Abstract: A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal.

Abstract: The present disclosure discloses a high-frequency acoustic wave resonator and a filter comprising the same. The high-frequency acoustic wave resonator includes, a support substrate, a bottom electrode, a piezoelectric film, and an interdigital transducer stacked in sequence from bottom to top; the interdigital transducer comprises a first bus bar and a plurality of first electrodes spaced apart; one same side of each of the plurality of first electrodes is connected to the first bus bar; the product of the spacing between the centers of adjacent first electrodes in the plurality of first electrodes and the frequency of the target mode is less than the acoustic velocity of the support substrate; the target mode is a high-order mode excited in the high-frequency acoustic wave resonator under the influence of a longitudinal electric field. The acoustic wave resonator provided by the present application is constructed on a heterogeneously integrated substrate.

Abstract: The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer (110) is transferred to a highly doped and highly thermally conductive heterogeneous substrate (200) by bonding and thinning; then a heavily doped gallium oxide layer (120) is formed on the gallium oxide layer by treating and ion implantation, thereby preparing the gallium oxide semiconductor structure including the heterogeneous substrate (200), the gallium oxide layer (110), and the heavily doped gallium oxide layer (120) stacked in sequence. In the vertical gallium oxide-based power device prepared on the basis of the gallium oxide semiconductor structure, the gallium oxide layer (110) is a thicker intermediate layer and a carrier concentration of the gallium oxide layer (110) is less than that of the heavily doped gallium oxide layer (120).

Abstract: A structure of a longitudinal leaky surface acoustic wave (LL-SAW) resonator and a filter includes a substrate, a piezoelectric thin film provided on the substrate, and an electrode array provided on the piezoelectric thin film, where the electrode array includes an interdigital transducer (IDT) array and a reflector grating electrode array; and a center distance between reflector grating electrodes in the reflector grating electrode array is less than a center distance between IDTs in the IDT array. Based on a nonstandard reflector (NSR) grating structure provided by the embodiments of the present disclosure, by reducing the center distance between the reflector grating electrodes in the reflector grating electrode array, the present disclosure can improve a reflective frequency range of the reflector grating electrode array, thereby suppressing a spurious mode of the LL-SAW, and improving performance of the LL-SAW resonator.

Abstract: A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal. Due to the existence of multiple times of necking treatment, it can reduce the thermal stress of the crystal itself, to prevent breakage as the crystal grows too long, while substantially reducing the generation of defects and the extension of the original defects during the multiple growth processes; and such structure can be free from the limitation of the size of high-pressure preparation apparatuses.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 ?·cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

Abstract: The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer (110) is transferred to a highly doped and highly thermally conductive heterogeneous substrate (200) by bonding and thinning; then a heavily doped gallium oxide layer (120) is formed on the gallium oxide layer by treating and ion implantation, thereby preparing the gallium oxide semiconductor structure including the heterogeneous substrate (200), the gallium oxide layer (110), and the heavily doped gallium oxide layer (120) stacked in sequence. In the vertical gallium oxide-based power device prepared on the basis of the gallium oxide semiconductor structure, the gallium oxide layer (110) is a thicker intermediate layer and a carrier concentration of the gallium oxide layer (110) is less than that of the heavily doped gallium oxide layer (120).

Abstract: The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

Abstract: A method for preparing a film bulk acoustic wave device by using a film transfer technology includes: 1) providing an oxide monocrystal substrate; 2) implanting ions from the implantation surface into the oxide monocrystal substrate, and then forming a lower electrode on the implantation surface; or vice versa; and forming a defect layer at the preset depth; 3) providing a support substrate and bonding a structure obtained in step 2) with the support substrate; 4) removing part of the oxide monocrystal substrate along the defect layer so as to obtain an oxide monocrystal film, and transferring the obtained oxide monocrystal film and the lower electrode to the support substrate; 5) etching the support substrate from a bottom of the support substrate to form a cavity; 6) forming an upper electrode on the surface of the oxide monocrystal film.

Abstract: A method for preparing a film bulk acoustic wave device by using a film transfer technology includes: 1) providing an oxide monocrystal substrate; 2) implanting ions from the implantation surface into the oxide monocrystal substrate, and then forming a lower electrode on the implantation surface; or vice versa; and forming a defect layer at the preset depth; 3) providing a support substrate and bonding a structure obtained in step 2) with the support substrate; 4) removing part of the oxide monocrystal substrate along the defect layer so as to obtain an oxide monocrystal film, and transferring the obtained oxide monocrystal film and the lower electrode to the support substrate; 5) etching the support substrate from a bottom of the support substrate to form a cavity; 6) forming an upper electrode on the surface of the oxide monocrystal film.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

Abstract: The present disclosure provides a method for preparing heterostructure, which includes providing a donor substrate and forming a sacrificial layer on a surface of the donor substrate; forming a thin film cover layer on a surface of the sacrificial layer, wherein a top surface of the thin film cover layer is an implantation surface; performing ion implantation from the implantation surface, such that a defect layer is formed in the sacrificial layer; providing an acceptor substrate, and bonding the acceptor substrate to the implantation surface of the thin film cover layer; removing the sacrificial layer along the defect layer. The method for preparing the heterostructure of the present disclosure can successfully transfer the thin film cover layer to the acceptor substrate. The present disclosure can provide a compliant substrate, while the semiconductor donor substrate material can be reused, therefore is energy-efficient and environmental-friendly.

Abstract: The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 ?·cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

Abstract: A phase-transition type vanadium oxide material and a preparation method therefor. The preparation method includes the following steps: providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition type vanadium oxide material having a preset phase-transition temperature. Subsequently, optionally, further annealing may be performed to adjust a bubble generation status in vanadium oxide after the gaseous ions are implanted, to further adjust the stress and strain and the phase-transition temperature. The method for preparing a phase-transition type vanadium oxide material consistent with the present invention has simple steps, desirable process reproducibility, high flexibility, and the phase-transition temperature of vanadium oxide can be continuously adjusted by changing an implantation dosage of the gaseous ions.

Abstract: A phase-transition type vanadium oxide material and a preparation method therefor. The preparation method includes the following steps: providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition type vanadium oxide material having a preset phase-transition temperature. Subsequently, optionally, further annealing may be performed to adjust a bubble generation status in vanadium oxide after the gaseous ions are implanted, to further adjust the stress and strain and the phase-transition temperature. The method for preparing a phase-transition type vanadium oxide material consistent with the present invention has simple steps, desirable process reproducibility, high flexibility, and the phase-transition temperature of vanadium oxide can be continuously adjusted by changing an implantation dosage of the gaseous ions.

Abstract: Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.