Patents by Inventor Xin Tan

Xin Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098628
    Abstract: The disclosure provides a normally-off gallium oxide field-effect transistor structure and a preparation method therefor, and relates to the technical field of semiconductor device. The normally-off gallium oxide field-effect transistor structure comprises a substrate layer and an n-type doped gallium oxide channel layer from bottom to top. The n-type doped gallium oxide channel layer is provided with a source, a drain, and a gate. The gate is located between the source and the drain. A no-electron channel region is provided in the n-type doped gallium oxide channel layer located below the gate.
    Type: Application
    Filed: October 1, 2020
    Publication date: April 1, 2021
    Inventors: Yuanjie Lv, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Shixiong Liang, Zhihong Feng
  • Publication number: 20210069198
    Abstract: The invention provides a composition comprising cannabidiol or a cannabis extract, and caffein. The mass percentage of the cannabidiol in the cannabis extract is 10%-99%. A mass ratio of the cannabidiol to the caffein in the composition is (1-100):60. The composition can be a food composition or a pharmaceutical composition. The cannabidiol or the cannabis extract can prevent and/or ameliorate adverse reactions induced by the caffeine, and in particular, prevent and/or ameliorate anxiety behaviors induced by the caffeine.
    Type: Application
    Filed: October 10, 2018
    Publication date: March 11, 2021
    Applicant: HANYI BIO-TECHNOLOGY (BEIJING) CO., LTD.
    Inventors: Ke ZHANG, Xin TAN, Zhaohui YU, Tanran CHANG, Meng LIAN, Qian JIN
  • Publication number: 20210043778
    Abstract: The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N+ high-concentration substrate layer, an N? low-concentration Ga2O3 epitaxial layer and an anode metal layer from bottom to top, wherein the N? low-concentration Ga2O3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.
    Type: Application
    Filed: October 13, 2020
    Publication date: February 11, 2021
    Inventors: Yuanjie LV, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Xuefeng Zou, Shixiong Liang, Zhihong Feng
  • Publication number: 20210036177
    Abstract: A method for preparing an avalanche photodiode includes preparing a mesa on a wafer, growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa, removing the sacrificial layer in an ohmic contact electrode region of the wafer, preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer, removing the sacrificial layer in a non-mesa region of the wafer, growing a passivation layer on the upper surface of the wafer and the side surface of the mesa, removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region, and removing the sacrificial layer on the upper surface of the mesa of the wafer.
    Type: Application
    Filed: September 24, 2020
    Publication date: February 4, 2021
    Inventors: Xingye Zhou, Zhihong Feng, Yuanjie LV, Xin Tan, Yuangang Wang, Xubo Song, Jia Li, Yulong Fang
  • Publication number: 20210020801
    Abstract: The disclosure is related to the technical field of semiconductors, and provides a method for manufacturing a tilted mesa and a method for manufacturing a detector. The method for manufacturing a tilted mesa comprises: coating a photoresist layer on a mesa region of a chip; heating the chip on which the photoresist layer is coated from a first preset temperature to a second preset temperature; performing etching processing on the heated chip, so as to manufacture a mesa having a preset tilting angle; and removing the photoresist layer on the mesa region of the chip after the mesa is manufactured.
    Type: Application
    Filed: September 24, 2020
    Publication date: January 21, 2021
    Inventors: Xingye Zhou, Zhihong Feng, Yuanjie LV, Xin Tan, Xubo Song, Jia Li, Yulong Fang, Yuangang Wang
  • Publication number: 20210020802
    Abstract: The disclosure provides a silicon carbide detector and a preparation method therefor. The silicon carbide detector comprises: a wafer, the wafer sequentially comprises, from bottom to top, a substrate, a silicon carbide P+ layer, an N-type silicon carbide insertion layer, an N+ type silicon carbide multiplication layer, an N-type silicon carbide absorption layer and a silicon carbide N+ layer; the doping concentration of the N-type silicon carbide insertion layer gradually increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer gradually decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to an upper surface of the silicon carbide P+ layer; an N-type electrode is arranged on an upper surface of the mesa, and a P-type electrode is arranged on an upper surface of a non-mesa region.
    Type: Application
    Filed: September 25, 2020
    Publication date: January 21, 2021
    Inventors: Xingye Zhou, Zhihong Feng, Yuanjie LV, Xin Tan, Yuangang Wang, Xubo Song, Jia Li, Yulong Fang
  • Publication number: 20210013027
    Abstract: The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset portion region of the mask layer; preparing an isolation area in a position, corresponding to the preset portion region, on the gallium oxide material by using a high-temperature oxidation technique, with the isolation area being located between active areas of the gallium oxide device; and removing the remaining mask layer on the gallium oxide material. In the disclosure, the isolation area is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area, thereby achieving isolation between the active areas of the gallium oxide device.
