Patents by Inventor Xin-Xing Li

Xin-Xing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200273906
    Abstract: A display device includes at least one first and second electrodes extending in a first direction, at least one first and second light emitting elements disposed therebetween, a first contact electrode partially covering the first electrode and contacting a first end of the first light emitting element, a second contact electrode partially covering the second electrode and contacting a third end of the second light emitting element, and a third contact electrode disposed between the first and second contact electrodes and contacting a second end of the first light emitting element and a fourth end of the second light emitting element, in which a distance between the first and second electrodes is greater than a longitudinal length of at least one of the first and second light emitting elements, and the first and second light emitting elements are connected in series between the first and second electrodes.
    Type: Application
    Filed: January 14, 2019
    Publication date: August 27, 2020
    Inventors: Xin Xing LI, Tae Jin KONG, Hee Keun LEE, Hyun Min CHO, Chang II TAE
  • Patent number: 9196746
    Abstract: A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: November 24, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hong-Long Ning, Byeong-Beom Kim, Chang-Oh Jeong, Sang-Won Shin, Hyeong-Suk Yoo, Xin-Xing Li, Joon-Yong Park, Hyun-Ju Kang, Su-Kyoung Yang, Kyung-Seop Kim
  • Publication number: 20120286272
    Abstract: A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
    Type: Application
    Filed: June 4, 2012
    Publication date: November 15, 2012
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hong-Long NING, Byeong-Beom KIM, Chang-Oh JEONG, Sang-Won SHIN, Hyeong-Suk YOO, Xin-Xing LI, Joon-Yong PARK, Hyun-Ju KANG, Su-Kyoung YANG, Kyung-Seop KIM
  • Patent number: 8198657
    Abstract: A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: June 12, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Hoon Lee, Do-Hyun Kim, Chang-Oh Jeong, O-Sung Seo, Xin-Xing Li
  • Publication number: 20110068340
    Abstract: A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode.
    Type: Application
    Filed: January 5, 2010
    Publication date: March 24, 2011
    Inventors: Dong-Hoon Lee, Do-Hyun Kim, Chang-Oh Jeong, O-Sung Seo, Xin-Xing Li