Patents by Inventor Xin D. Wu

Xin D. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5470668
    Abstract: A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.
    Type: Grant
    Filed: March 31, 1994
    Date of Patent: November 28, 1995
    Assignee: The Regents of the University of Calif.
    Inventors: Xin D. Wu, Prabhat Tiwari
  • Patent number: 5270294
    Abstract: A substrate-free, free-standing epitaxially oriented superconductive film including a layer of a template material and a layer of a ceramic superconducting material is provided together with a method of making such a substrate-free ceramic superconductive film by coating an etchable material with a template layer, coating the template layer with a layer of a ceramic superconductive material, coating the layer of ceramic superconductive material with a protective material, removing the etchable material by an appropriate means so that the etchable material is separated from a composite structure including the template layThis invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).
    Type: Grant
    Filed: December 27, 1991
    Date of Patent: December 14, 1993
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Xin D. Wu, Ross E. Muenchausen
  • Patent number: 5262394
    Abstract: A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.
    Type: Grant
    Filed: December 27, 1991
    Date of Patent: November 16, 1993
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Xin D. Wu, Ross E. Muenchausen
  • Patent number: 5252551
    Abstract: An article of manufacture including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superco nFIELD OF THE INVENTIONThe pre
    Type: Grant
    Filed: December 27, 1991
    Date of Patent: October 12, 1993
    Assignee: The United States of America as represented by the Department of Energy
    Inventors: Xin D. Wu, Ross E. Muenchausen
  • Patent number: 5015492
    Abstract: Vapor deposition of a thin film is accomplished by employing a pulsed laser to irradiate at least a region of a homogeneous stoichiometric complex material pellet with sufficient energy density to accomplish congruent evaporation of constituents of the material. The energy density is further at least sufficient to cause at least a predetermined portion, a central forward lobe, of the evaporant to have approximately the same stoichiometry as the irradiated material. A substrate is positioned to allow deposit thereon of that lobe portion of the evaporant as a thin film.
    Type: Grant
    Filed: April 3, 1989
    Date of Patent: May 14, 1991
    Assignees: Rutgers University, Bell Communications Research, Inc.
    Inventors: Thirumalai Venkatesan, Xin D. Wu