Patents by Inventor XIN-HE YANG

XIN-HE YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11542165
    Abstract: A method of making a carbon nanotube bundle is provided. A plurality of carbon nanotubes is provided. A plurality of sulfur nanoparticles is disposed on the plurality of carbon nanotubes to form at least two visible carbon nanotubes. The at least two visible carbon nanotubes are stacked to form a carbon nanotube bundle preparation body. The plurality of sulfur nanoparticles in the carbon nanotube bundle preparation body is removed to obtain the carbon nanotube bundle.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: January 3, 2023
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xin-He Yang, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 11527336
    Abstract: A high temperature resistant wire is provided. The high temperature resistant wire comprises a carbon nanotube wire and a boron nitride layer coated on a surface of the carbon nanotube wire. The boron nitride layer is coaxially arranged with the carbon nanotube wire. A working temperature of the high temperature resistant wire in the air ranges from 0K to 1600K. A working temperature of the high temperature resistant wire in vacuum ranges from 0K to 2500K. A detector using the high temperature resistant wire is also provided.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: December 13, 2022
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xin-He Yang, Peng Liu, Shi-Wei Lv, Duan-Liang Zhou, Chun-Hai Zhang, Feng Gao, Jian-Dong Gao, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 11437213
    Abstract: An electron emission source is provided. The electron emission source includes a first electrode, an insulating layer, and a second electrode. The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: September 6, 2022
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xin-He Yang, Peng Liu, Shou-Shan Fan
  • Patent number: 11195686
    Abstract: A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.
    Type: Grant
    Filed: October 11, 2020
    Date of Patent: December 7, 2021
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xin-He Yang, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20210217572
    Abstract: A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.
    Type: Application
    Filed: October 11, 2020
    Publication date: July 15, 2021
    Inventors: XIN-HE YANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20210217962
    Abstract: A field effect transistor comprises a source electrode, a drain electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The source electrode and the drain electrode are located on a second surface of the insulating layer and spaced away from each other. The single carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the single carbon nanotube is electrically connected to the source electrode, and the second end of the single carbon nanotube is electrically connected to the drain electrode. The middle portion of the single carbon nanotube comprises a plurality of defects.
    Type: Application
    Filed: October 11, 2020
    Publication date: July 15, 2021
    Inventors: XIN-HE YANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20210188645
    Abstract: A method of making a carbon nanotube bundle is provided. A plurality of carbon nanotubes is provided. A plurality of sulfur nanoparticles is disposed on the plurality of carbon nanotubes to form at least two visible carbon nanotubes. The at least two visible carbon nanotubes are stacked to form a carbon nanotube bundle preparation body. The plurality of sulfur nanoparticles in the carbon nanotube bundle preparation body is removed to obtain the carbon nanotube bundle.
    Type: Application
    Filed: June 23, 2020
    Publication date: June 24, 2021
    Inventors: XIN-HE YANG, PENG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Publication number: 20210193425
    Abstract: An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, and a second electrode, The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers.
    Type: Application
    Filed: June 12, 2020
    Publication date: June 24, 2021
    Inventors: XIN-HE YANG, PENG LIU, SHOU-SHAN FAN
  • Patent number: 10879026
    Abstract: An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, a semiconductor layer, and a second electrode. The first electrode, the insulating layer, the semiconductor layer, and the second electrode are successively stacked with each other. The second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electrons.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: December 29, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xin-He Yang, Peng Liu, Shou-Shan Fan
  • Publication number: 20200243214
    Abstract: A high temperature resistant wire is provided. The high temperature resistant wire comprises a carbon nanotube wire and a boron nitride layer coated on a surface of the carbon nanotube wire. The boron nitride layer is coaxially arranged with the carbon nanotube wire. A working temperature of the high temperature resistant wire in the air ranges from 0 K to 1600 K. A working temperature of the high temperature resistant wire in vacuum ranges from 0 K to 2500 K. A detector using the high temperature resistant wire is also provided.
    Type: Application
    Filed: June 21, 2019
    Publication date: July 30, 2020
    Inventors: XIN-HE YANG, PENG LIU, SHI-WEI LV, DUAN-LIANG ZHOU, CHUN-HAI ZHANG, FENG GAO, JIAN-DONG GAO, KAI-LI JIANG, SHOU-SHAN FAN