Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1?x) layer as are methods of forming such a photovoltaic device.

Abstract: A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract: A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract: A tool for use in fabricating an electronic component includes a plurality of processing modules and a transfer chamber in communication with each of the plurality of processing modules. The transfer chamber includes a component for transferring a structure to each of the plurality of processing modules. The plurality of processing modules and the transfer chamber are sealed from the surrounding environment and are under a vacuum. The plurality of processing modules includes a first module configured to perform a first process on the structure and a second module configured to perform a second process on the structure. The first process includes performing at least one shaping operation on the structure.

Abstract: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer.

Abstract: In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: Method and apparatus for controlling evacuation pressure of a load lock connected to a processing chamber uses prior pressure changes detected in the processing chamber when the load lock communicates with the processing chamber.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract: In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.