Patents by Inventor XinHua Wang

XinHua Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12278104
    Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: April 15, 2025
    Assignee: Institute of Microelectronics of the Chines Academy of Sciences
    Inventors: Fengwen Mu, Xinhua Wang, Sen Huang, Ke Wei, Xinyu Liu
  • Publication number: 20240355921
    Abstract: The folded channel gallium nitride based field-effect transistor includes: a base layer; a multi-heterojunction layer, including a channel layer and a barrier layer alternatingly stacked from bottom to top on a gallium nitride semi-insulating layer; a gallium nitride control layer on the multi-heterojunction layer and extending from one side of the channel region to at least a part of the groove; a current collapse suppression structure formed on the multi-heterojunction layer on another side of the channel region; a source electrode and a drain electrode that are respectively in contact with two sides of the multi-heterojunction layer on the gallium nitride semi-insulating layer; a gate electrode formed on the multi-heterojunction layer between the source electrode and the gallium nitride control layer; and a connecting structure passing over the gate electrode to electrically connect to the source electrode and the gallium nitride control layer.
    Type: Application
    Filed: August 28, 2023
    Publication date: October 24, 2024
    Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Sen HUANG, Qimeng JIANG, Xinyue DAI, Xinhua WANG, Xinyu LIU
  • Publication number: 20240174750
    Abstract: Disclosed herein are antibodies that bind specifically to CD47 and have optimized functional and safety properties.
    Type: Application
    Filed: March 22, 2022
    Publication date: May 30, 2024
    Inventors: Xinhua WANG, Xiaocheng CHEN, Oi Kwan WONG, Leonard POST
  • Publication number: 20240057615
    Abstract: A biological seed-coating agent (SCA) including a fermentation broth obtained based on co-cultivation of Trichoderma and Bacillus sequentially inoculated, and a preparation method thereof are provided. According to a principle of synthesis biology, Trichoderma that induces disease resistance and stress resistance and Bacillus that antagonizes pathogens and promotes crop growth are inoculated in stages for co-fermentation to prepare a microbial co-culture solution. The microbial co-culture solution is mixed with diatomaceous earth and brassinolide according to a specified ratio to prepare a biological SCA in a dosage form of a powder. The biological SCA includes high contents of spores and antagonistic and growth-promoting substances.
    Type: Application
    Filed: June 22, 2022
    Publication date: February 22, 2024
    Applicant: SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Jie CHEN, Peng LIU, Xinhua WANG
  • Publication number: 20240044360
    Abstract: A novel hinge and an inward-folding flexible screen mobile terminal. Each of a left structure and a right structure of the hinge includes a mechanism consisting of a push-pull rod and a fixed base and used for pushing and pulling a housing connecting member to slidably move, a rotating member, a rotating guide rail, and a rotary supporting plate; the rotating member is slidably connected to the housing connecting member; the rotating guide rail is rotatably connected to the fixed base; the outer side end of the rotary supporting plate is a rotary connecting end and connected to the housing connecting member, and the rotary supporting plate is slidably connected to the rotating guide rail, so that the rotary supporting plate can rotate together with the housing connecting member, coaxially rotate with the rotating guide rail, and slide with respect to the rotating guide rail.
    Type: Application
    Filed: January 28, 2022
    Publication date: February 8, 2024
    Inventors: Qiangqiang ZHANG, Guoping YAO, Jiannan ZHANG, Xinhua WANG
  • Publication number: 20240040021
    Abstract: Provided in the present invention are a hinge with a lifting drive control function and an inward-folding flexible screen mobile terminal. A left structure and a right structure of the hinge each comprise a rotating member; a rotary connecting end of the rotating member is provided with a supporting portion; and the supporting portion is configured to jack, when the flexible screen mobile terminal is unfolded, lifting plates which are above the supporting portions of the left structure and the right structure. The hinge is further provided with a spring for pulling the lifting plates downwards, so that when the flexible screen mobile terminal is folded, the lifting plates descend under the action of the downward pulling force of the spring.
    Type: Application
    Filed: January 28, 2022
    Publication date: February 1, 2024
    Inventors: Guoping YAO, Qiangqiang ZHANG, Jiannan ZHANG, Xinhua WANG
  • Patent number: 11710713
    Abstract: Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: July 25, 2023
    Assignee: Intel Corporation
    Inventor: Xinhua Wang
  • Publication number: 20230230831
    Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.
    Type: Application
    Filed: September 9, 2021
    Publication date: July 20, 2023
    Inventors: Fengwen MU, Xinhua WANG, Sen HUANG, Ke WEI, Xinyu LIU
  • Publication number: 20230159663
    Abstract: Disclosed herein are bispecific antibodies comprising a first targeting moiety that specifically binds to CD47 and a second targeting moiety that specifically binds to EpCAM or EGFR and, pharmaceutical compositions and methods comprising the bispecific antibodies.
    Type: Application
    Filed: April 23, 2021
    Publication date: May 25, 2023
    Inventors: Xinhua WANG, Xiaocheng CHEN, Lei SHI, Leonard POST, Oi Kwan WONG
  • Publication number: 20220344081
    Abstract: A method for improving magnetic properties of a Ce—Y-rich rare earth permanent magnet is provided, and the Ce—Y-rich rare earth permanent magnet is subjected to pressurized heat treatment to improve magnetic properties. The method includes: preparing a pristine magnet through a sintering process; and placing the pristine magnet into a pressurized heat treatment device and performing pressurized heat treatment under the protection of an argon atmosphere. By regulating parameters such as pressure, temperature and holding time in the heat treatment process, element diffusion in the Ce—Y-rich permanent magnet is promoted, and coercivity, remanence, magnetic energy product and temperature stability of the Ce—Y-rich permanent magnet are improved. The method has advantages of a simple process with low energy consumption, a substitution amount of rare earths Ce—Y up to 90 wt % while having excellent magnetic performance, so that a way for efficient utilization of high-abundance rare earths Ce and Y is provided.