    Type: Application
    Filed: September 29, 2020
    Publication date: January 14, 2021
    Inventors: Yuanjie LV, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Shixiong Liang, Zhihong Feng
  • Patent number: 10854741
    Abstract: An enhanced HFET, comprising a HFET device body.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: December 1, 2020
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
    Inventors: Yuangang Wang, Zhihong Feng, Yuanjie Lv, Xin Tan, Xubo Song, Xingye Zhou, Yulong Fang, Guodong Gu, Hongyu Guo, Shujun Cai
  • Publication number: 20200360336
    Abstract: The present invention belongs to the field of biomedicine and relates to use of cannabidiol in the preparation of anti-influenza drugs. Specifically, the present invention relates to use of any one of (1) to (3) below in the preparation of drugs for treating or preventing influenza or drugs for relieving an influenza symptom: (1) cannabidiol or a pharmaceutically acceptable salt or ester thereof; (2) a plant extract containing cannabidiol; preferably, a cannabis extract containing cannabidiol; preferably, an industrial cannabis extract containing cannabidiol; and (3) a pharmaceutical composition, containing an effective amount of cannabidiol or a pharmaceutically acceptable salt or ester thereof, and one or more pharmaceutically acceptable auxiliary materials. The cannabidiol can effectively inhibit influenza viruses, and has the potential to prepare or be used as a drug for treating or preventing influenza.
    Type: Application
    Filed: August 31, 2017
    Publication date: November 19, 2020
    Applicant: HANYI BIO-TECHNOLOGY COMPANY LTD.
    Inventors: Ke ZHANG, Xin TAN, Xiangdong LI, Zhaohui YU
  • Publication number: 20200315933
    Abstract: The present invention belongs to the field of medicaments and daily chemicals, and relates to use of cannabidiol or an cannabis extract in preparing a skin whitening product. Particularly, the present invention relates to use of any one of (1) to (2) below in preparing a drug or a reagent for inhibiting tyrosinase activity, inhibiting melanin formation or inhibiting melanocyte generation: (1) cannabidiol or a pharmaceutically acceptable salt or ester thereof; and (2) a plant extract containing cannabidiol. The cannabidiol or the cannabis extract can effectively inhibit activity of tyrosinase, and has a good skin whitening effect.
    Type: Application
    Filed: December 20, 2017
    Publication date: October 8, 2020
    Applicant: HANYI BIO-TECHNOLOGY COMPANY LTD.
    Inventors: Ke ZHANG, Xin TAN, Zhaohui YU, Zheng CHEN, Yanan WU, Meng LI
  • Publication number: 20200312992
    Abstract: The present disclosure relates to semiconductor devices, and in particular, to an enhancement-mode field effect transistor. This enhancement-mode field effect transistor includes a substrate, a channel layer formed on an upper surface of the substrate, a source electrode and a drain electrode respectively formed on both sides of the channel layer, and a gate electrode formed on an upper surface of the channel layer, a region outside the corresponding region of the gate electrode in the channel layer is provided with a carrier-free region. Carriers are absent in the carrier-free region, and carriers are present in the remaining portion of the channel layer.
    Type: Application
    Filed: December 27, 2017
    Publication date: October 1, 2020
    Inventors: Yuanjie LV, Yuangang Wang, Xubo Song, Xin Tan, Xingye Zhou, Zhihong Feng
  • Publication number: 20200299849
    Abstract: The present disclosure provides a method and apparatus to perform an electrochemical process by manipulating the charge on an electrode involved in the primary circuit of the electrochemical reaction. The amount of charge on the electrode can be manipulated independent of the bias voltage of the primary circuit and is accomplished by coupling the electrode with various different configurations.
    Type: Application
    Filed: October 12, 2017
    Publication date: September 24, 2020
    Inventors: Sean Campbell Smith, Xin Tan, Hassan Tahini, Zhonghua Zhu, Xiaoyong Xu
  • Publication number: 20200261376
    Abstract: The present invention discloses a composition for preventing and/or treating woman dysmenorrhea; the composition includes cannabidiol and/or cannabidivarol, a penetration enhancer as well as a carrier; the mass ratio of the cannabidiol and/or the cannabidivarol to the penetration enhancer is 1:(0.1-0.8). The composition provided by the present invention can effectively relieve woman dysmenorrhea, and solve the problem of lackness of a composition of cannabidiol and/or cannabidivarol which can effectively prevent and/or treat woman dysmenorrhea in the prior art. Meanwhile, the composition provided by the present invention can also be used in preparation of a feminine hygiene product for preventing and/or treating woman dysmenorrhea.
    Type: Application
    Filed: August 16, 2018
    Publication date: August 20, 2020
    Applicant: HANYI BIO-TECHNOLOGY COMPANY LTD.
