Patents by Inventor Xin-Guan Lin

Xin-Guan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9881809
    Abstract: A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: January 30, 2018
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Xin-Guan Lin, Hong-Ji Lee
  • Publication number: 20160300761
    Abstract: A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.
    Type: Application
    Filed: April 8, 2015
    Publication date: October 13, 2016
    Inventors: Xin-Guan Lin, Hong-Ji Lee