    Type: Application
    Filed: April 25, 2022
    Publication date: October 27, 2022
    Inventors: Jiaying Jin, Mi Yan, Wang Chen, Chen Wu, Xinhua Wang
  • Publication number: 20220173065
    Abstract: Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.
    Type: Application
    Filed: February 21, 2022
    Publication date: June 2, 2022
    Inventor: Xinhua Wang
  • Patent number: 11289594
    Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: March 29, 2022
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Sen Huang, Xinhua Wang, Xinyu Liu, Yuankun Wang, Haibo Yin, Ke Wei
  • Patent number: 11257778
    Abstract: Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: February 22, 2022
    Assignee: Intel Corporation
    Inventor: Xinhua Wang
  • Patent number: 11208341
    Abstract: Provided is a sewage treatment device and method for synchronously recovering water and electric energy, belonging to the field of sewage treatment.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: December 28, 2021
    Assignee: JIANGNAN UNIVERSITY
    Inventors: Xinhua Wang, Manli Meng, Shuyue Liu
  • Publication number: 20210399125
    Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.
    Type: Application
    Filed: March 14, 2019
    Publication date: December 23, 2021
    Inventors: Sen HUANG, Xinhua WANG, Xinyu LIU, Yuankun WANG, Haibo YIN, Ke WEI
  • Patent number: 11181458
    Abstract: The present invention provides a method for processing a filter to obtain a calibration dust filter, and a method for off-site calibration using the calibration dust filter. In the present invention, a batch of filters that meets specific requirements is screened out as the basal filters, and then the basal filters are processed in an actual environment to obtain the calibration dust filters. The counted number of beta particles is measured before and after sampling, and then a correction factor K is inversely inferred. The beta attenuation suspended particulate analyzer is corrected using the correction factor K.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: November 23, 2021
    Assignee: Chinese Research Academy of Environmental Sciences
    Inventors: Zhipeng Bai, Wen Yang, Xinhua Wang, Chunmei Geng, Jing Wang, Baohui Yin, Bin Han, Xiujun Zhu, Xia Zhang, Xueyan Zhao, Yan Jiang, Xiaoli Wang, Wengang Sheng, Junfeng Guo
  • Publication number: 20210043761
    Abstract: A detector based on a gallium nitride-based enhancement-mode device and a manufacturing method thereof. The detector is a gas or solution detector. When the detector is used in electrolyte solution detection, electrolyte solution is located in the gate opening region and directly contacts the thin barrier layer to form a contact interface. The electrolyte solution affects interface charges at the contact interface, leading to a change in a concentration of the two-dimensional electron gas, and further a change in a current between the source and the drain. When the detector is used in a hydrogen-containing gas detection, the H concentration of the hydrogen-containing gas affects interface charges at the contact interface between the gate and the thin barrier layer, leading to a change in a concentration of the two-dimensional electron gas, and further a change in the current between the source and the drain.
    Type: Application
    Filed: May 7, 2020
    Publication date: February 11, 2021
    Applicant: INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES
    Inventors: Sen HUANG, Xinhua WANG, Ke WEI, Xinyu LIU, Wen SHI
  • Publication number: 20210010921
    Abstract: The present invention provides a method for processing a filter to obtain a calibration dust filter, and a method for off-site calibration using the calibration dust filter. In the present invention, a batch of filters that meets specific requirements is screened out as the basal filters, and then the basal filters are processed in an actual environment to obtain the calibration dust filters. The counted number of beta particles is measured before and after sampling, and then a correction factor K is inversely inferred. The beta attenuation suspended particulate analyzer is corrected using the correction factor K.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 14, 2021
    Inventors: Zhipeng BAI, Wen YANG, Xinhua WANG, Chunmei GENG, Jing WANG, Baohui YIN, Bin HAN, Xiujun ZHU, Xia ZHANG, Xueyan ZHAO, Yan JIANG, Xiaoli WANG, Wengang SHENG, Junfeng GUO
  • Patent number: 10886551
    Abstract: The present disclosure discloses a method for synchronously recovering metal and elemental sulfur, particularly to a method for synchronously recovering metal and elemental sulfur in sulfide ore tailings, and belongs to the technical field of waste recycling. According to the present disclosure, metal and sulfur element are transferred from a solid phase to a liquid phase in the form of ions respectively by leaching the sulfide ore tailings in an anode chamber, then metal ions are recovered in the form of hydroxide precipitate in a first cathode chamber, and sulfate ions are recovered in the form of elemental sulfur precipitate in a second cathode chamber. The method of the present disclosure can synchronously realize the recovery of metal and elemental sulfur in sulfide ore tailings, such that a metal recovery rate is up to 89.4%, and an elemental sulfur recovery rate is up to 45.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: January 5, 2021
    Assignee: Jiangnan University
    Inventors: Xiufen Li, Xiguang Qi, Xinhua Wang, Yueping Ren
  • Publication number: 20200375421
    Abstract: The present invention discloses a backpack vacuum cleaner, which includes a dust collection part, a base part, a vacuum electric fan and an air pressure alarm unit. The vacuum electric fan introduces dust-containing airflow into a dust collection bag from a dust inlet and guides air entering an exhaust space to an exhaust port. An air pressure detection element arranged in the tank detects the pressure in the exhaust space. The alarm sends an alarm signal to the outside and can decide whether to give an alarm to the outside based on a detection result of the air pressure detection element.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 3, 2020
    Inventors: Jian Huang, Xinhua Wang