    Inventors: Zhaohui YU, Ke ZHANG, Xin TAN
  • Publication number: 20200188322
    Abstract: The present invention belongs to the field of medicine, and relates to use of cannabidiol (CBD) in the treatment of pulmonary arterial hypertension. The CBD can be used as the only active ingredient or combined with other active ingredients to prepare a medicament for treating pulmonary arterial hypertension. Specifically, the present invention relates to use of any one selected from (1) to (3) in the preparation of a medicament for treating and/or preventing pulmonary arterial hypertension: (1) CBD, (2) a plant extract containing the CBD; and preferably, the plant extract is a cannabis extract, and (3) a pharmaceutical composition containing the CBD and one or more pharmaceutically acceptable adjuvants. In the present invention, upon experimental researches, it has found that the CBD has the function of inhibiting pulmonary arterial hypertension, and is especially suitable for treating the pulmonary arterial hypertension caused by hypoxemia.
    Type: Application
    Filed: July 18, 2017
    Publication date: June 18, 2020
    Applicant: DEYI PHARMARMACEUTICAL LTD.
    Inventors: Ke ZHANG, Xin TAN, Zhaohui YU, Xiangdong LI
  • Publication number: 20200075754
    Abstract: An enhanced HFET, comprising a HFET device body.
    Type: Application
    Filed: December 11, 2017
    Publication date: March 5, 2020
    Inventors: Yuangang WANG, Zhihong FENG, Yuarille LV, Xin TAN, Xubo SONG, Xingye ZHOU, Yulong FANG, Guodong GU, Hongyu GUO, Shujun CAI
  • Patent number: 10505024
    Abstract: A method for preparing a cap-layer-structured gallium oxide field effect transistor, includes: removing a gallium oxide channel layer and a gallium oxide cap layer from a passive area of a gallium oxide epitaxial wafer; respectively removing the gallium oxide cap layer corresponding to a source region of the gallium oxide epitaxial wafer and the gallium oxide cap layer corresponding to a drain region of the gallium oxide epitaxial wafer; respectively doping a portion of the gallium oxide channel layer corresponding to the source region and a portion of the gallium oxide channel layer corresponding to the drain region with an N-type impurity; respectively capping an upper surface of the gallium oxide channel layer corresponding to the source region and an upper surface of the gallium oxide channel layer corresponding to the drain region with a first metal layer to respectively form a source and a drain; and forming a gate.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: December 10, 2019
    Assignee: The 13th Research Institute of China Electronics Technology Group Corporation
    Inventors: Yuanjie Lv, Xubo Song, Zhihong Feng, Yuangang Wang, Xin Tan, xingye Zhou
  • Patent number: 10301242
    Abstract: A method of extracting cannabidiol from hemp.
    Type: Grant
    Filed: January 21, 2017
    Date of Patent: May 28, 2019
    Assignee: Yunnan Hansu bio-technology Co.,Ltd
    Inventors: Ke Zhang, Xin Tan, Weibo Gao, Tanran Chang
  • Publication number: 20190027590
    Abstract: A method for preparing a cap-layer-structured gallium oxide field effect transistor, includes: removing a gallium oxide channel layer and a gallium oxide cap layer from a passive area of a gallium oxide epitaxial wafer; respectively removing the gallium oxide cap layer corresponding to a source region of the gallium oxide epitaxial wafer and the gallium oxide cap layer corresponding to a drain region of the gallium oxide epitaxial wafer; respectively doping a portion of the gallium oxide channel layer corresponding to the source region and a portion of the gallium oxide channel layer corresponding to the drain region with an N-type impurity; respectively capping an upper surface of the gallium oxide channel layer corresponding to the source region and an upper surface of the gallium oxide channel layer corresponding to the drain region with a first metal layer to respectively form a source and a drain; and forming a gate.
    Type: Application
    Filed: October 27, 2017
    Publication date: January 24, 2019
    Inventors: Yuanjie Lv, Xubo Song, Zhihong Feng, Yuangang Wang, Xin Tan, xingye Zhou
  • Publication number: 20180362429
    Abstract: A method of extracting cannabidiol from hemp.
    Type: Application
    Filed: January 21, 2017
    Publication date: December 20, 2018
    Applicant: Yunnan Hansu bio-technology Co., Ltd
    Inventors: Ke ZHANG, Xin TAN, Weibo GAO, Tanran CHANG
  • Patent number: 9982117
    Abstract: A thermoset rubber composition includes a thermoset rubber having crystallized domains dispersed therein, the crystallized domains being formed of supramolecule building blocks forming a plurality of sheet-like structures through hydrogen bonding, the sheet-like structures interacting through non-covalent interactions to form the crystallized domains within the thermoset rubber. The supramolecular building blocks may be peptides, ?-peptides, aramid oligomers, and bis-ureas.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: May 29, 2018
    Assignee: The University of Akron
    Inventors: Li Jia, Gary Hamed, Xin Tan