Patents by Inventor Xinfang Liu

Xinfang Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET structure having a gate contact above a metal gate and straddling the boundary of an active region
    Patent number: 12148834
    Abstract: A field-effect transistor structure includes a semiconductor substrate, a metal gate, a metal trench for source, a metal trench for drain, an etching-stop layer, and a gate contact. The etching-stop layer is overlaid on the metal trench for source and the metal trench for drain. The gate contact is above an active region.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: November 19, 2024
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Xinfang Liu, Miao Xu, Yanxiang Liu
  • Structure and Manufacturing Method of Field-Effect Transistor with Low Gate Resistance
    Publication number: 20210257494
    Abstract: A field-effect transistor structure includes a semiconductor substrate, a metal gate, a metal trench for source, a metal trench for drain, an etching-stop layer, and a gate contact, the etching-stop layer is overlaid on the metal trench for source and the metal trench for drain. The gate contact is above an active region.
    Type: Application
    Filed: April 9, 2021
    Publication date: August 19, 2021
    Inventors: Xinfang Liu, Miao Xu, Yanxiang Liu
  • Equivalent radio frequency notch filter, radio frequency chip, and receiver
    Patent number: 8385873
    Abstract: An equivalent radio frequency (RF) notch filter, an RF chip, and a receiver are provided. The equivalent RF notch filter includes: a local oscillation (LO) circuit, configured to provide a LO frequency signal; configured to be connected in parallel with the main chain, and down-convert signals of the main chain; and a frequency selective circuit realized by impedance difference, configured to provide different impedances for down-converted signals with different frequencies from the mixing circuit, so as to absorb the signals that need to be suppressed.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: February 26, 2013
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Jianjun Zhou, Zhuobiao He, Fan Yang, Yusong Chi, Meng Wang, Hongyu Wang, Xinfang Liu, Min Yi, Xinrong Hu
  • EQUIVALENT RADIO FREQUENCY NOTCH FILTER, RADIO FREQUENCY CHIP, AND RECEIVER
    Publication number: 20110230157
    Abstract: An equivalent radio frequency (RF) notch filter, an RF chip, and a receiver are provided. The equivalent RF notch filter includes: a local oscillation (LO) circuit, configured to provide a LO frequency signal; configured to be connected in parallel with the main chain, and down-convert signals of the main chain; and a frequency selective circuit realized by impedance difference, configured to provide different impedances for down-converted signals with different frequencies from the mixing circuit, so as to absorb the signals that need to be suppressed.
    Type: Application
    Filed: May 27, 2011
    Publication date: September 22, 2011
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Jianjun ZHOU, Zhuobiao HE, Fan YANG, Yusong CHI, Meng WANG, Hongyu WANG, Xinfang LIU, Min YI, Xinrong HU