Patents by Inventor Xina Wang

Xina Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate
    Publication number: 20090291523
    Abstract: There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.
    Type: Application
    Filed: April 11, 2006
    Publication date: November 26, 2009
    Applicant: THE INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCE
    Inventors: Xiaolong Du, Xina Wang, Zhaoquan Zeng, Hongtao Yuan, Zengxia Mei, Qikun Xue, Jinfeng Jia