Abstract: The present invention relates to a crystal form of Vonoprazan pyroglutamate and a preparation method therefor. The crystal form of Vonoprazan pyroglutamate obtained in the present invention not only has good solubility, but also has excellent storage stability. The in vitro activity experiments have shown that the inhibitory effect of the crystal form I of the present invention on H+K+-ATPase is equivalent to that of TAK-438. The animal experiments have shown that the crystal form of the present invention can significantly inhibit histamine-induced secretion of stomach acid in rats via intravenous administration, and can exert the efficacy faster than the duodenal administration of TAK-438.

Abstract: Embodiments provide a transistor and a method for manufacturing same, a semiconductor device and a method for manufacturing same. The method for manufacturing a transistor includes operations. A wafer is provided, the wafer has multiple transistor formation regions, each of which has a transistor pillar with an exposed gate formation surface. A gate oxide layer and a gate are sequentially formed on the gate formation surface of each of the transistor pillars. A source is formed at a first end of each of the transistor pillars. A drain is formed at a second end of each of the transistor pillars, here the first end and the second end are opposite ends of each of the transistor pillars in a first direction which is a thickness direction of the wafer; a part of each of the transistor pillars between the source and the drain forms a channel region of the transistor.

Abstract: A manufacturing method of an image sensing device includes the following steps. A substrate is provided. At least one image sensing unit is disposed in the substrate. A passivation layer is formed on the substrate. An auxiliary layer is formed on the passivation layer. A material composition of the auxiliary layer is different from a material composition of the passivation layer. An annealing process is performed to the substrate and the passivation layer. The passivation layer is covered by the auxiliary layer during the annealing process. The auxiliary layer is removed after the annealing process. The ability to constrain and/or passivate free charge in and/or near the passivation layer may be enhanced by performing the annealing process with the auxiliary layer covering the passivation layer. The electrical performance of the image sensing device may be improved accordingly.

Abstract: The invention discloses a method for improving bonding of dangling bonds of silicon atoms. A surface of a wafer is oxidized to form a silicon oxide layer. The upper surface of the silicon oxide layer has a dangling bond. A dielectric layer is disposed on the upper surface of the silicon oxide layer, which is then subjected to an oxygen-enriched oxidation treatment at a preset first temperature. A protective layer is disposed on the upper surface of the dielectric layer. The wafer is then subjected to an annealing treatment. By passing oxidizing gas through the surface of the protective layer, oxygen ions in the oxidizing gas penetrate the dielectric layer to reach wafer surface. After high-temperature annealing treatment, the unsaturated bonds of the silicon atoms are bonded to the oxygen ions on the wafer surface, thereby improving the bonding of the dangling bonds on the wafer surface.

Abstract: A manufacturing method of an image sensing device includes the following steps. A substrate is provided. At least one image sensing unit is disposed in the substrate. A passivation layer is formed on the substrate. An auxiliary layer is formed on the passivation layer. A material composition of the auxiliary layer is different from a material composition of the passivation layer. An annealing process is performed to the substrate and the passivation layer. The passivation layer is covered by the auxiliary layer during the annealing process. The auxiliary layer is removed after the annealing process. The ability to constrain and/or passivate free charge in and/or near the passivation layer may be enhanced by performing the annealing process with the auxiliary layer covering the passivation layer. The electrical performance of the image sensing device may be improved accordingly.

Abstract: The invention discloses a method for improving bonding of dangling bonds of silicon atoms. A surface of a wafer is oxidized to form a silicon oxide layer. The upper surface of the silicon oxide layer has a dangling bond. A dielectric layer is disposed on the upper surface of the silicon oxide layer, which is then subjected to an oxygen-enriched oxidation treatment at a preset first temperature. A protective layer is disposed on the upper surface of the dielectric layer. The wafer is then subjected to an annealing treatment. By passing oxidizing gas through the surface of the protective layer, oxygen ions in the oxidizing gas penetrate the dielectric layer to reach wafer surface. After high-temperature annealing treatment, the unsaturated bonds of the silicon atoms are bonded to the oxygen ions on the wafer surface, thereby improving the bonding of the dangling bonds on the wafer surface.

Abstract: The Invention relates to an upwardly and downwardly discharged faucet for comfortable use, comprising a main handle and a main valve body. The main valve body is provided with a diverting valve with dual ports. The diverting valve comprises a valve seat mounted on the main valve body. On the bottom side wall of the valve seat are disposed a left inlet and right inlet which are in communication with a main conduit, respectively. Within a chamber is disposed a diverting valve core, in which an upper water conduit and a lower water conduit are disposed. The upper water conduit is in adjustable communication with the right inlet; and the lower water conduit is in adjustable communication with the left inlet. The outlet of the lower water conduit is in communication with the bottom of the chamber. On the upper end of the diverting valve core is provided a rotary valve stem.

Abstract: The Invention relates to an upwardly and downwardly discharged faucet for comfortable use, comprising a main handle and a main valve body. The main valve body is provided with a diverting valve with dual ports. The diverting valve comprises a valve seat mounted on the main valve body. On the bottom side wall of the valve seat are disposed a left inlet and right inlet which are in communication with a main conduit, respectively. Within a chamber is disposed a diverting valve core, in which an upper water conduit and a lower water conduit are disposed. The upper water conduit is in adjustable communication with the right inlet; and the lower water conduit is in adjustable communication with the left inlet. The outlet of the lower water conduit is in communication with the bottom of the chamber. On the upper end of the diverting valve core is provided a rotary valve stem.