Abstract: The three-stage axial flow degassing device adopts an efficient degassing technology including a vertical high speed swirling field, a horizontal rapid axial flow field and a vertical reversing scrubbing field formed by a combination of vertical tubes; the first-stage degasser performs the first-stage segmental vertical high speed swirling degassing operation, removes the gas phase carried by the gas-containing fluid, and forms a primary gas and a primary fluid; the microporous uniform mixer breaks bubbles of the primary fluid and forms a gas-liquid uniform mixed flow; the second-stage degasser performs the second-stage horizontal vane wheel swirling generating rapid axial flow degassing operation, removes the gas phase carried by the gas-liquid uniform mixed flow, and forms a secondary gas and a secondary fluid; the third-stage degasser performs the third-stage vertical reversing deep degassing operation, removes liquid phase carried by the secondary gas, and forms a tertiary gas and a tertiary fluid.

Abstract: A three-stage tubular T-shaped degassing device with microbubble axial flow and spiral flow fields is provided, which is applied to quick degassing of a gas-liquid two-phase flow. The three-stage tubular T-shaped degassing device adopts a quick degassing technology combining a microbubble uniform mixed rotational axial flow field and a spiral runner conical spiral flow field with layered jet collision reversing depth degassing. A microbubble uniform mixer is configured to adjust gas-liquid two-phase flow containing big bubbles into microbubble uniform mixed axial flow. A microbubble cyclone is configured to adjust the microbubble uniform mixed axial flow into multiple strands of rotational axial flows containing microbubbles. A rotational axial flow degasser implements the horizontal type microbubble uniform mixed multiple strands rotational axial flow degassing operation to remove most microbubbles to form axial flow gas and axial flow liquid.

Abstract: A separation device with two-stage gas-liquid mixture and conical spiral fields is provided. A first-stage uniform mixer performs first-stage gas-liquid crushing and uniform mixing process by an outer micropore ceramic pipe, a middle micropore ceramic pipe and an inner micropore ceramic pipe and crushes large bubbles in the gas-liquid two-phase flow into small bubbles. A second-stage uniform mixer performs second-stage gas-liquid crushing and uniform mixing process. A whirlpool-making gas collector adjusts the gas-liquid uniform mixing flow obtained after two-stage gas-liquid uniform mixing into hollow-core type high-speed two-phase spiral flow. A conical degasser performs gas-liquid efficient separation operation in a high-speed conical spiral field.

Abstract: A lock includes a latch and electromagnet configured to open the latch in response to a voltage being applied across the electromagnet. The lock includes a normally closed switch configured to open in response to the voltage being applied across the electromagnet. The lock includes a normally open switch configured to close in response to the voltage being applied across the electromagnet. A method of opening a lock includes applying a voltage across an electromagnet in a lock. The electromagnet is configured to open a latch in the lock in response to the voltage being applied across the electromagnet. The method includes causing the electromagnet to open the latch in response to the voltage being applied across the electromagnet. The method includes opening a normally closed switch by applying the voltage across the electromagnet and closing a normally open switch by applying the voltage across the electromagnet.

Abstract: The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices.

Abstract: A separation device with two-stage gas-liquid mixture and conical spiral fields is provided. A first-stage uniform mixer performs first-stage gas-liquid crushing and uniform mixing process by an outer micropore ceramic pipe, a middle micropore ceramic pipe and an inner micropore ceramic pipe and crushes large bubbles in the gas-liquid two-phase flow into small bubbles. A second-stage uniform mixer performs second-stage gas-liquid crushing and uniform mixing process. A whirlpool-making gas collector adjusts the gas-liquid uniform mixing flow obtained after two-stage gas-liquid uniform mixing into hollow-core type high-speed two-phase spiral flow. A conical degasser performs gas-liquid efficient separation operation in a high-speed conical spiral field.

