and further including a second multi-path control module, a fourth DPD correction module, and a second gating module. The overall efficiency of the high-efficiency power amplifier is increased by improving the working efficiency of the drive amplifier.