Abstract: In some examples, a fluid ejection device includes a substrate and a memory cell on the substrate, the memory cell including a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The memory cell includes a channel region between a drain region and a source region. The first dielectric layer is over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The floating gate includes a polysilicon layer, a metal layer, and a second dielectric layer between the polysilicon layer and the metal layer, where the second dielectric layer includes an opening through which the polysilicon layer is electrically connected to the metal layer.

Abstract: In some examples, a fluid ejection device includes a substrate and a memory cell on the substrate, the memory cell including a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The memory cell includes a channel region between a drain region and a source region. The first dielectric layer is over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The floating gate includes a polysilicon layer, a metal layer, and a second dielectric layer between the polysilicon layer and the metal layer, where the second dielectric layer includes an opening through which the polysilicon layer is electrically connected to the metal layer.

Abstract: A memory cell including a substrate, a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The substrate includes a channel region situated between a drain region and a source region. The first dielectric layer is situated over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The second dielectric layer is situated over the floating gate and the control gate is capacitively coupled to the floating gate through the second dielectric layer. A dielectric nitride layer is situated between the floating gate and the second dielectric layer to prevent charge loss from the floating gate to the second dielectric layer.

Abstract: A memory cell including a substrate, a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The substrate includes a channel region situated between a drain region and a source region. The first dielectric layer is situated over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The second dielectric layer is situated over the floating gate and the control gate is capacitively coupled to the floating gate through the second dielectric layer. A dielectric nitride layer is situated between the floating gate and the second dielectric layer to prevent charge loss from the floating gate to the second dielectric layer.

Abstract: A Micro Electro Mechanical Systems (MEMS) G-switch includes one or more actuators formed between fixed driving stages and moveable driving stages. A proof mass is attached to the moveable driving stages and flexibly attached to a substrate through one or more spring members. A voltage control circuit applies working voltages to the driving stages. With a first working voltage applied between the moveable and the fixed driving stages, moving of the driving stages' sensing direction towards gravity at a first critical angle will cause moveable driving stages to collapse and touch the fixed driving stage on the substrate and thus turn on the MEMS G-switch. After turning on the G-switch, a second working voltage is applied and moving of the driving stages' sensing direction away from gravity at a second critical angle will cause moveable electrodes to deviate from the fixed electrodes and thus turn off the MEMS G-switch.

Abstract: A Micro Electro Mechanical Systems (MEMS) G-switch includes one or more actuators formed between fixed driving stages and moveable driving stages. A proof mass is attached to the moveable driving stages and flexibly attached to a substrate through one or more spring members. A voltage control circuit applies working voltages to the driving stages. With a first working voltage applied between the moveable and the fixed driving stages, moving of the driving stages' sensing direction towards gravity at a first critical angle will cause moveable driving stages to collapse and touch the fixed driving stage on the substrate and thus turn on the MEMS G-switch. After turning on the G-switch, a second working voltage is applied and moving of the driving stages' sensing direction away from gravity at a second critical angle will cause moveable electrodes to deviate from the fixed electrodes and thus turn off the MEMS G-switch.