Abstract: A three-stage degassing and dewatering device includes a first-stage degasser, a second-stage degasser, an oil drainer, a rod electrode, a dewaterer, and a water drainer. The first-stage degasser implements a first-stage axial-flow type collision buffer degassing and dewatering operation, forming a first-stage crude oil after removing some of the gas and water in the gas-containing and water-containing crude oil. The second-stage degasser implements a second-stage elevated efficient degassing operation, forming a second-stage crude oil after removing the remaining gas in the first-stage crude oil. The rod electrode constructs a dynamic electric field with a high frequency and a high voltage, and implements a third-stage high-frequency and high-voltage rapid dewatering operation together with the dewaterer, forming a qualified crude oil after removing the remaining water in the crude oil emulsion.

Abstract: The present invention relates to a plug and valve integrated cone valve pump with combined type movable and fixed three cylinders and two spiral centralizers, which is applied to suction working conditions in highly deviated well sections. It comprises three pump cylinders, which are combined type including two fixed cylinders and a dynamic cylinder, two centralizers, which are combined type including a dynamic spiral centralizer and fixed spiral centralizer, a fixed cone valve, a cylinder and plug integrated springing fixed cone valve, a fixed plunger and a movable guide rod cone valve to solve the problems such as stuck pump, eccentric wear between plunger and pump cylinder and valve leakage.

Abstract: A three-stage tubular T-shaped degassing device with microbubble axial flow and spiral flow fields is provided, which is applied to quick degassing of a gas-liquid two-phase flow. The three-stage tubular T-shaped degassing device adopts a quick degassing technology combining a microbubble uniform mixed rotational axial flow field and a spiral runner conical spiral flow field with layered jet collision reversing depth degassing. A microbubble uniform mixer is configured to adjust gas-liquid two-phase flow containing big bubbles into microbubble uniform mixed axial flow. A microbubble cyclone is configured to adjust the microbubble uniform mixed axial flow into multiple strands of rotational axial flows containing microbubbles. A rotational axial flow degasser implements the horizontal type microbubble uniform mixed multiple strands rotational axial flow degassing operation to remove most microbubbles to form axial flow gas and axial flow liquid.

Abstract: The three-stage axial flow degassing device adopts an efficient degassing technology including a vertical high speed swirling field, a horizontal rapid axial flow field and a vertical reversing scrubbing field formed by a combination of vertical tubes; the first-stage degasser performs the first-stage segmental vertical high speed swirling degassing operation, removes the gas phase carried by the gas-containing fluid, and forms a primary gas and a primary fluid; the microporous uniform mixer breaks bubbles of the primary fluid and forms a gas-liquid uniform mixed flow; the second-stage degasser performs the second-stage horizontal vane wheel swirling generating rapid axial flow degassing operation, removes the gas phase carried by the gas-liquid uniform mixed flow, and forms a secondary gas and a secondary fluid; the third-stage degasser performs the third-stage vertical reversing deep degassing operation, removes liquid phase carried by the secondary gas, and forms a tertiary gas and a tertiary fluid.

Abstract: The three-stage degassing and dewatering technology with vertical, horizontal and elevated T-shaped tubes combined as well as a high-frequency and high-voltage dynamic electric field dewatering technology with a mouse cage formation constructed by rod electrodes are adopted. The first-stage degasser implements a first-stage axial-flow type collision buffer degassing and dewatering operation, forming a first-stage crude oil after removing some of the gas and water in the gas-containing and water-containing crude oil. The second-stage degasser implements a second-stage elevated efficient degassing operation, forming a second-stage crude oil after removing the remaining gas in the first-stage crude oil. The rod electrode constructs a dynamic electric field with a high frequency and a high voltage, and implements a third-stage high-frequency and high-voltage rapid dewatering operation together with the elevated dewaterer, forming a qualified crude oil after removing the remaining water in the crude oil emulsion.

Abstract: The present invention relates to a plug and valve integrated cone valve pump with combined type movable and fixed three cylinders and two spiral centralizers, which is applied to suction working conditions in highly deviated well sections. It comprises three pump cylinders, which are combined type including two fixed cylinders and a dynamic cylinder, two centralizers, which are combined type including a dynamic spiral centralizer and fixed spiral centralizer, a fixed cone valve, a cylinder and plug integrated springing fixed cone valve, a fixed plunger and a movable guide rod cone valve to solve the problems such as stuck pump, eccentric wear between plunger and pump cylinder and valve leakage.

Abstract: A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type dopants into the substrate. The VT implant forms a VT adjust region to obtain a desired VT of a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the VT implanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.

Abstract: A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type dopants into the substrate. The VT implant forms a VT adjust region to obtain a desired VT of a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the VT implanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.

Abstract: A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type dopants into the substrate. The VT implant forms a VT adjust region to obtain a desired VT of a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the VT implanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.

Abstract: A device and methods of forming the device are disclosed. A substrate with a circuits component and a dielectric layer with interconnects is provided. A pad level dielectric layer is formed over the dielectric layer. A primary passivation layer is formed over the pad level dielectric layer with pad interconnects. The substrate is subjected to an alloying process. During the alloying process, the primary passivation layer prevents or reduces formation of hillocks on surfaces of the pad interconnects to improve surface smoothness of the pad interconnects. Pad openings are formed in the pad level dielectric layer to expose top surfaces of the pad interconnects. A cap dielectric layer is formed on the substrate and lines the primary passivation layer as well as the exposed top surfaces of the pad interconnects. A final passivation layer is formed on the substrate and covers the cap dielectric layer. The final passivation layer is patterned to form final passivation openings corresponding to the pad openings.

Abstract: A device and methods of forming the device are disclosed. A substrate with a circuits component and a dielectric layer with interconnects is provided. A pad level dielectric layer is formed over the dielectric layer. A primary passivation layer is formed over the pad level dielectric layer with pad interconnects. The substrate is subjected to an alloying process. During the alloying process, the primary passivation layer prevents or reduces formation of hillocks on surfaces of the pad interconnects to improve surface smoothness of the pad interconnects. Pad openings are formed in the pad level dielectric layer to expose top surfaces of the pad interconnects. A cap dielectric layer is formed on the substrate and lines the primary passivation layer as well as the exposed top surfaces of the pad interconnects. A final passivation layer is formed on the substrate and covers the cap dielectric layer. The final passivation layer is patterned to form final passivation openings corresponding to the pad openings.

Abstract: High voltage devices and methods for forming a high voltage device are disclosed. The high voltage device includes a substrate prepared with a device isolation region. The device isolation region defines a device region. The device region includes at least first and second source/drain regions and a gate region defined thereon. A device well is disposed in the device region. The device well encompasses the at least first and second source/drain regions. A primary gate and at least one secondary gate adjacent to the primary gate are disposed in the gate region. The at least first and second source/drain regions are displaced from first and second sides of the primary gate.

Abstract: A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type dopants into the substrate. The VT implant forms a VT adjust region to obtain a desired VT of a transistor. A co-implantation with diffusion suppression material is performed to form a diffusion suppression (DS) region in the substrate. The DS region reduces or prevents segregation and out-diffusion of the VT implanted second polarity type dopants. A transistor of a first polarity type having a gate is formed in the device region. First and second diffusion regions are formed adjacent to sidewalls of the gate.

Abstract: High voltage devices and methods for forming a high voltage device are disclosed. The high voltage device includes a substrate prepared with a device isolation region. The device isolation region defines a device region. The device region includes at least first and second source/drain regions and a gate region defined thereon. A device well is disposed in the device region. The device well encompasses the at least first and second source/drain regions. A primary gate and at least one secondary gate adjacent to the primary gate are disposed in the gate region. The at least first and second source/drain regions are displaced from first and second sides of the primary gate.